FZ12 VINCOTECH | Alldatasheet
Document overview
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Technical content
- Trench Fieldstop IGBT4 technology
- 2-clip housing in 12mm and 17mm height
- Compact and low inductance design
- AlN substrate for improved performance
- Motor Drive
- UPS
- FZ122PA050SC01
- F0122PA050SC01 Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Inverter Transistor Th=80°C 69 Tc=80°C 86 Th=80°C 211 Tc=80°C 320 tSC Tj≤150°C 10 μs VCC VGE=15V 800 V Inverter Diode Th=80°C 69 Tc=80°C 90 Th=80°C 149 Tc=80°C 226 DC forward current A Tj=Tjmax tp limited by Tjmax AIF 100 Peak Repetitive Reverse Voltage Gate-emitter peak voltage tp limited by Tjmax Maximum Junction Temperature Power dissipation per IGBT VGE Tjmax Ptot Short circuit ratings V V Types Maximum Ratings Condition Features flow0 housing Target Applications Schematic IFRM Tjmax Repetitive peak forward current Power dissipation per Diode V W Collector-emitter break down voltage Repetitive peak collector current DC collector current VCE ICpulse IC W A150 A 1200 175 1200VRRM Ptot 175Maximum Junction Temperature °C Tj=Tjmax Tj=25°C Tj=Tjmax Tj=Tjmax ±20
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Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Maximum Ratings Condition Thermal Properties Insulation Properties Vis t=2s DC voltage 4000 V min 12,7 mm min 12,7 mmClearance Insulation voltage Creepage distance TopOperation temperature under switching condition -40…+(Tjmax - 25) °C Storage temperature Tstg -40…+125 °C
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VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,5 1,96 2,3 Tj=150°C 2,33 Tj=25°C 0,02 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 102 Tj=150°C 106 Tj=25°C 17 Tj=150°C 24 Tj=25°C 225 Tj=150°C 289 Tj=25°C 97 Tj=150°C 131 Tj=25°C 2,49 Tj=150°C 4,04 Tj=25°C 2,88 Tj=150°C 4,63 Thermal resi stance chip to heatsink per chip RthJH 0,45 Thermal resistance chip to case per chip RthJC Tj=25°C 1 1,76 2,2 Tj=150°C 1,69 Tj=25°C 80,03 Tj=150°C 87 Tj=25°C 128,7 Tj=150°C 290,7 Tj=25°C 4,26 Tj=150°C 8,9 di(rec)max Tj=25°C 4953 /dt Tj=150°C 1407 Tj=25°C 1,57 Tj=150°C 3,55 Thermal resi stance chip to heatsink per chip RthJH 0,64 Thermal resistance chip to case per chip RthJC V pF mWs Ω ns ns mA 193 2770 205 Rgon=8 Ω 600 1200 0,0018 Rgoff=8 Ω ±15 600 50 Gate-emitter leakage current Integrated Gate resistorInverter Transistor Gate emitter threshold voltage Fall time Turn-off delay time Turn-on delay time Rise time Gate charge Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Reverse recovered charge Inverter Diode Diode forward voltage ±15 50 f=1MHz Rgon=8 Ω A μC mWs A/μs 160 Characteristic Values ValueConditions Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Turn-on energy loss per pulse Collector-emitter cut-off current incl. Diode Erec Coss Rgint tf Eon Eoff IRRM td(on) Crss IGES VGE(th) VCE(sat) ICES Cies Qrr trr VF Peak reverse recovery current Reverse transfer capacitance QGate tr td(off) VCE=VGE ±15 V nC V nA Tj=25°C Tj=25°C K/W Thermal foil thickness=76um Kunze foil KU- ALF5 K/W Thermal foil thi ckness=76um Kunze foil KU- ALF5
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Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT Typical output characteristics IC = f(VCE) IC = f(VCE) At At tp = 350 μs tp = 350 μs Tj = 25 °C Tj = 150 °C VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V Figure 3 Output inverter IGBT Figure 4 Output inverter FRED Typical transfer characteristics Typical diode forward current as IC = f(VGE) a function of forward voltage IF = f(VF) At At tp = 350 μs tp = 350 μs VCE = 10 V Output Inverter Typical output characteristics 120 150 012345 V CE (V) IC (A) 02468 1 0 1 2 V GE (V) IC (A) Tj = 25°C Tj = Tjmax-25°C 120 150 00 , 511 , 522 , 53 V F (V) IF (A) Tj = 25°C Tj = Tjmax-25°C 120 150 012345 V CE (V) IC (A)
