G06N02H GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 TFX:0755-29961466
Description
The G06N02H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS 20V ⚫ ID (at VGS = 10V) 6A ⚫ RDS(ON) (at VGS = 4.5V) < 14.3mΩ ⚫ RDS(ON) (at VGS = 2.5V) < 17.1mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G06N02H SOT-223 G06N02 2500pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 6 A Pulsed Drain Current (note1) IDM 24 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.8 W Single pulse avalanche energy （note3） EAS 54 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 80 ºC/W Schematic diagram N-Channel Enhancement Mode Power MOSFET SOT-223
www.gofordsemi.com TEL：0755- TFX:0755-29961466 Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=20V,VG=10V,L=0.5mH,Rg=25Ω Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 0.5 0.7 0.9 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 3A -- 11.4 14.3 mΩ VGS = 2.5V, ID = 3A -- 13.5 17.1 Forward Transconductance gFS VDS=5V,ID=6A -- 50 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 1140 -- pFOutput Capacitance Coss -- 165 -- Reverse Transfer Capacitance Crss -- 110 -- Total Gate Charge Qg VDD = 4.5V, ID = 6A, VGS = 10V -- 12.5 -- nCGate-Source Charge Qgs -- 1.2 -- Gate-Drain Charge Qgd -- 2.7 -- Turn-on Delay Time td(on) VDD = 4.5V, ID = 3A, RG = 3Ω -- 2.7 -- ns Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 37 -- Turn-off Fall Time tf -- 7 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 6 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V G06N02H 29961263
www.gofordsemi.com TEL：0755- TFX:0755-29961466 Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit G06N02H 29961263
www.gofordsemi.com TEL：0755- TFX:0755-29961466 G06N02H 29961263