F206NIA200SA-M105F

Vincotech

High power flow2 housing

Manufacturer: Vincotech

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PDF pages: 24

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Neutral-point-Clamped inverter
High power flow2 housing
Low Inductance Layout
UPS
Solar inverters
F206NIA200SA Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Buck IGBT Th=80°C 155 Tc=80°C 200 Th=80°C 245 Tc=80°C 372 tSC Tj≤150°C 6 μs VCC VGE=15V 360 V Buck Diode Th=80°C 109 Tc=80°C 144 Th=80°C 158 Tc=80°C 239 DC forward current A Tj=Tjmax tp limited by Tjmax AIF Tc=100°C 600 VRRM Maximum Junction Temperature Power dissipation per IGBT VGE Tjmax Ptot Short circuit ratings Peak Repetitive Reverse Voltage Gate-emitter peak voltage V V Types Maximum Ratings Condition Features flow2 housing Target Applications Schematic IFRM Tjmax Repetitive peak forward current Power dissipation per Diode Ptot V W Collector-emitter break down voltage Repetitive peak collector current DC collector current VCE ICpulse IC ±20 W A A 175Maximum Junction Temperature °C 600 175 600 600 Tj=Tjmax Tj=25°C Tj=Tjmax Tj=Tjmax tp limited by Tjmax

1 Revi sion: 4

Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Maximum Ratings Condition Boost IGBT Th=80°C 154 Tc=80°C 200 Th=80°C 245 Tc=80°C 372 tSC Tj≤150°C 6 μs VCC VGE=15V 360 V Boost Inverse Diode Th=80°C 136 Tc=80°C 145 Th=80°C 190 Tc=80°C 190 Boost Diode Tj=25°C Th=80°C 138 Tc=80°C 183 Th=80°C 190 Tc=80°C 287 Thermal Properties Insulation Properties Vis t=2s DC voltage 4000 V min 12,7 mm min 12,7 mm 600 600 175 600 600 ±20 600 Clearance Insulation voltage Creepage distance T opOperation temperature under switching condition -40…+(Tjmax - 25) °C Storage temperature Tstg -40…+125 °C Peak Repetitive Reverse Voltage °CMaximum Junction Temperature Tjmax 175 Tj=TjmaxIC Power dissipation per Diode Ptot Tj=Tjmax Tj=TjmaxDC forward current IF Repetitive peak forward current IFRM tp limited by Tjmax VRRM VGE IF Tj=Tjmax Tjmax Ptot W A W V V A Peak Repetitive Reverse Voltage Repetitive peak forward current I FRM A ATj=Tjmax tp limited by Tjmax Short circuit ratings DC collector current Power dissipation per IGBT Collector-emitter break down voltage tp limited by TjmaxRepetitive peak collector current Gate-emitter peak voltage VCE ICpuls V A V W A Maximum Junction Temperature T jmax 175 Tc=25°CVRRM DC forward current PtotPower dissipation per Diode Tj=Tjmax Maximum Junction Temperature 600

2 Revi sion: 4

VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,05 1,51 1,85 Tj=150°C 1,75 Tj=25°C 0,66 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 240 Tj=150°C 245 Tj=25°C 42 Tj=150°C 42 Tj=25°C 310 Tj=150°C 341 Tj=25°C 71 Tj=150°C 104 Tj=25°C 3,14 Tj=150°C 4,22 Tj=25°C 6,14 Tj=150°C 7,89 Thermal resistance chip to heatsink per chip RthJH 0,39 Thermal resistance chip to case per chip RthJC 0,26 Tj=25°C 1,5 1,77 3,3 Tj=125°C 1,89 Tj=25°C 136 Tj=125°C 172 Tj=25°C 137 Tj=125°C 269 Tj=25°C 8,5 Tj=125°C 16,2 di(rec)max Tj=25°C 3158 /dt Tj=125°C 2901 Tj=25°C 2,02 Tj=125°C 3,66 Thermal resistance chip to heatsink per chip RthJH 0,60 Thermal resistance chip to case per chip RthJC 0,40 768 Ω mWs pF ns Tj=25°C Tj=25°C 2100 A V nA ns mA V 12320 Reverse recovered energy Peak rate of fall of recovery current Fall time Turn-off delay time Turn-on delay time Rgoff=4 Ω ±15 200 0,0032 Integrated Gate resistor Buck IGBT Gate emitter threshold voltage Collector-emitter cut-off current incl. Diode Gate-emitter leakage current Turn-on energy loss per pulse Reverse recovered charge Reverse recovery time Peak reverse recovery current Reverse transfer capacitance Diode forward voltage Gate charge Buck Diode μC mWs A/μs 366 Characteristic Values ValueConditions Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Rise time VGE(th) VCE(sat) ICES Rgint Erec Coss IRRM Crss VF QGate tr td(off) f=1MHz Rgon=4 Ω IGES tf Eon Eoff td(on) VCE=VGE Cies Qrr trr Rgoff=4 Ω ±15 200 200 nC V 200 200 350 600 350 700 Thermal grease thickness≤50um λ = 1 W/mK Thermal grease thickness≤50um λ = 1 W/mK K/W K/W