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Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VCE = 600 V VGE = ±15 V VGE = ±15 V Rgon = 8 Ω IC = 50 A Rgoff = 8 Ω Figure 7 Output inverter IGBT Figure 8 Output inverter IGBT Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(IC)E rec = f(RG) With an inductive load at With an inductive load at Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VCE = 600 V VGE = ±15 V VGE = ±15 V Rgon = 8 Ω IC = 50 A Output Inverter Eon High T Eoff High T Eon Low T Eoff Low T 1,5 4,5 7,5 0 2 04 06 08 0 1 00I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 1,5 4,5 7,5 0 8 16 24 32 40R G ( Ω ) E (mWs) Tj = Tjmax -25°C Erec Tj = 25°C Erec 0 2 04 06 08 0 1 0 0 I C (A) E (mWs) Tj = Tjmax -25°C Erec Tj = 25°C Erec 0 8 16 24 32 40 R G ( Ω ) E (mWs)
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Figure 9 Output inverter IGBT Figure 10 Output inverter IGBT Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 150 °C Tj = 150 °C VCE = 600 V VCE = 600 V VGE = ±15 V VGE = ±15 V Rgon = 8 Ω IC = 50 A Rgoff = 8 Ω Figure 11 Output inverter FRED Figure 12 Output inverter FRED Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of IGBT turn on gate resistor trr = f(IC) trr = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VR = 600 V VGE = ±15 V IF = 50 A Rgon = 8 Ω VGE = ±15 V Output Inverter tdoff tf tdon tr 0,001 0,01 0,1 0 2 04 06 08 0 1 00I C (A) t ( μs) Tj = Tjmax -25°C trr Tj = 25°C trr 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0 8 16 24 32 40R go n ( Ω ) t rr( μs) tdoff tf tdon tr 0,001 0,01 0,1 0 8 16 24 32 40R G ( Ω ) t ( μs) Tj = Tjmax -25°C trr trr Tj = 25°C 0,08 0,16 0,24 0,32 0,4 0 2 04 06 08 0 1 00I C (A) t rr( μs)
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Figure 13 Output inverter FRED Figure 14 Output inverter FRED Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of IGBT turn on gate resistor Qrr = f(IC)Q rr = f(Rgon) At At At Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VR = 600 V VGE = ±15 V IF = 50 A Rgon = 8 Ω VGE = ±15 V Figure 15 Output inverter FRED Figure 16 Output inverter FRED Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of IGBT turn on gate resistor IRRM = f(IC)I RRM = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VR = 600 V VGE = ±15 V IF = 50 A Rgon = 8 Ω VGE = ±15 V Output Inverter Tj = Tjmax - 25°C IRRM Tj = 25°C IRRM 120 150 180 0 8 16 24 32 40R gon ( Ω ) IrrM (A) Tj = Tjmax -25°C Qrr Tj = 25°C Qrr 0 8 16 24 32 40 R go n ( Ω) Qrr( μC) Tj = Tjmax -25°C IRRM Tj = 25°C IRRM 120 150 0 2 04 06 08 0 1 0 0 I C (A) IrrM (A) Tj = Tjmax -25°C Qrr Tj = 25°C Qrr 0 2 04 06 08 0 1 0 0 I C (A) Qrr( μC)
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Figure 17 Output inverter FRED Figure 18 Output inverter FRED Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of IGBT turn on gate resistor dI0/dt,dIrec/dt = f(IC)d I0/dt,dIrec/dt = f(Rgon) At At Tj = 25/150 °C Tj = 25/150 °C VCE = 600 V VR = 600 V VGE = ±15 V IF = 50 A Rgon = 8 Ω VGE = ±15 V Figure 19 Output inverter IGBT Figure 20 Output inverter FRED IGBT transient thermal impedance FRED transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp)Z thJH = f(tp) At At D = tp / T D = tp / T RthJH = 0,45 K/W RthJH = 0,64 K/W IGBT thermal model values FRED thermal model values R (C/W) Tau (s) R (C/W) Tau (s) 0,04 2,8E+00 0,02 9,5E+00 0,07 5,6E-01 0,08 1,1E+00 0,16 8,6E-02 0,14 1,4E-01 0,10 3,0E-02 0,26 3,4E-02 0,04 2,7E-03 0,08 3,9E-03 0,03 3,7E-04 0,06 4,6E-04 Output Inverter t p (s) ZthJH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) Zth-JH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 Tj = Tjmax - 25°C dI0/dt dIrec/dtHigh T dIrec/dt Tj = 25°C 2000 4000 6000 8000 10000 0 8 16 24 32 40 R gon ( Ω ) direc / dt (A/ μs) di0/dtHigh T dIrec/dtHigh T dIrec/dtLow T dIo/dtLow T 1000 2000 3000 4000 5000 6000 0 2 04 06 08 0 1 00I C (A) direc / dt (A/ μs) dIrec/dt dI0/dt
