FZ06 VINCOTECH | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
- Trench Fieldstop IGBT3 technology
- 2-clip housing in 12mm and 17mm height
- Compact and low inductance design
- AlN substrate for improved performance
- Motor Drive
- UPS
- FZ062PA075SA01
- F0062PA075SA01 Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Inverter Transistor Th=80°C 91 Tc=80°C 110 Th=80°C 196 Tc=80°C 297 tSC Tj≤150°C 6 μs VCC VGE=15V 360 V Inverter Diode Th=80°C 80 Tc=80°C 90 Th=80°C 130 Tc=80°C 197 Tj=Tjmax tp limited by Tjmax AIF 160 Tj=Tjmax DC forward current A W 225 A V VRRM Maximum Junction Temperature Power dissipation per IGBT VGE Tjmax Ptot Short circuit ratings Peak Repetitive Reverse Voltage Gate-emitter peak voltage 600 Types Maximum Ratings Condition Features flow0 housing Target Applications Schematic IFRM Tjmax Repetitive peak forward current Power dissipation per Diode Ptot 175 V600 Collector-emitter break down voltage Repetitive peak collector current DC collector current VCE ICpulse IC ±20 W A V 175Maximum Junction Temperature °C T j=25°C Tj=Tjmax Tj=Tjmax tp limited by Tjmax
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Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Maximum Ratings Condition Thermal Properties Insulation Properties Vis t=2s DC voltage 4000 V min 12,7 mm min 12,7 mmClearance Insulation voltage Creepage distance TopOperation temperature under switching condition °C Storage temperature Tstg -40…+125 °C -40…+(Tjmax - 25)
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VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1 1,63 2,1 Tj=150°C 1,87 Tj=25°C 0,03 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 123 Tj=150°C 132 Tj=25°C 15 Tj=150°C 21 Tj=25°C 169 Tj=150°C 199 Tj=25°C 87 Tj=150°C 105 Tj=25°C 0,52 Tj=150°C 0,89 Tj=25°C 1,68 Tj=150°C 2,26 Thermal resi stance chip to heatsink per chip RthJH 0,48 Thermal resistance chip to case per chip RthJC Tj=25°C 1 1,64 2,1 Tj=150°C 1,59 Tj=25°C 93,621 Tj=150°C 110,6 Tj=25°C 100,9 Tj=150°C 128,2 Tj=25°C 3,24 Tj=150°C 6,5 di(rec)max Tj=25°C 6615 /dt Tj=150°C 4412 Tj=25°C 0,75 Tj=150°C 1,57 Thermal resi stance chip to heatsink per chip RthJH 0,73 Thermal resistance chip to case per chip RthJC K/W Thermal foil thickness=76um Kunze foil KU- ALF5 K/W Thermal foil thi ckness=76um Kunze foil KU- ALF5 V pF mWs Ω ns ns mA 465 4700 300 145 Rgon=2 Ω 0,0008 300 300 Gate -emitter leakage current Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage Fall time Turn-off delay time Turn-on delay time Rise time Gate charge Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Reverse recovered charge Inverter Diode Diode forward voltage VCE=VGE ±15 f=1MHz Rgoff=2 Ω ±15Rgon=2 Ω A μC mWs A/μs Characteristic Values ValueConditions Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Turn-on energy loss per pulse Collector-emitter cut-off current incl. Diode Erec Coss Rgint tf Eon Eoff IRRM td(on) Crss IGES VGE(th) VCE(sat) ICES Cies Qrr trr VF Peak reverse recovery current Reverse transfer capacitance QGate tr td(off) ±15 600 V nC V nA Tj=25°C Tj=25°C
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Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT Typical output characteristics IC = f(VCE) IC = f(VCE) At At tp = 350 μs tp = 350 μs Tj = 25 °C Tj = 150 °C VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V Figure 3 Output inverter IGBT Figure 4 Output inverter FRED Typical transfer characteristics Typical diode forward current as IC = f(VGE) a function of forward voltage IF = f(VF) At At tp = 350 μs tp = 350 μs VCE = 10 V Output Inverter Typical output characteristics 120 160 200 012345 V CE (V) IC (A) 02468 1 0 1 2 V GE (V) IC (A) Tj = 25°C Tj = Tjmax-25°C 120 160 200 00 , 511 , 522 , 53 V F (V) IF (A) Tj = 25°C Tj = Tjmax-25°C 120 160 200 012345 V CE (V) IC (A)