3 Revisio n: 4

VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Characteristic Values ValueConditions Tj=25°C 5 5,8 6,5 Tj=125°C Tj=25°C 1,05 1,51 1,85 Tj=125°C 1,75 Tj=25°C 0,66 Tj=125°C Tj=25°C 700 Tj=125°C Tj=25°C 233 Tj=125°C 239 Tj=25°C 43 Tj=125°C 45 Tj=25°C 309 Tj=125°C 335 Tj=25°C 65 Tj=125°C 88 Tj=25°C 3,95 Tj=125°C 4,87 Tj=25°C 5,88 Tj=125°C 7,64 Thermal resistance chip to heatsink per chip RthJH 0,39 Thermal resistance chip to case per chip RthJC 0,26 Tj=25°C 1,5 1,60 3,3 Tj=125°C 1,64 Thermal resistance chip to heatsink per chip RthJH 0,50 Thermal resistance chip to case per chip RthJC 0,33 Tj=25°C 1,5 1,60 3,3 Tj=150°C 1,65 Tj=25°C 600 Tj=150°C Tj=25°C 132 Tj=150°C 163 Tj=25°C 138 Tj=150°C 211 Tj=25°C 9,1 Tj=150°C 16,5 di(rec)max Tj=25°C 2672 /dt Tj=150°C 1616 Tj=25°C 2,17 Tj=150°C 4,15 Thermal resistance chip to heatsink per chip RthJH 0,50 Thermal resistance chip to case per chip RthJC 0,33 BVincotech NTC Reference 3996 K 3950 K B-value B(25/100) Tol. ±3% T=25°C T=25°CB-value B(25/50) Tol. ±3% R 768 12320 2100 T=25°C T=25°C T=100°C T=25°C 600 600 350 200 200 0,0032 200±15 Thermal grease thickness≤50um λ = 1 W/mK 200 Rgoff=4 Ω 200 350 Thermal grease thickness≤50um λ = 1 W/mK 0f=1MHz V CE=VGE IRRM Rgon=4 Ω Rgoff=4 Ω Diode forward voltage Reverse leakage current VF Ir Thermistor Reverse recovery energy trr Qrr Erec Reverse recovery time Peak rate of fall of recovery current ±15 0 mA nA V V I GES R100=1486 Ω Rated resistance Power dissipation constant Deviation of R100 ΔR/R Power dissipation P mW200 15 nC200 Tj=25°C mW/K ns mWs Ω Boost Diode 700 Reverse transfer capacitance Diode forward voltage VF Eon ICES VGE(th) VCE(sat) td(off) tr td(on) Rgint tf Collector-emitter cut-off incl diode Turn-on delay time Rise time Integrated Gate resistor Peak reverse recovery current Reverse recovered charge Turn-on energy loss per pulse Boost IGBT Gate-emitter leakage current Gate emitter threshold voltage Fall time Turn-off delay time Collector-emitter saturation voltage Cies Turn-off energy loss per pulse QGate Eoff Boost Inverse Diode Gate charge Input capacitance Output capacitance Crss Coss 366 Tj=25°C 5-5 22000 Ω A/μs A mWs μC V pF V μA ns Thermal grease thickness≤50um λ = 1 W/mK K/W K/W K/W