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Figure 21 Output inverter IGBT Figure 22 Output inverter IGBT Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I C = f(Th) At At Tj = 175 °C single heating Tj = 175 °C overall heating VGE = 15 V Figure 23 Output inverter FRED Figure 24 Output inverter FRED Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I F = f(Th) At At Tj = 175 °C single heating Tj = 175 °C overall heating Output Inverter 100 200 300 400 0 50 100 150 200 T h ( o C) Ptot (W) 100 110 0 50 100 150 200T h ( o C) IC (A) 100 150 200 250 300 0 50 100 150 200T h ( o C) Ptot (W) 100 110 0 50 100 150 200T h ( o C) IF (A)
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Figure 25 Output inverter IGBT Figure 26 Output inverter IGBT Safe operating area as a function Gate voltage vs Gate charge of collector-emitter voltage IC = f(VCE)V GE = f(QGE) At At D = single pulse IC = 50 A Th = 80 ºC VGE = ±15 V Tj =T jmax ºC Output Inverter V CE (V) IC (A) 103 100 10-1 101 102 101 102 10uS 100uS 1mS10mS 100mS DC 100 103 0 20 40 60 80 100 120 140 160 180 200 220 240 Q g (nC) VGE (V) 240V 960V
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Tj 150 °C Rgon 8 Ω Rgoff 8 Ω Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff)( tEon = integrating time for Eon) VGE (100%) = 15 V VGE (100%) = 15 V VC (100%) = 600 V VC (100%) = 600 V IC (100%) = 50 A IC (100%) = 50 A tdoff = 0,29 μs tdon = 0,10 μs tEoff = 0,70 μs tEon = 0,33 μs Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 600 V VC (100%) = 600 V IC (100%) = 50 A IC (100%) = 50 A tf = 0,13 μs tr = 0,03 μs Switching Definitions Output Inverter General conditions IC 1% VCE 90%VGE 90% -40 -20 100 120 140 time (us) tdoff tEoff VCE IC VGE IC10%VGE10% tdon VCE 3% -50 100 150 200 250 300 2,8 2,95 3,1 3,25 3,4 3,55 3,7 time(us) IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -20 100 120 140 0,1 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 time (us) VCEIC tf IC10% IC90% -50 100 150 200 250 300 2,95 3,025 3,1 3,175 3,25 3,325 3,4 time(us) tr VCE Ic
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Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 30,25 kW Pon (100%) = 30,25 kW Eoff (100%) = 4,66 mJ Eon (100%) = 4,02 mJ tEoff = 0,70 μs tEon = 0,33 μs Figure 7 Output inverter FRED Figure 8 Output inverter IGBT Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr VGEoff = -15 V Vd (100%) = 600 V VGEon = 15 V Id (100%) = 50 A VC (100%) = 600 V IRRM (100%) = -87 A IC (100%) = 50 A trr = 0,29 μs Qg = 2286,11 nC Switching Definitions Output Inverter IC 1% VGE 90% -20 100 120 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -50 100 150 200 250 2,9 3 3,1 3,2 3,3 3,4 3,5 time(us) % Pon Eon tEon -20 -15 -10 -50 0 50 100 150 200 250 300 350 Qg (nC) VGE (V) IRRM10% IRRM90% IRRM100% trr -200 -160 -120 -80 -40 120 3 3,1 3,2 3,3 3,4 3,5 3,6 time(us) Id Vd fitted
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Figure 9 Output inverter FRED Figure 10 Output inverter FRED Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr)( tErec= integrating time for Erec) Id (100%) = 50 A Prec (100%) = 30,25 kW Qrr (100%) = 8,75 μC Erec (100%) = 3,45 mJ tQrr = 0,59 μs tErec = 0,59 μs Switching Definitions Output Inverter tQrr -200 -150 -100 -50 100 150 3 3,15 3,3 3,45 3,6 3,75 3,9 Id Qrr time(us) -20 100 120 3 3,15 3,3 3,45 3,6 3,75 3,9 time(us) Prec Erec tErec
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Version Ordering Code in DataMatrix as in packaging barcode as without thermal paste 12mm housing 10-FZ122PA 050SC01-P997F18 P997F18 P997F18 without thermal paste 17mm housing 10-F0122PA050SC01-P997F19 P997F19 P997F19 Outline Pinout Ordering Code & Marking Ordering Code and Marking - Outline - Pinout
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PRODUCT STATUS DEFINITIONS Formative or In Design First Production Full Production DISCLAIMER LIFE SUPPORT POLICY As used herein: Preliminary This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Final This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Target Product StatusDatasheet Status Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.