G1006LE GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1466-V1.2) Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 83.3 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G1006LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 3A l RDS(ON) (at VGS = 10V) < 120mΩ l RDS(ON) (at VGS = 4.5V) < 130mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM) : 5KV Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G1006LE SOT-23-3L G1006 3000pcs/Reel Schematic diagram SOT-23-3L Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 3 A Pulsed Drain Current (note1) IDM 12 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.5 W Single pulse avalanche energy （note2） EAS 7 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1466-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±30 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3A -- 96 120 mΩ VGS = 4.5V, ID = 3A -- 105 130 gFS VGS = 5V, ID = 3A -- 5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 532 -- pFOutput Capacitance Coss -- 30 -- Reverse Transfer Capacitance Crss -- 22 -- Total Gate Charge Qg VDD = 50V, ID = 3A, VGS = 10V -- 17 -- nCGate-Source Charge Qgs -- 2 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 50V, ID = 3A, RG = 3Ω -- 5 -- ns Turn-on Rise Time tr -- 4 -- Turn-off Delay Time td(off) -- 17 -- Turn-off Fall Time tf -- 4 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 3A, VGS = 0V di/dt=100A/us -- 12 -- nC Reverse Recovery Time Trr -- 17 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 20mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1466-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1466-V1.2)