4 Revisio n: 4

Figure 1 IGBT Figure 2 IGBT Typical output characteristics IC = f(VCE) IC = f(VCE) At At tp = 350 μs tp = 350 μs Tj = 25 °C Tj = 25 °C VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V Figure 3 IGBT Figure 4 FRED Typical transfer characteristics Typical diode forward current as IC = f(VGE) a function of forward voltage I F = f(VF) At At tp = 350 μs tp = 350 μs VCE = 10 V Buck Typical output characteristics 100 200 300 400 500 600 012345 V CE (V) IC (A) 120 160 200 02468 1 0 1 2 V GE (V) IC (A) Tj = 25°C Tj = Tjmax-25°C 100 150 200 250 300 350 400 00 , 511 , 522 , 53 V F (V) IF (A) Tj = 25°C Tj = Tjmax-25°C 100 200 300 400 500 600 012345 V CE (V) IC (A)

5 Revis ion: 4

Figure 5 IGBT Figure 6 IGBT Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 200 A Rgoff = 4 Ω Figure 7 FRED Figure 8 FRED Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic)E rec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 200 A Buck Eon High T Eoff High T Eon Low T Eoff Low T 0 100 200 300 400 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 048 1 2 1 6 2 0 R G (W) E (mWs) Erec High T Erec Low T 0 100 200 300 400 I C (A) E (mWs) Erec High T Erec Low T 0 4 8 12 16 20 R G (W) E (mWs)

6 Revis ion: 4

Figure 9 IGBT Figure 10 IGBT Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 200 A Rgoff = 4 Ω Figure 11 FRED Figure 12 FRED Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of IGBT turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 200 A Rgon = 4 Ω VGE = ±15 V Buck tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 100 200 300 400 I C (A) t (ms) trr High T trr Low T 0,00 0,10 0,20 0,30 0,40 0,50 048 1 2 1 6 2 0 R gon (W) t rr(ms) tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 4 8 12 16 20 R G (W) t (ms) trr High T trr Low T 0,00 0,05 0,10 0,15 0,20 0,25 0,30 0,35 0 100 200 300 400 I C (A) t rr(ms)

7 Revis ion: 4

Figure 13 FRED Figure 14 FRED Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of IGBT turn on gate resistor Qrr = f(IC)Q rr = f(Rgon) At At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 200 A Rgon = 4 Ω VGE = ±15 V Figure 15 FRED Figure 16 FRED Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of IGBT turn on gate resistor I RRM = f(IC)I RRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 200 A Rgon = 4 Ω VGE = ±15 V Buck IRRM High T IRRM Low T 100 150 200 250 048 1 2 1 6 2 0 R gon (W) IrrM (A) Qrr High T Qrr Low T 048 1 2 1 6 2 0 R go n ( Ω) Qrr (mC) IRRM High T IRRM Low T 120 160 200 240 0 100 200 300 400 I C (A) IrrM (A) Qrr High T Qrr Low T 0 100 200 300 400 I C (A) Qrr (mC)

8 Revis ion: 4

Figure 17 FRED Figure 18 FRED Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of IGBT turn on gate resistor dI 0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 200 A Rgon = 4 Ω VGE = ±15 V Figure 19 IGBT Figure 20 FRED IGBT transient thermal impedance F RED transient thermal impedance as a function of pulse width as a function of pulse width Z thJH = f(tp)Z thJH = f(tp) At At D = tp / T D = tp / T RthJH = 0,39 K/W RthJH = 0,60 K/W IGBT thermal model values FRED thermal model values R (C/W) Tau (s) R (C/W) Tau (s) 0,02 1,2E+01 0,04 9,1E+00 0,10 2,6E+00 0,12 1,6E+00 0,07 4,8E-01 0,18 1,9E-01 0,11 5,9E-02 0,19 3,1E-02 0,05 1,3E-02 0,04 3,5E-03 0,02 4,9E-04 0,04 2,8E-04 Buck t p (s) ZthJH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) ZthJH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 dI0/dtHigh T dIrec/dtHigh T dI0/dtLow T dIrec/dtLow T 2000 4000 6000 8000 10000 0 4 8 12 16 20 R gon (W) direc / dt (A/ms) di0/dtHigh T dIrec/dtHigh T dIrec/dtLow T dIo/dtLow T 1500 3000 4500 6000 7500 0 100 200 300 400 I C (A) direc / dt (A/ms)

