G100P04KA GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2070.83-SP) l VDS -40V l ID (at VGS = -10V) -50A l RDS(ON) (at VGS = -10V) < 10mΩ l RDS(ON) (at VGS = -4.5V) < 15m
Description
The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features Ω l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging TO-25G100P04KA 2 2500pcs/ReeG100P04 l Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -40 V Continuous Drain Current TC = 25ºC ID -50 A TC = 100ºC -36 Pulsed Drain Current (note1) IDM -200 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 96 W Single pulse avalanche energy （note2） EAS 132 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 175 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.56 ºC/W Schematic diagram TO-252 P-Channel Enhancement Mode Power MOSFET
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2070.83-SP) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = - 20A -- 8.5 10 mΩ gFS VDS = -5V,ID = -20A -- 33 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1.0MHz -- 2520 -- pFOutput Capacitance Coss -- 333 -- Reverse Transfer Capacitance Crss -- 280 -- Total Gate Charge Qg VDD = -20V, ID = -22A, VGS = -10V -- 42 -- nCGate-Source Charge Qgs -- 7 -- Gate-Drain Charge Qgd -- 10 -- Turn-on Delay Time td(on) VDD = -20V, ID = -22A, RG = 3Ω -- 10 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 38 -- Turn-off Fall Time tf -- 24 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -50 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -12A, VGS = 0V di/dt=-100A/us -- 42 -- nC Reverse Recovery Time Trr -- 40 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 361mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG G100P04KA
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2070.83-SP) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2070.83-SP) Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.2 2.3 2.4 A1 0 0.2 A2 0.97 1.07 1.17 b 0.68 0.78 0.9 b3 5.2 5.33 5.5 c 0.43 0.53 0.63 D 5.98 6.1 6.22 D1 5.30REF E 6.4 6.6 6.8 E1 4.63 e 2.286BSC H 9.4 10.1 10.5 L 1.38 1.5 1.75 L1 2.90REF L2 0.51BSC L3 0.88 1.28 L4 0.5 1 L5 1.65 1.8 1.95 θ 0° 8°