G1007 GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
Features
- Ultra Low On-Resistance
- High UIS and UIS 100% Test Application
- Power switching application
- LED backlighting
Table 1. Absolute Maximum Ratings (TA=25℃)
Ordering Information
(QD) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Table 2. Thermal Characteristic Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： GOFORD G1007 (QD) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) ID-Drain Current (A) ID-Drain Current (A) R DS(ON) On- Resistance (m Ω Figure1. On-Region Characteristics Figure 2: Transfer Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) Figure3. On-Resistance vs. Drain Current and Gate Voltage Figure4. On-Resistance vs. Junction Temperature Normalized On-Resistance ID- Drain Current (A) Temperature (°C) Figure5. On-Resistance vs. Gate-Source Voltage Figure6. Body-Diode Characteristics R DS(ON) On- Resistance (m Ω VGS Gate-Source Voltage (V) Is-Reverse Drain Current (A) VDS Drain- Source Voltage (V) GOFORD G1007 (QD) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Figure 9. Maximum Forward Biased Safe
(QD) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466