G06NP06DS2 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1901-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit Drain-Source Voltage VDS 60 -60 V Continuous Drain Current ID 3 -6 A Pulsed Drain Current (note1) IDM 12 -24 A Gate-Source Voltage VGS ±20 ±20 V Power Dissipation PD 1.7 2.8 W Single pulse avalanche energy （note2） EAS 6 25 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 -55 To 150 ºC Thermal Resistance Parameter Symbol NMOS PMOS Unit Thermal Resistance, Junction-to-Ambient RthJA 73.5 45 ºC/W N and P Channel Enhancement Mode Power MOSFET
Description
The G06NP06DS2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l NMOS l VDS 60V l ID (at VGS = 10V) 3A l RDS(ON) (at VGS = 10V) < 80mΩ l RDS(ON) (at VGS = 4.5V) < 85mΩ l 100% Avalanche Tested l RoHS Compliant l PMOS l VDS -60V l ID (at VGS = -10V) -6A l RDS(ON) (at VGS = -10V) < 75mΩ l RDS(ON) (at VGS = -4.5V) < 92mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G06NP06DS2 SOP-8 Dual G06NP06D 4000pcs/Reel Schematic diagram SOP-8 Dual pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1901-V1.0) NMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.7 0.9 1.2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 2A -- 63 80 mΩ VGS = 4.5V, ID = 1A -- 66 85 gFS VGS = 5V, ID = 2A -- 5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 454 -- pFOutput Capacitance Coss -- 31 -- Reverse Transfer Capacitance Crss -- 25 -- Total Gate Charge Qg VDD = 30V, ID = 2A, VGS = 10V -- 6 -- nCGate-Source Charge Qgs -- 1 -- Gate-Drain Charge Qgd -- 1.3 -- Turn-on Delay Time td(on) VDD = 30V, ID = 2A, RG = 1Ω -- 15 -- ns Turn-on Rise Time tr -- 6 -- Turn-off Delay Time td(off) -- 15 -- Turn-off Fall Time tf -- 10 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 3 A Body Diode Voltage VSD TJ = 25ºC, ISD =2A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 2A, VGS = 0V di/dt=500A/us -- 24 -- nC Reverse Recovery Time Trr -- 12 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 16mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1901-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1901-V1.0) PMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.7 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -4A -- 60 75 mΩ gFS VDS = -5V,ID = -4A -- 7.4 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 1476 -- pFOutput Capacitance Coss -- 71 -- Reverse Transfer Capacitance Crss -- 65 -- Total Gate Charge Qg VDD = -30V, ID = -4A, VGS = -10V -- 29 -- nCGate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 6 -- Turn-on Delay Time td(on) VDD = -30V, ID = -4A, RG = 3Ω -- 10 -- ns Turn-on Rise Time tr -- 5 -- Turn-off Delay Time td(off) -- 40 -- Turn-off Fall Time tf -- 9 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -6 A Body Diode Voltage VSD TJ = 25ºC, ISD = -4A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -4A, VGS = 0V di/dt=-100A/us -- 39 -- nC Reverse Recovery Time Trr -- 31 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 64mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1901-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1901-V1.0) SOP-8 Dual Package Information