G1005 GOFORD | Alldatasheet
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D G S Schematic diagram TO-92 G1005 GOFORD V D S S R D S O N 123 A 10V @ (Typ) Ωm100V I D GeneralDescription The G1005 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a loadswitchorinPWMapplications.
- HighPowerandcurrenthandingcapability
- SurfaceMountPackage P W M a p p l i c a t i o n s L o a d s w i t c h P o w e r m a n a g e m e n t Table1. AbsoluteMaximumRatings(TA=25℃) Symbol Parameter Value Unit VDS Drain-SourceVoltage(VGS=0V） 100 V VGS Gate-SourceVoltage(VDS=0V) ±20 V ID DrainCurrent-Continuous(Tc=25℃) 5 A DrainCurrent-Continuous(Tc=100℃) 3.1 A IDM (pluse) DrainCurrent-Continuous@Current-Pulsed(Note1) 20 A PD MaximumPowerDissipation 9.3 W TJ,TSTG OperatingJunctionandStorageTemperatureRange -55To150 ℃ Notes1.RepetitiveRating: Pulse width limited bymaximum junction temperature Table2. ThermalCharacteristic Symbol Parameter Typ Value Unit RJA ThermalResistance,Junction-to-Ambient - 13.5 ℃/W RoHS Compliant
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Table3. ElectricalCharacteristics(TA=25℃unlessotherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/OffStates BVDSS Drain-SourceBreakdownVoltage VGS=0VID=250μA 100 V IDSS ZeroGateVoltageDrainCurrent VDS=100V,VGS=0V 0.9 μA IGSS Gate-BodyLeakageCurrent VGS=±20V,VDS=0V ±100 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=250μA 1.3 1.9 2.5 V RDS(ON) Drain-SourceOn-StateResistance VGS=10V,ID= 3A 123 180 mΩ DynamicCharacteristics Ciss InputCapacitance VDS=25V,VGS=0V, f=1.0MHz 690 pF Coss OutputCapacitance 120 pF Crss ReverseTransferCapacitance 90 pF SwitchingTimes td(on) Turn-onDelayTime VDD=15V,ID=1A,RL=15Ω VGS=10V,RG=2.5Ω 11 nS tr Turn-onRiseTime 7.4 nS td(off) Turn-OffDelayTime 35 nS tf Turn-OffFallTime 9.1 nS Qg TotalGateCharge VDS=15V,ID=5A VGS=10V 15.5 nC Qgs Gate-SourceCharge 3.2 nC Qgd Gate-DrainCharge 4.7 nC Source-DrainDiodeCharacteristics ISD Source-DrainCurrent(BodyDiode) 5 A VSD ForwardonVoltage(Note1) VGS=0V,IS=3A 1 V Notes1. Repetitive Rating:Pulse width limited bymaximum junction temperature. G1005 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
SwitchTimeTestCircuitandSwitching Waveforms： TYPICALELECTRICALANDTHERMAL CHARACTERISTICS (Curves) Figure1.OutputCharacteristics Figure2.TransferCharacteristics VDS Drain-SourceVoltage(V) VDS Drain-SourceVoltage(V) Figure3. BVDSSvsJunction Temperature Figure4. IDvsJunctionTemperature ID-Drain Current(A) ID-DrainCurrent(A) ID-DrainCurrent (A) G1005 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Figure5.VGS(th)vsJunction Temperature Figure6. RdsonVsJunctionTemperature Temperature（℃） Temperature（℃） Figure9.Source-DrainDiodeForward Figure10.SafeOperation Area VDS Drain-SourceVoltage(V) QgGateCharge (nC) Tc=25℃ Figure7.GateCharge Figure8.CapacitancevsVds CCapacitance(pF)ID-Drain Current(A) IS-Source Current(A) VSD Source-DrainVoltage(V) VDS Drain-SourceVoltage(V) VGS (Volts) G1005 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Figure11.Normalized MaximumTransient ThermalImpedance G1005 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
A 4.59 4.60 - B 4.58 4.60 4.62 C 3.50 3.55 3.60 D 2.50 2.55 2.60 E - 1.25 1.30 G 1.24 1.27 1.30 H 14.28 14.30 14.32 J 0.38 All Dimensions in mm GOFORD G1005 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466