G05N06S2 GOFORD | Alldatasheet

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www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1429) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 5 A Pulsed Drain Current (note1) IDM 20 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40.3 ºC/W Dual N-Channel Enhancement Mode Power MOSFET

Description

The G05N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Ordering Informatio l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant Application l Power switch l 60V < 35mΩ l VDS < 40mΩ DC/DC converters n Device Package Marking Packaging G05N06S2 05N0SOP-8 Dual 6 4000pcs/Tube Schematic diagram pin assignmen SOP-8 Dual t

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1429) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.6 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 28 35 mΩ VGS = 4.5V, ID = 5A -- 31 40 gFS VGS = 5V, ID = 5A -- 16 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 1374 -- pFOutput Capacitance Coss -- 56 -- Reverse Transfer Capacitance Crss -- 50 -- Total Gate Charge Qg VDD = 30V, ID = 5A, VGS = 10V -- 26 -- nCGate-Source Charge Qgs -- 5.4 -- Gate-Drain Charge Qgd -- 6.5 -- Turn-on Delay Time td(on) VDD = 30V, ID = 5A, RG = 3Ω -- 20 -- ns Turn-on Rise Time tr -- 10 -- Turn-off Delay Time td(off) -- 29 -- Turn-off Fall Time tf -- 21 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 5 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 5A, VGS = 0V di/dt=500A/us -- 11.7 -- nC Reverse Recovery Time Trr -- 23 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1429) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1429) SOP-8 Dual Package Information