G130N06M GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1705-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 90 A Pulsed Drain Current (note1) IDM 360 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 85 W Single pulse avalanche energy （note2） EAS 100 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 1.47 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G130N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 90A l RDS(ON) (at VGS = 10V) < 12mΩ l RDS(ON) (at VGS = 4.5V) < 14mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G130N06M TO-263 G130N06 800pcs/Reel Schematic diagram TO-263
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1705-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 2.4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 9 12 mΩ VGS = 4.5V, ID = 20A -- 11 14 gFS VGS = 5V, ID = 20A -- 27 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 2867 -- pFOutput Capacitance Coss -- 163 -- Reverse Transfer Capacitance Crss -- 147 -- Total Gate Charge Qg VDD = 30V, ID = 20A, VGS = 10V -- 36.6 -- nCGate-Source Charge Qgs -- 6.7 -- Gate-Drain Charge Qgd -- 5.8 -- Turn-on Delay Time td(on) VDD = 30V, ID = 20A, RG = 3Ω -- 8 -- ns Turn-on Rise Time tr -- 2 -- Turn-off Delay Time td(off) -- 29 -- Turn-off Fall Time tf -- 4 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 90 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 48 -- nC Reverse Recovery Time Trr -- 38 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1705-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1705-V1.0)