G02P06 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1539) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -1.6 A Pulsed Drain Current (note1) IDM -6.4 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 83 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The G02P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -60V l ID (at VGS = -10V) -1.6A l RDS(ON) (at VGS = -10V) < 190mΩ l RDS(ON) (at VGS = -4.5V) < 230mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging SOT-2G02P06 3 G02P06 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1539) Specifications TJ = 25ºC, unless otherwise noted30 Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -1A -- 150 190 mΩ VGS = -4.5V, ID = -1A -- 180 230 gFS VDS = -5V,ID = -1A -- 3.6 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 566 -- pFOutput Capacitance Coss -- 26 -- Reverse Transfer Capacitance Crss -- 23 -- Total Gate Charge Qg VDD = -30V, ID = -1A, VGS = -10V -- 11.3 -- nCGate-Source Charge Qgs -- 2.7 -- Gate-Drain Charge Qgd -- 1.6 -- Turn-on Delay Time td(on) VDD = -30V, ID = -1A, RG = 3Ω -- 40 -- ns Turn-on Rise Time tr -- 35 -- Turn-off Delay Time td(off) -- 15 -- Turn-off Fall Time tf -- 10 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -1.6 A Body Diode Voltage VSD TJ = 25ºC, ISD = -1A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -1A, VGS = 0V di/dt=-100A/us -- 31 -- nC Reverse Recovery Time Trr -- 25 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1539) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1539)