9 Revis ion: 4

Figure 21 IGBT Figure 22 IGBT Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I C = f(Th) At At Tj = 175 °C Tj = 175 °C VGE = 15 V Figure 23 FRED Figure 24 FRED Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I F = f(Th) At At Tj = 175 °C Tj = 175 °C Buck 100 200 300 400 500 0 50 100 150 200 T h ( o C) Ptot (W) 100 150 200 250 0 50 100 150 200 T h ( o C) IC (A) 100 150 200 250 300 0 50 100 150 200 T h ( o C) Ptot (W) 100 150 200 0 50 100 150 200 T h ( o C) IF (A)

10 Rev ision: 4

Figure 25 IGBT Figure 26 IGBT Safe operating area as a function Gate voltage vs Gate charge of collector-emitter voltage IC = f(VCE)V GE = f(Qg) At At D = single pulse IC = 200 A Th = 80 ºC VGE = ±15 V Tj =T jmax ºC Buck V CE (V) IC (A) 103 100 10-1 101 102 101 102 100uS 10uS 100uS 1mS10mS 100mS DC 100 103 0 250 500 750 1000 1250 1500 Q g (nC) VGE (V) 120V 480V Copyright by Vincotech

Figure 1 IGBT Figure 2 IGBT Typical output characteristics Typical output characteristics IC = f(VCE) IC = f(VCE) At At tp = 250 μs tp = 250 μs Tj = 25 °C Tj = 125 °C VGE from 7 V to 17 V in steps of 1 V VGE from 7 V to 17 V in steps of 1 V Figure 3 IGBT Figure 4 FRED Typical transfer characteristics Typical diode forward current as IC = f(VGE) a function of forward voltage I F = f(VF) At At tp = 250 μs tp = 250 μs VCE = 10 V Boost 150 300 450 600 0,0 1,0 2,0 3,0 4,0 5,0 V CE (V) IC (A) 100 150 200 250 02468 1 0 1 2 1 4 V GE (V) IC (A) Tj = 25°CTj = Tjmax-25°C 100 150 200 250 300 350 400 0 0,5 1 1,5 2 2,5 3 V F (V) IF (A) Tj = 25°C Tj = Tjmax-25°C 150 300 450 600 0,0 1,0 2,0 3,0 4,0 5,0 V CE (V) IC (A)

12 Rev ision: 4

Figure 5 IGBT Figure 6 IGBT Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 201 A Rgoff = 4 Ω Figure 7 IGBT Figure 8 IGBT Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic)E rec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 201 A Boost Erec High T Erec Low T 1,5 4,5 7,5 0 100 200 300 400I C (A) E (mWs) Erec High T Erec Low T 0 4 8 12 16 20 R G ( Ω ) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 100 200 300 400 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 4 8 12 16 20 R G ( Ω ) E (mWs)

13 Rev ision: 4

Figure 9 IGBT Figure 10 IGBT Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 350 V VCE = 350 V VGE = ±15 V VGE = ±15 V Rgon = 4 Ω IC = 201 A Rgoff = 4 Ω Figure 11 FRED Figure 12 FRED Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of IGBT turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 201 A Rgon = 4 Ω VGE = ±15 V Boost tdoff tf tdon tr 0,001 0,01 0,1 0 100 200 300 400 I C (A) t ( μs) tdoff tf tdon tr 0,001 0,01 0,1 0 4 8 12 16 20 R G ( Ω ) t ( μs) trr High T trr Low T 0,00 0,08 0,16 0,24 0,32 0,40 0 4 8 12 16 20 R gon (W) t rr(ms) trr High T trr Low T 0,00 0,08 0,16 0,24 0,32 0,40 0 100 200 300 400 I C (A) t rr(ms)

