DSF8045SK DYNEX | Alldatasheet

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APPLICATIONS

n Snubber Diode For GTO Applications

FEATURES

IF(AV) 430A IFSM 3500A Q r 440µC trr 3.07µs 4500 4400 4300 4200 4100 4000 DSF8045SK45 DSF8045SK44 DSF8045SK43 DSF8045SK42 DSF8045SK41 DSF8045SK40 Conditions V RSM = VRRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage VRRM V Outline type code: K. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load, Tcase = 65oC 430 A Tcase = 65oC 680 A Tcase = 65oC 600 A Half wave resistive load, Tcase = 65oC 285 A Tcase = 65oC 445 A Tcase = 65oC 380 A DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000

Conditions Max. Units 3.5 kA 61.25 x 103 A2sI2t for fusingI2t Surge (non-repetitive) forward currentIFSM ParameterSymbol 10ms half sine; with 0% VRRM, Tj = 150oC 2.8 kA 39.2 x 103 A2sI2t for fusingI2t Surge (non-repetitive) forward currentIFSM 10ms half sine; with 50% VRRM, Tj = 150oC THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W- 0.09Anode dc Clamping force 8.0kN with mounting compoundThermal resistance - case to heatsinkR th(c-h) 0.01Double side - Single side Thermal resistance - junction to caseR th(j-c) Single side cooled Symbol Parameter - 0.02 oC/W oC/W Cathode dc - 0.103 oC/W Double side cooled - 0.048 oC/W Tstg Storage temperature range -55 175 oC kN9.07.0Clamping force- Tvj Virtual junction temperature Forward (conducting) - 150 oC Min.

Symbol Typ. UnitsParameter VFM Forward voltage IRRM Peak reverse current Reverse recovery time Q RA1 Recovered charge (50% chord) IRM Reverse recovery current K Soft factor VTO Threshold voltage rT Slope resistance VFRM Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 300 V At Tvj = 150oC - 2.1 m Ω At Tvj = 150oC - 1.7 V --- - 240 A - 440 µC - 3.07 µs At VRRM , Tcase = 150oC- m A At 1000A peak, Tcase = 25oC - 4.0 V Conditions Max. IF = 1000A, diRR /dt = 100A/µs Tcase = 150oC, VR = 100V DEFINITION OF K FACTOR AND Q RA1 0.5x IRR IRR dIR /dt t1 t2 τ Q RA1 = 0.5x IRR (t1 + t2) k = t1/t2

2500Instantaneous forward current IF - (A) Instantaneous forward voltage VF - (V) Measured under pulse conditions Tj = 150˚C Tj = 25˚C 100 200 300 400 500 Instantaneous forward current IF - (A) Instantaneous forward voltage VF - (V) Measured under pulse conditions Tj = 25˚C Tj = 150˚C Fig.1 Maximum (limit) forward characteristics Fig.2 Maximum (limit) forward characteristics

Transient forward votage VFP - (V) 0 500 1000 1500 2000 Rate of rise of forward current dIF/dt - (A/µs) Tj = 125˚C limit Tj = 25˚C limit Current waveform Voltage waveform VFR δy δx di = δy dt δx Fig.3 Transient forward voltage vs rate of rise of forward current

Rate of rise of reverse current dIR /dt - (A/µs) 100 1000 10000Reverse recovered charge QS - (µC) IRR Q S tp = 1ms IF dIR /dt Q S = ∫ Conditions: Tj = 150˚C, VR = 100V 50µs IF = 2000A IF = 1000A Fig. 4 Typical recovered charge 1 10 100 1000 Rate of rise of reverse current dIR /dt - (A/µs) 100 1000 Reverse recovery current IRR - (A) Conditions: Tj = 150˚C, VR = 100V IF = 2000A IF = 1000A Fig. 5 Typical reverse recovery current vs rate of rise of reverse current

1010.10.010.001 Time - (s) 0.1 0.01

0.001 Thermal impedance - (˚C/W)

Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 Holes Ø3.6 x 2.0 deep (One in each electrode) 27.0 25.4 Ø25 nom Cathode Ø42 max Ø25 nom Anode Nominal weight: 160g Clamping force: 8kN –10% Package outine type code: K ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 Use of VTO , rT on-state characteristic AN5001

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre- loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4150-6 Issue No. 6.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.