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Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/150 °C Tj = 25/150 °C VCE = 300 V VCE = 300 V VGE = ±15 V VGE = ±15 V Rgon = 2 Ω IC = 75 A Rgoff = 2 Ω Figure 7 Output inverter IGBT Figure 8 Output inverter IGBT Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(IC)E rec = f(RG) With an inductive load at With an inductive load at Tj = 25/150 °C Tj = 25/150 °C VCE = 300 V VCE = 300 V VGE = ±15 V VGE = ±15 V Rgon = 2 Ω IC = 75 A Output Inverter Eon High T Eoff High T Eon Low T Eoff Low T 0,8 1,6 2,4 3,2 0 30 60 90 120 150 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0,8 1,6 2,4 3,2 02468 1 0 R G ( Ω ) E (mWs) Tj = Tjmax -25°C Erec Tj = 25°C Erec 0,5 1,5 2,5 0 30 60 90 120 150I C (A) E (mWs) Tj = Tjmax -25°C Erec Tj = 25°C Erec 0,5 1,5 2,5 02468 1 0R G ( Ω ) E (mWs)
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Figure 9 Output inverter IGBT Figure 10 Output inverter IGBT Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 150 °C Tj = 150 °C VCE = 300 V VCE = 300 V VGE = ±15 V VGE = ±15 V Rgon = 2 Ω IC = 75 A Rgoff = 2 Ω Figure 11 Output inverter FRED Figure 12 Output inverter FRED Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of IGBT turn on gate resistor trr = f(IC) trr = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 300 V VR = 300 V VGE = ±15 V IF = 75 A Rgon = 2 Ω VGE = ±15 V Output Inverter tdoff tf tdon tr 0,001 0,01 0,1 0 30 60 90 120 150I C (A) t ( μs) Tj = Tjmax -25°C trr Tj = 25°C trr 0,05 0,1 0,15 0,2 0,25 02468 1 0R go n ( Ω ) t rr( μs) tdoff tf tdon tr 0,001 0,01 0,1 02468 1 0 R G ( Ω ) t ( μs) Tj = Tjmax -25°C trr trr Tj = 25°C 0,02 0,04 0,06 0,08 0,1 0,12 0,14 0 30 60 90 120 150I C (A) t rr( μs)
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Figure 13 Output inverter FRED Figure 14 Output inverter FRED Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of IGBT turn on gate resistor Qrr = f(IC)Q rr = f(Rgon) At At At Tj = 25/150 °C Tj = 25/150 °C VCE = 300 V VR = 300 V VGE = ±15 V IF = 75 A Rgon = 2 Ω VGE = ±15 V Figure 15 Output inverter FRED Figure 16 Output inverter FRED Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of IGBT turn on gate resistor IRRM = f(IC)I RRM = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 300 V VR = 300 V VGE = ±15 V IF = 75 A Rgon = 2 Ω VGE = ±15 V Output Inverter Tj = Tjmax - 25°C IRRM Tj = 25°C IRRM 120 150 02468 1 0 R gon ( Ω ) IrrM (A) Tj = Tjmax -25°C Qrr Tj = 25°C Qrr 02468 1 0 R go n ( Ω) Qrr( μC) Tj = Tjmax -25°C IRRM Tj = 25°C IRRM 120 150 0 30 60 90 120 150 I C (A) IrrM (A) Tj = Tjmax -25°C Qrr Tj = 25°C Qrr 0 30 60 90 120 150 I C (A) Qrr( μC)
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Figure 17 Output inverter FRED Figure 18 Output inverter FRED Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(IC)d I0/dt,dIrec/dt = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 300 V VR = 300 V VGE = ±15 V IF = 75 A Rgon = 2 Ω VGE = ±15 V Figure 19 Output inverter IGBT Figure 20 Output inverter FRED IGBT transient thermal impedance FRED transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp)Z thJH = f(tp) At At D = tp / T D = tp / T RthJH = 0,48 K/W RthJH = 0,73 K/W IGBT thermal model values FRED thermal model values R (C/W) Tau (s) R (C/W) Tau (s) 0,02 9,5E+00 0,02 9,5E+00 0,07 1,2E+00 0,09 1,1E+00 0,12 1,6E-01 0,14 1,4E-01 0,19 4,0E-02 0,29 3,7E-02 0,05 3,4E-03 0,11 4,7E-03 0,04 4,0E-04 0,09 4,8E-04 Output Inverter t p (s) ZthJH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) Zth-JH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 Tj = Tjmax - 25°C dI0/dt dIrec/dtHigh T dIrec/dt Tj = 25°C 2000 4000 6000 8000 10000 02468 1 0 R gon ( Ω ) direc / dt (A/ μs) di0/dtHigh T dIrec/dtHigh T dIrec/dtLow T dIo/dtLow T 2000 4000 6000 8000 10000 0 30 60 90 120 150 I C (A) direc / dt (A/ μs) dIrec/dt dI0/dt
