F112R6A015SC VINCOTECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
- Inverter, blocking diodes
- Very compact housing, easy to route
- IGBT4 technology
- Power Regeneration
- 10-F112R6A015SC-M438E08
- 10-F112R6A015SC01-M438E18 Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1600 V Maximum Junction Temperature Tjmax 150 °C Inverter Transistor tSC Tj≤150°C 10 μs VCC VGE=15V 800 V Ptot Gate-emitter peak voltage Power dissipation per Diode I2t W Types I2t-value Maximum Ratings IFAV A2s IFSM Condition Blocking Diode A A Features flow1 housing Target Applications Schematic DC forward current Surge forward current T j=25°C 360 Tj=Tjmax tp=10ms Tj=Tjmax Ptot Repetitive peak collector current Power dissipation per IGBT Maximum Junction Temperature Short circuit ratings Turn off safe operating area Collector-emitter break down voltage DC collector current T j=Tjmax Tj=Tjmax VCE ≤ 1200V, Tj ≤ Top max tp limited by Tjmax Th=80°C A 1200 A V VCE IC VGE ICpulse Tjmax W A V °C175 Th=80°C 36 Th=80°C 42 370 Th=80°C 57 ±20
1 Revi sion: 3
Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Maximum Ratings Condition Inverter Diode Thermal Properties Insulation Properties Vis t=2s DC voltage 4000 V min 12.7 mm min 12.7 mm CTI >200Comparative tracking index Insulation voltage Creepage distance TopOperation temperature under switching condition Clearance -40…+(Tjmax - 25) °C Storage temperature Tstg -40…+125 °C Tj=Tjmax tp limited by Tjmax DC forward current Tj=Tjmax A IF VRRM Tj=25°C A W 175 °CMaximum Junction Temperature Peak Repetitive Reverse Voltage Repetitive peak forward current Power dissipation per Diode V Tjmax IFRM Ptot 1200 Th=80°C 38 Th=80°C 18
2 Revi sion: 3
VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 0.8 1.1 1.35 Tj=125°C 1.03 Tj=25°C 0.9 Tj=125°C 0.77 Tj=25°C 10 Tj=125°C 10 Tj=25°C 0.1 Tj=125°C Thermal resistance chip to heatsink per chip RthJH 1.68 Thermal resistance chip to heatsink per chip RthJC tbd. Tj=25°C 5 5.8 6.5 Tj=150°C Tj=25°C 1.6 1.84 2.25 Tj=150°C 2.25 Tj=25°C 0.005 Tj=150°C Tj=25°C 200 Tj=150°C Tj=25°C 85.2 Tj=150°C 84.8 Tj=25°C 17 Tj=150°C 21.8 Tj=25°C 201 Tj=150°C 264 Tj=25°C 82.1 Tj=150°C 123 Tj=25°C 0.82 Tj=150°C 1.26 Tj=25°C 0.88 Tj=150°C 1.36 Thermal resistance chip to heatsink per chip RthJH 1.67 Thermal resistance chip to case per chip RthJC tbd. Tj=25°C 1.35 1.90 2.35 Tj=150°C 1.91 Tj=25°C Tj=150°C 16.06 Tj=25°C Tj=150°C 433.4 Tj=25°C Tj=150°C 2.75 di(rec)max Tj=25°C /dt Tj=150°C 109 Tj=25°C Tj=150°C 1.16 Thermal resistance chip to heatsink per chip RthJH 2.52 Ther mal resistance chip to case per chip RthJC tbd. Tj=25°C mA Ω pF80 mWs ns ns A nC nA K/W V V Rgon=8 Ω Thermal grease thickness≤50um λ = 1 W/mK 1600 600 600 0.0005 1200 Collector-emitter saturation voltage Collector-emitter cut-off current incl. Diode Fall time Turn-off delay time Turn-on delay time Rise time Gate-emitter leakage current Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Turn-on energy loss per pulse Reverse recovered charge Inverter Diode Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Cies ±15 15 ±15Rgon=8 Ω Rgoff=8 Ω f=1MHz mWs A/μs K/W μC Reverse current Ir K/W V V mΩ mA Characteristic Values Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) V F Vto rt Blocking Diode ValueConditions Input capacitance Output capacitance Turn-off energy loss per pulse Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage VGE(th) VCE(sat) ICES Rgint IGES tf Eon Eoff td(on) IRRM VF Erec Coss Crss Qrr trr QGate tr td(off) VCE=VGE Thermal grease thickness≤50um λ = 1 W/mK ±15 V none Tj=25°C 120 900 Thermal grease thickness≤50um λ = 1 W/mK
3 Revisio n: 3
VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Characteristic Values ValueConditions Tj=25°C Tc=100°C Tc=100°C Tj=25°C Thermistor ΔR/R R100=1486 Ω Rated resistance R Power dissipation constant Deviation of R100 mW/K Power dissipation P mW 200 5-5 % Ω22000 B-value B(25/50) Tol. ±3% Tj=25°C 3950 K B(25/100) Tj=25°C 3996 KB-value Tol. ±3% Vincotech NTC Reference BTj=25°C Module Properties Thermal resistance, case to heatsink RthCH tbd. K/W Module stray inductance LsCE nH Chip module lead resistance, terminals -chip Rcc'1+EE' tbd. mΩ 3.8 Nm Terminal connection torque M 6.7 7 7.4 Mounting torque M tbd. 44 . 2 g Nm Weight G
4 Revisio n: 3
Version Ordering Code in DataMatrix as in packaging barcode as 12mm housing 10-F112R6A015SC-M438E08 M438-E08 M438-E08 12mm housing, without thermistor 10-F112R6A015SC01-M438E18 M438-E18 M438-E18 Outline Pinout Ordering Code & Marking Ordering Code and Marking - Outline - Pinout
5 Revi sion: 3
PRODUCT STATUS DEFINITIONS Formative or In Design First Production Full Production DISCLAIMER LIFE SUPPORT POLICY As used herein: Preliminary This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Final This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Target Product StatusDatasheet Status Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.