14 Rev ision: 4

Figure 13 FRED Figure 14 FRED Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of IGBT turn on gate resistor Qrr = f(IC)Q rr = f(Rgon) At At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 201 A Rgon = 4 Ω VGE = ±15 V Figure 15 FRED Figure 16 FRED Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of IGBT turn on gate resistor I RRM = f(IC)I RRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 201 A Rgon = 4 Ω VGE = ±15 V Boost IRRM High T IRRM Low T 100 150 200 250 048 1 2 1 6 2 0 R gon (W) IrrM (A) Qrr High T Qrr Low T 0 4 8 12 16 20 R go n ( Ω) Qrr (mC) IRRM High T IRRM Low T 100 150 200 250 0 100 200 300 400 I C (A) IrrM (A) Qrr High T Qrr Low T 0 100 200 300 400 I C (A) Qrr (mC)

15 Rev ision: 4

Figure 17 FRED Figure 18 FRED Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of IGBT turn on gate resistor dI 0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 350 V VR = 350 V VGE = ±15 V IF = 201 A Rgon = 4 Ω VGE = ±15 V Figure 19 IGBT Figure 20 FRED IGBT transient thermal impedance F RED transient thermal impedance as a function of pulse width as a function of pulse width Z thJH = f(tp)Z thJH = f(tp) At At D = tp / T D = tp / T RthJH = 0,39 K/W RthJH = 0,50 K/W IGBT thermal model values FRED thermal model values R (C/W) Tau (s) R (C/W) Tau (s) 0,02 1,2E+01 0,04 9,6E+00 0,10 2,6E+00 0,10 1,7E+00 0,07 4,8E-01 0,09 2,6E-01 0,11 5,9E-02 0,18 3,6E-02 0,05 1,3E-02 0,05 7,1E-03 0,02 4,9E-04 0,04 4,0E-04 Boost t p (s) ZthJH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101 110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) ZthJH (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101 110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 dI0/dtHigh T dIrec/dtHigh T dI0/dtLow T dIrec/dtLow T 2000 4000 6000 8000 10000 0 4 8 12 16 20 R gon (W) direc / dt (A/ms)di0/dtHigh T dIrec/dtHigh T dIrec/dtLow T dIo/dtLow T 1500 3000 4500 6000 7500 0 100 200 300 400 I C (A) direc / dt (A/ms)

16 Rev ision: 4

Figure 21 IGBT Figure 22 IGBT Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I C = f(Th) At At Tj = 175 ºC Tj = 175 ºC VGE = 15 V Figure 23 FRED Figure 24 FRED Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I F = f(Th) At At Tj = 175 ºC Tj = 175 ºC Boost 100 200 300 400 500 0 50 100 150 200 T h ( o C) Ptot (W) 120 160 200 240 0 50 100 150 200 T h ( o C) IC (A) 100 150 200 250 300 350 0 50 100 150 200 Th ( o C) Ptot (W) 120 160 200 240 0 50 100 150 200 Th ( o C) IF (A)

17 Rev ision: 4

Figure 25 Boost Inverse Diode Figure 26 Boost Inverse Diode Typical diode forward current as Diode transient thermal impedance a function of forward voltage as a function of pulse width IF = f(VF) ZthJH = f(tp) At At tp = 250 μs D = tp / T RthJH = 0,50 K/W Figure 27 Boost Inverse Diode Figure 28 Boost Inverse Diode Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th)I F = f(Th) At At Tj = 175 ºC Tj = 175 ºC Boost 100 150 200 250 300 350 400 0 0,5 1 1,5 2 2,5 V F (V) IF (A) Tj = 25°C Tj = Tjmax-25°C t p (s) ZthJC (K/W) 100 10-1 10-2 10-4 10-3 10-2 10-1 100 101110-5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 100 150 200 250 300 350 0 50 100 150 200 Th ( o C) Ptot (W) 120 160 200 0 50 100 150 200 Th ( o C) IF (A)

18 Rev ision: 4

Typical NTC characteristic as a function of temperature RT = f(T) Thermistor NTC-typical temperature characteristic 5000 10000 15000 20000 25000 25 50 75 100 125 T (°C) R/Ω

