G115P06M GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1792-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -98 A Pulsed Drain Current (note1) IDM -392 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 211.9 W Single pulse avalanche energy （note2） EAS 81 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 0.59 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The G115P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -60V l ID (at VGS = -10V) -98A l RDS(ON) (at VGS = -10V) < 11.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G115P06M TO-263 G115P06 800pcs/Reel Schematic diagram TO-263
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1792-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2.0 -2.7 -4.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -15A -- 9.0 11.5 mΩ gFS VDS = -5V,ID = -15A -- 19 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 9430 -- pFOutput Capacitance Coss -- 551 -- Reverse Transfer Capacitance Crss -- 475 -- Total Gate Charge Qg VDD = -30V, ID = -15A, VGS = -10V -- 125 -- nCGate-Source Charge Qgs -- 27 -- Gate-Drain Charge Qgd -- 32 -- Turn-on Delay Time td(on) VDD = -30V, ID = -15A, RG = 3Ω -- 30 -- ns Turn-on Rise Time tr -- 33 -- Turn-off Delay Time td(off) -- 92 -- Turn-off Fall Time tf -- 58 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -98 A Body Diode Voltage VSD TJ = 25ºC, ISD = -15A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -15A, VGS = 0V di/dt=-100A/us -- 118 -- nC Reverse Recovery Time Trr -- 82 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1792-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1792-V1.0)