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Figure 21 Output inverter IGBT Figure 22 Output inverter IGBT Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I C = f(Th) At At Tj = 175 °C single heating Tj = 175 °C overall heating VGE = 15 V Figure 23 Output inverter FRED Figure 24 Output inverter FRED Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I F = f(Th) At At Tj = 175 °C single heating Tj = 175 °C overall heating Output Inverter 100 200 300 400 0 50 100 150 200 T h ( o C) Ptot (W) 100 120 0 50 100 150 200T h ( o C) IC (A) 100 150 200 250 0 50 100 150 200 T h ( o C) Ptot (W) 100 0 50 100 150 200 T h ( o C) IF (A)
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Figure 25 Output inverter IGBT Figure 26 Output inverter IGBT Safe operating area as a function Gate voltage vs Gate charge of collector-emitter voltage IC = f(VCE)V GE = f(QGE) At At D = single pulse IC = 75 A Th = 80 ºC VGE = ±15 V Tj =T jmax ºC Output Inverter V CE (V) IC (A) 103 100 10-1 101 102 101 102 10uS 100uS 1mS10mS100mSDC 100 103 0 100 200 300 400 500 600 Q g (nC) VGE (V) 120V 480V
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Tj 150 °C Rgon 2 Ω Rgoff 2 Ω Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff)( tEon = integrating time for Eon) VGE (100%) = 15 V VGE (100%) = 15 V VC (100%) = 300 V VC (100%) = 300 V IC (100%) = 75 A IC (100%) = 75 A tdoff = 0,20 μs tdon = 0,13 μs tEoff = 0,46 μs tEon = 0,23 μs Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 300 V VC (100%) = 300 V IC (100%) = 75 A IC (100%) = 75 A tf = 0,10 μs tr = 0,02 μs Switching Definitions Output Inverter General conditions IC 1% VCE 90%VGE 90% -25 100 125 150 time (us) tdoff tEoff VCE IC VGE IC10%VGE10% tdon VCE 3% -40 110 160 210 260 2,8 2,95 3,1 3,25 3,4 3,55 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -20 100 120 140 0,05 0,1 0,15 0,2 0,25 0,3 0,35 time (us) VCEIC tf IC10% IC90% -20 100 140 180 220 260 2,95 3,03 3,11 3,19 3,27 3,35 time(us) tr VCE Ic
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Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 22,63 kW Pon (100%) = 22,63 kW Eoff (100%) = 2,27 mJ Eon (100%) = 0,89 mJ tEoff = 0,46 μs tEon = 0,23 μs Figure 7 Output inverter FRED Figure 8 Output inverter IGBT Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr VGEoff = -15 V Vd (100%) = 300 V VGEon = 15 V Id (100%) = 75 A VC (100%) = 300 V IRRM (100%) = -110 A IC (100%) = 75 A trr = 0,13 μs Qg = 12785,80 nC Switching Definitions Output Inverter IC 1% VGE 90% -20 100 120 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -20 100 120 2,95 3,05 3,15 3,25 3,35 time(us) Pon Eon tEon -20 -15 -10 -100 0 100 200 300 400 500 600 700 Qg (nC) VGE (V) IRRM10% IRRM90% IRRM100% trr -160 -120 -80 -40 120 3,05 3,1 3,15 3,2 3,25 3,3 3,35 time(us) Id Vd fitted
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Figure 9 Output inverter FRED Figure 10 Output inverter FRED Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr)( tErec= integrating time for Erec) Id (100%) = 75 A Prec (100%) = 22,63 kW Qrr (100%) = 6,46 μC Erec (100%) = 1,54 mJ tQrr = 0,26 μs tErec = 0,26 μs Switching Definitions Output Inverter tQrr -150 -100 -50 100 150 3,05 3,15 3,25 3,35 3,45 3,55 Id Qrr time(us) -20 100 120 3,05 3,15 3,25 3,35 3,45 3,55 time(us) Prec Erec tErec
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Version Ordering Code in DataMatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ062PA 075SA01-P993F18 P993F18 P993F18 without thermal paste 17mm housing 10-F0062PA075SA01-P993F19 P993F19 P993F19 Outline Pinout Ordering Code & Marking Ordering Code and Marking - Outline - Pinout
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PRODUCT STATUS DEFINITIONS Formative or In Design First Production Full Production DISCLAIMER LIFE SUPPORT POLICY As used herein: Preliminary This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Final This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Target Product StatusDatasheet Status Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.