G070N06TH GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2034-SP) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current TC=25°C ID 110 A TC=100°C 75 Pulsed Drain Current (note1) IDM 440 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 160 W Single pulse avalanche energy （note2） EAS 702 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 0.78 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The G070N06TH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 110A l RDS(ON) (at VGS = 10V) < 6.4mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G070N06TH TO-220 G070N06H 50pcs/Tube Schematic diagram TO-220 PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2034-SP) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.0 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 5.1 6.4 mΩ gFS VGS = 5V, ID = 20A -- 20 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 6512 -- pFOutput Capacitance Coss -- 360 -- Reverse Transfer Capacitance Crss -- 310 -- Total Gate Charge Qg VDD = 30V, ID = 20A, VGS = 10V -- 74 -- nCGate-Source Charge Qgs -- 13 -- Gate-Drain Charge Qgd -- 33 -- Turn-on Delay Time td(on) VDD = 30V, ID = 20A, RG = 6Ω -- 22 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 54 -- Turn-off Fall Time tf -- 23 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 110 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 40 -- nC Reverse Recovery Time Trr -- 33 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2034-SP) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2034-SP) PRELIMINARY