G100N03D5 GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 TFX:0755-29961466

Description

The G100N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 30V l ID (at VGS = 10V) 100A l RDS(ON) (at VGS = 10V) < 3.5mΩ l RDS(ON) (at VGS = 4.5V) < 4.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging G100N03D5 DFN5*6-8L G100N03 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Continuous Drain Current ID 100 A Pulsed Drain Current (note1) IDM 285 A Gate-Source Voltage VGS ±20 V Single Pulse Avalanche Energy (note2) EAS 250 mJ Power Dissipation PD 50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJA 50 ºC/W Maximum Junction-to-Case RthJC 2.5 ºC/W N-Channel Enhancement Mode Power MOSFET DFN5X6-8L Schematic Diagram Marking and pin assignment

www.gofordsemi.com TEL：0755-29961263 TFX:0755-29961466 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 2.5 3.5 mΩ Forward Transconductance gFS VDS = 5V,ID = 20A -- 64 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 5595 -- pFOutput Capacitance Coss -- 765 -- Reverse Transfer Capacitance Crss -- 659 -- Total Gate Charge Qg VDD = 15V, ID = 20A, VGS = 10V -- 38 -- nCGate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 13 -- Turn-on Delay Time td(on) VDD = 15V, ID = 50A, RG = 2.5Ω -- 26 -- ns Turn-on Rise Time tr -- 24 -- Turn-off Delay Time td(off) -- 91 -- Turn-off Fall Time tf -- 39 -- Drain-Source Body Diode Characteristics Continuous Source Current IS TC = 25ºC -- -- 100 A Body Diode Voltage VSD TJ = 25ºC, ISD = 50A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IS = 20A, VGS = 0V di/dt=500A/us -- 25 -- nC Reverse Recovery Time trr -- 13 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 20A, VDD = 40V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG

www.gofordsemi.com TEL：0755-29961263 TFX:0755-29961466 DFN5*6-8L Package Information