G130N06S2 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1747-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 9 A Pulsed Drain Current (note1) IDM 36 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.6 W Single pulse avalanche energy （note2） EAS 100 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 48 ºC/W DUAL N-Channel Enhancement Mode Power MOSFET
Description
The G130N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 9A l RDS(ON) (at VGS = 10V) < 15mΩ l RDS(ON) (at VGS = 4.5V) < 17mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging SOP-8 DuaG130N06S2 l 4000pcs/ReeG130N06D l Schematic diagram SOP-8 Dual pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1747-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A -- 12.5 15 mΩ VGS = 4.5V, ID = 10A -- 14 17 gFS VGS = 5V, ID = 10A -- 17 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 3021 -- pFOutput Capacitance Coss -- 250 -- Reverse Transfer Capacitance Crss -- 193 -- Total Gate Charge Qg VDD = 30V, ID = 10A, VGS = 10V -- 67 -- nCGate-Source Charge Qgs -- 11 -- Gate-Drain Charge Qgd -- 15 -- Turn-on Delay Time td(on) VDD = 30V, ID = 10A, RG = 3Ω -- 10 -- ns Turn-on Rise Time tr -- 8 -- Turn-off Delay Time td(off) -- 36 -- Turn-off Fall Time tf -- 6 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 9 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 10A, VGS = 0V di/dt=100A/us -- 49 -- nC Reverse Recovery Time Trr -- 34 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1747-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1747-V1.1) SOP-8 Dual Package Information