19 Rev ision: 4

Tj 125 °C Rgon 4 Ω Rgoff 4 Ω Figure 1 Output inverter IGBT Figure 2 Output inverter IGBT Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff)( tEon = integrating time for Eon) VGE (100%) = 15 V VGE (100%) = 15 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 201 A IC (100%) = 201 A tdoff = 0,34 μs tdon = 0,25 μs tEoff = 0,59 μs tEon = 0,45 μs Figure 3 Output inverter IGBT Figure 4 Output inverter IGBT Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 201 A IC (100%) = 201 A tf = 0,10 μs tr = 0,04 μs Switching Definitions BUCK IGBT General conditions IC 1% VCE 90%VGE 90% -20 100 120 140 time (us) tdoff tEoff VCE IC VGE IC10%VGE10% tdon VCE3% -40 120 160 200 3,8 3,9 4 4,1 4,2 4,3 4,4 4,5 4,6 4,7 time(us) IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -20 100 120 140 0,15 0,2 0,25 0,3 0,35 0,4 0,45 0,5 0,55 time (us) VCEIC tf IC10% IC90% -20 100 130 160 190 4,1 4,15 4,2 4,25 4,3 4,35 4,4 4,45 time(us) tr VCE Ic

20 Rev ision: 4

Figure 5 Output inverter IGBT Figure 6 Output inverter IGBT Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 140,86 kW Pon (100%) = 140,86 kW Eoff (100%) = 7,89 mJ Eon (100%) = 4,22 mJ tEoff = 0,59 μs tEon = 0,45 μs Figure 7 Output inverter FRED Figure 8 Output inverter IGBT Gate voltage vs Gate charge (measured) Turn-off Switching Waveforms & definition of trr VGEoff = -15 V Vd (100%) = 700 V VGEon = 15 V Id (100%) = 201 A VC (100%) = 700 V IRRM (100%) = -172 A IC (100%) = 201 A trr = 0,27 μs Qg = 2106,06 nC Switching Definitions BUCK MOSFET IC 1% VGE90% -20 100 120 Poff Eoff tEoff VCE3% VGE10% -20 100 120 140 3,8 3,9 4 4,1 4,2 4,3 4,4 4,5 4,6 4,7 time(us) Pon Eon tEon -20 -15 -10 -500 0 500 1000 1500 2000 2500 Qg (nC) VGE (V) IRRM10% IRRM90% IRRM100% trr -120 -80 -40 120 time(us) Id Vd fitted

21 Rev ision: 4

Figure 9 Output inverter FRED Figure 10 Output inverter FRED Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr)( tErec= integrating time for Erec) Id (100%) = 201 A Prec (100%) = 140,86 kW Qrr (100%) = 16,20 μC Erec (100%) = 3,66 mJ tQrr = 0,55 μs tErec = 0,55 μs Figure 11 Figure 12 BUCK stage switching measurement circuit BOOST stage switching measurement circuit Measurement circuits Switching Definitions BUCK MOSFET tQrr -100 -50 100 150 3,9 4,1 4,3 4,5 4,7 4,9 5,1 time(us) Id Qrr -20 100 120 4 4,15 4,3 4,45 4,6 4,75 4,9 5,05 5,2 time(us) Prec Erec tErec

22 Rev ision: 4

Version Ordering Code in DataMatrix as in packaging barcode as Standard in flow2 housing 30-F206NIA200SA-M105F M105F M105F Outline Pinout Ordering Code & Marking Ordering Code and Marking - Outline - Pinout

23 Revi sion: 4

PRODUCT STATUS DEFINITIONS Formative or In Design First Production Full Production DISCLAIMER LIFE SUPPORT POLICY As used herein: Preliminary This datasheet contains preliminary data, and supplementary data may be published at a later date. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Final This datasheet contains final specifications. Vincotech reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff. Target Product StatusDatasheet Status Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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Product Information

F206NIA200SA-M105F specifications and overview.

Summary

High power flow2 housing

Description

High power flow2 housing

Source title F206NIA200SA-M105F Datasheet(PDF) - Vincotech

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