G085C03D32 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1942-V1.3) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit Drain-Source Voltage VDS 30 -30 V Continuous Drain Current ID 28 -12 A Pulsed Drain Current (note1) IDM 112 -48 A Gate-Source Voltage VGS ±20 ±20 V Power Dissipation PD 13 30 W Single pulse avalanche energy （note2） EAS 30 36 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 -55 To 150 ºC Thermal Resistance Parameter Symbol NMOS PMOS Unit Thermal Resistance, Junction-to-Ambient RthJA 55 55 ºC/W Maximum Junction-to-Case RthJC 9.6 4.2 ºC/W N and P Channel Enhancement Mode Power MOSFET
Description
The G085C03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l NMOS l VDS 30V l ID (at VGS = 10V) 28A l RDS(ON) (at VGS = 10V) < 11mΩ l RDS(ON) (at VGS = 4.5V) < 15mΩ l 100% Avalanche Tested l RoHS Compliant l PMOS l VDS -30V l ID (at VGS = -10V) -12A l RDS(ON) (at VGS = -10V) < 23mΩ l RDS(ON) (at VGS = -4.5V) < 31mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G085C03D32 DFN3X3-8L Dual G085C03D 5000pcs/Reel Schematic diagram DFN3X3-8L Dual pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1942-V1.3) NMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.5 2.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A -- 9 11 mΩ VGS = 4.5V, ID = 8A -- 12 15 gFS VGS = 5V, ID = 5A -- 35 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1.0MHz -- 1085 -- pFOutput Capacitance Coss -- 168 -- Reverse Transfer Capacitance Crss -- 151 -- Total Gate Charge Qg VDD = 15V, ID = 10A, VGS = 10V -- 18 -- nCGate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) VDD = 15V, ID = 10A, RG = 3Ω -- 6 -- ns Turn-on Rise Time tr -- 13 -- Turn-off Delay Time td(off) -- 20 -- Turn-off Fall Time tf -- 7 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 28 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 10A, VGS = 0V di/dt=100A/us -- 11 -- nC Reverse Recovery Time Trr -- 20 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1942-V1.3) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1942-V1.3) PMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.5 -2.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 19 23 mΩ gFS VDS = -5V,ID = -6A -- 27 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 1352 -- pFOutput Capacitance Coss -- 176 -- Reverse Transfer Capacitance Crss -- 169 -- Total Gate Charge Qg VDD = -15V, ID = -6A, VGS = -10V -- 25 -- nCGate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 6 -- Turn-on Delay Time td(on) VDD = -15V, ID = -6A, RG = 3Ω -- 9 -- ns Turn-on Rise Time tr -- 8 -- Turn-off Delay Time td(off) -- 26 -- Turn-off Fall Time tf -- 8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -12 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -6A, VGS = 0V di/dt=-500A/us -- 25 -- nC Reverse Recovery Time Trr -- 12 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1942-V1.3) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1942-V1.3) DFN3*3-8L Dual Package Information