G090P02S GOFORD | Alldatasheet

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Description

The G090P02S uses advanced trench technology toprovide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features DS ⚫ ID (at VGS = -10V) -20V -11A ⚫ RDS(ON) (at VGS = -4.5V) < 9mΩ ⚫ RDS(ON) (at VGS = -2.5V) < 12.5mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging SOP-G090P02S 8 G090P02 4000pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Continuous Drain Current ID -11 A Pulsed Drain Current (note1) IDM -44 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 3.3 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 38 ºC/W Schematic diagram Marking and pin assignment SOP-8 P-Channel Trench MOSFET

FAX:0755-www.gofordsemi.com TEL：0755-29961263 29961466 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µ A -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 25ºC -- -- -1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µ A -0.4 -0.65 -1.1 V Drain-Source On-Resistance RDS(on) VGS = -4.5V, ID = -1A -- m 7.5 9.0 Ω Forward Transconductance gFS VDS=-5V,ID=-1A -- 90 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1.0MHz -- 2225 -- pFOutput Capacitance Coss -- 412 -- Reverse Transfer Capacitance Crss -- 281 -- Total Gate Charge Qg VDD = -10V, ID = -1A, VGS = -10V -- 47 -- nCGate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 10 -- Turn-on Delay Time td(on) VDD = -10V, ID = -1A, RG = 3Ω -- 3.5 -- ns Turn-on Rise Time tr -- 6 -- Turn-off Delay Time td(off) -- 67 -- Turn-off Fall Time tf -- 22 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -11 A Pulsed Diode Forward Current ISM -- -- -44 Body Diode Voltage VSD TJ = 25ºC, ISD = -1A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG

FAX:0755-www.gofordsemi.com TEL：0755-29961263 29961466 EAS Test Circuit Switch Time Test Circuit

FAX:0755-www.gofordsemi.com TEL：0755-29961263 29961466