G1008B GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1852-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 8 A Pulsed Drain Current (note1) IDM 32 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 3 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 41.7 ºC/W DUAL N-Channel Enhancement Mode Power MOSFET
Description
The G1008B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 8A l RDS(ON) (at VGS = 10V) < 120mΩ l RDS(ON) (at VGS = 4.5V) < 130mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G1008B SOP-8 Dual G1008B 4000pcs/Reel SOP-8 pin assignment Schematic diagram
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1852-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.8 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 2A -- 99 120 mΩ VGS = 4.5V, ID = 2A -- 106 130 gFS VGS = 5V, ID = 2A -- 3.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 814 -- pFOutput Capacitance Coss -- 29 -- Reverse Transfer Capacitance Crss -- 23 -- Total Gate Charge Qg VDD = 50V, ID = 2A, VGS = 10V -- 25 -- nCGate-Source Charge Qgs -- 3.1 -- Gate-Drain Charge Qgd -- 5.7 -- Turn-on Delay Time td(on) VDD = 50V, ID = 2A, RG = 2.5Ω -- 13 -- ns Turn-on Rise Time tr -- 8.5 -- Turn-off Delay Time td(off) -- 37 -- Turn-off Fall Time tf -- 10.4 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 8 A Body Diode Voltage VSD TJ = 25ºC, ISD = 2A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 2A, VGS = 0V di/dt=100A/us -- 31 -- nC Reverse Recovery Time Trr -- 29 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1852-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1852-V1.1) SOP-8 Dual Package Information Symbol Dimensions in Millimeters MIN. NOM. MAX. A 5.800 6.000 6.200 A1 4.800 4.900 5.000 B 1.270BSC B1 0.35^8x 0.40^8x 0.45^8x C 3.780 3.880 3.980 C1 -- 0.203 0.253 D 0.050 0.150 0.250 D1 1.350 1.450 1.550 D2 1.500 1.600 1.700 D2 1.500 1.600 1.700 E 1.060REF E1 0.400 0.700 0.100 F 0.250BSC F1 2° 4° 6°