G100C04D52 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1642) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit Drain-Source Voltage VDS 40 -40 V Continuous Drain Current ID 40 -24 A Pulsed Drain Current (note1) IDM 200 -96 A Gate-Source Voltage VGS ±20 ±20 V Power Dissipation PD 65 50 W Single pulse avalanche energy （note2） EAS 81 81 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 -55 To 150 ºC Thermal Resistance Parameter Symbol NMOS PMOS Unit Thermal Resistance, Junction-to-Ambient RthJA 40 50 ºC/W Maximum Junction-to-Case RthJC 1.9 2.5 ºC/W N and P Channel Enhancement Mode Power MOSFET
Description
The G100C04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l NMOS l VDS 40V l ID (at VGS = 10V) 40A l RDS(ON) (at VGS = 10V) < 9mΩ l RDS(ON) (at VGS = 4.5V) < 12mΩ l 100% Avalanche Tested l RoHS Compliant l PMOS l VDS -40V l ID (at VGS = -10V) -24A l RDS(ON) (at VGS = -10V) < 16mΩ l RDS(ON) (at VGS = -4.5V) < 20mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G100C04D52 DFN5*6-8L Dual G100C04 5000pcs/Reel Schematic diagram DFN5X6-8L Dual pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1642) NMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.8 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 7 9 mΩ VGS = 4.5V, ID = 20A -- 9 12 gFS VGS = 5V, ID = 12A -- 22 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1.0MHz -- 2213 -- pFOutput Capacitance Coss -- 173 -- Reverse Transfer Capacitance Crss -- 156 -- Total Gate Charge Qg VDD = 20V, ID = 30A, VGS = 10V -- 29 -- nCGate-Source Charge Qgs -- 4.5 -- Gate-Drain Charge Qgd -- 6.5 -- Turn-on Delay Time td(on) VDD = 20V, ID = 30A, RG = 3Ω -- 17 -- ns Turn-on Rise Time tr -- 6.5 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 17 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 40 A Body Diode Voltage VSD TJ = 25ºC, ISD =30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 30A, VGS = 0V di/dt=100A/us -- 26 -- nC Reverse Recovery Time Trr -- 29 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1642) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1642) PMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.6 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -10A -- 13 16 mΩ gFS VDS = -5V,ID = -12A -- 22 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1.0MHz -- 2451 -- pFOutput Capacitance Coss -- 224 -- Reverse Transfer Capacitance Crss -- 213 -- Total Gate Charge Qg VDD = -20V, ID = -20A, VGS = -10V -- 45 -- nCGate-Source Charge Qgs -- 6.1 -- Gate-Drain Charge Qgd -- 10.1 -- Turn-on Delay Time td(on) VDD = -20V, ID = -10A, RG = 3Ω -- 9 -- ns Turn-on Rise Time tr -- 7 -- Turn-off Delay Time td(off) -- 78 -- Turn-off Fall Time tf -- 39 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -24 A Body Diode Voltage VSD TJ = 25ºC, ISD = -10A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -20A, VGS = 0V di/dt=-100A/us -- 26 -- nC Reverse Recovery Time Trr -- 29 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1642) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1642) DFN5X6-8L Dual Package Information