G01N20LE GOFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1936-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 200 V Continuous Drain Current ID 1.7 A Pulsed Drain Current (note1) IDM 6.8 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 83 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The G01N20LE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 200V l ID (at VGS = 10V) 1.7A l RDS(ON) (at VGS = 10V) < 0.7Ω l RDS(ON) (at VGS = 4.5V) < 0.72Ω l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)：2KV Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G01N20LE SOT-23-3L G01N20 3000pcs/Reel Schematic diagram SOT-23-3L

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1936-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 200 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±30 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.9 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 0.58 0.70 Ω VGS = 4.5V, ID = 1A -- 0.59 0.72 gFS VGS = 5V, ID = 1A -- 8 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz -- 515 -- pFOutput Capacitance Coss -- 16 -- Reverse Transfer Capacitance Crss -- 11 -- Total Gate Charge Qg VDD = 100V, ID = 1A, VGS = 10V -- 12 -- nCGate-Source Charge Qgs -- 2.5 -- Gate-Drain Charge Qgd -- 3.8 -- Turn-on Delay Time td(on) VDD = 100V, ID = 1A, RG = 2.5Ω -- 10 -- ns Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 15 -- Turn-off Fall Time tf -- 15 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 1.7 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 1A, VGS = 0V di/dt=100A/us -- 663 -- nC Reverse Recovery Time Trr -- 201 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1936-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1936-V1.0)