G12N65F GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current ID 12 A Pulsed Drain Current (note1) IDM 48 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 45 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 2.78 ºC/W
Description
This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. General Features l VDS 650V l ID (at VGS = 10V) 12A l RDS(ON) (at VGS = 10V) < 0.78Ω l 100% Avalanche Tested l RoHS Compliant Application l LED power supplies l Cell Phone Charger l Standby Power
Ordering Information
Device Package Marking Packaging G12N65F TO-220F G12N65 50pcs/Tube Schematic diagram TO-220F N-Channel Enhancement Mode Power MOSFET
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.0 3.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 6A -- 0.64 0.78 Ω Forward Transconductance gFS VGS = 5V, ID = 6A -- 7 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 400V, f = 1.0MHz -- 1956 -- pFOutput Capacitance Coss -- 42 -- Reverse Transfer Capacitance Crss -- 6 -- Total Gate Charge Qg VDD = 400V, ID = 6A, VGS = 10V -- 35 -- nCGate-Source Charge Qgs -- 12 -- Gate-Drain Charge Qgd -- 11 -- Turn-on Delay Time td(on) VDD = 400V, ID = 6A, RG = 50Ω -- 94 -- ns Turn-on Rise Time tr -- 35 -- Turn-off Delay Time td(off) -- 159 -- Turn-off Fall Time tf -- 21 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 12 A Body Diode Voltage VSD TJ = 25ºC, ISD = 6A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 6A, VGS = 0V di/dt=100A/us -- 16 -- uC Reverse Recovery Time Trr -- 1530 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1)