G1003B GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1999-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 3 A Pulsed Drain Current (note1) IDM 12 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 83.3 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G1003B uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 3A l RDS(ON) (at VGS = 10V) < 130mΩ l RDS(ON) (at VGS = 4.5V) < 145mΩ l RDS(ON) (at VGS = 3V) < 150mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G1003B SOT-23-3 G1003B 3000pcs/Reel Schematic diagram SOT-23-3
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1999-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.2 1.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 106 130 mΩVGS = 4.5V, ID = 1A -- 110 145 VGS = 3V, ID = 1A -- 118 150 gFS VGS = 5V, ID = 1A -- 5.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 885 -- pFOutput Capacitance Coss -- 26 -- Reverse Transfer Capacitance Crss -- 21 -- Total Gate Charge Qg VDD = 50V, ID = 1A, VGS = 10V -- 30 -- nCGate-Source Charge Qgs -- 6 -- Gate-Drain Charge Qgd -- 9 -- Turn-on Delay Time td(on) VDD = 50V, ID = 1A, RG = 2.5Ω -- 2.2 -- ns Turn-on Rise Time tr -- 3.9 -- Turn-off Delay Time td(off) -- 5.8 -- Turn-off Fall Time tf -- 1.9 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 1A, VGS = 0V di/dt=100A/us -- 20 -- nC Reverse Recovery Time Trr -- 29 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1999-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1999-V1.0)