DSF20545SF44

DSF20545SF_04 DYNEX | Alldatasheet

Document overview

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Technical content

www.dynexsemi.com Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004

APPLICATIONS

I A.C. Motor Drives I Inverters And Choppers I Welding I High Frequency Rectification I UPS

FEATURES

IF(AV) 1256A IFSM 16000A Qr 1250µC trr 7.0µs 4500 4400 4300 4200 4100 4000 DSF20545SF45 DSF20545SF44 DSF20545SF43 DSF20545SF42 DSF20545SF41 DSF20545SF40 Conditions V RSM = VRRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage VRRM V Outline type code: CB450. See Package Details for further information. DSF20545SF Fast Recovery Diode Advance Information

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF20545SF43 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. Fig. 1 Package outline

www.dynexsemi.com DSF20545SF SURGE RATINGS Conditions Max. Units 16 kA 1280 x 103 A2sI2t for fusingI2t Surge (non-repetitive) forward currentIFSM ParameterSymbol 10ms half sine; with 0% VRRM, Tj = 150oC 12.8 kA

819.2 X 103 A2sI2t for fusingI2t

Surge (non-repetitive) forward currentIFSM 10ms half sine; with 50% VRRM, Tj = 150oC -k A -A 2sI2t for fusingI2t Surge (non-repetitive) forward currentIFSM 10ms half sine; with 100% VRRM, Tj = 150oC CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load, Tcase = 65oC 1256 A Tcase = 65oC 1971 A Tcase = 65oC 1765 A Half wave resistive load, Tcase = 65oC 995 A Tcase = 65oC 1552 A Tcase = 65oC 1335 A DEFINITION OF K FACTOR AND QRA1 0.5x IRR IRR dIR/dt t1 t2 τ QRA1 = 0.5x IRR(t1 + t2) k = t1/t2

www.dynexsemi.com THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W- 0.032Anode dc Clamping force 15kN with mounting compoundThermal resistance - case to heatsinkRth(c-h) 0.004Double side - Single side Thermal resistance - junction to caseRth(j-c) Single side cooled Symbol Parameter - 0.008 oC/W oC/W Cathode dc - 0.032 oC/W Double side cooled - 0.022 oC/W Tstg Storage temperature range -55 150 oC kN21.517.5Clamping force- Tvj Virtual junction temperature On-state (conducting) - 150 oC Min. trr Symbol Typ. UnitsParameter VFM Forward voltage IRRM Peak reverse current Reverse recovery time QRA1 Recovered charge (50% chord) IRM Reverse recovery current K Soft factor VTO Threshold voltage rT Slope resistance VFRM Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 160 V At Tvj = 150oC - 0.47 m Ω At Tvj = 150oC - 1.36 V 1.8 - - - 400 A - 1250 µC -7 . 0 µs At VRRM, Tcase = 150oC- m A At 1800A peak, Tcase = 25oC- 2 . 1 V Conditions Max. IF = 1000A, diRR/dt = 100A/µs Tcase = 150oC, VR = 100V CHARACTERISTICS

www.dynexsemi.com DSF20545SF CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Maximum (limit) forward characteristics Fig.4 Transient forward voltage vs rate of rise of forward current Fig.5 Recovered charge 500 1000 1500 2000 2500 3000Instantaneous forward current IF - (A) Instantaneous forward voltage VF - (V) Measured under pulse conditions Tj = 150˚C Tj = 25˚C 3500 4000 100 200 300 400 500Instantaneous forward current IF - (A) 0.75 1.0 1.25 1.5 Instantaneous forward voltage VF - (V) Measured under pulse conditions Tj = 150˚C Tj = 25˚C 100 150 200 250Transient forward votage VFP - (V) 0 500 1000 1500 2000 Rate of rise of forward current dIF/dt - (A/µs) Tj = 125˚C limit Tj = 25˚C limit Current waveform Voltage waveform VFR δy δx di = δy dt δx 11 0 1 0 0 1 0 0 0 Rate of rise of reverse current dIR/dt - (A/µs) 1000 100 10000 100000Reverse recovered charge Qrr - (µC) Conditions: Tj = 150˚C, VR = 100V IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A IRR QS tp = 1ms IF dIR/dt QS = 50µs

www.dynexsemi.com Fig.6 Typical reverse recovery current vs rate of rise of forward current Fig.7 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 1 10 100 1000 Rate of rise of reverse current dIR/dt - (A/µs) 100 1000 10000Reverse recovery current Irr - (A) Conditions: Tj = 150˚C, VR = 100V IF = 2000A IF = 1000A IF = 500A IF = 200A IF = 100A 0.1 0.01

0.001 Thermal Impedance - junction to case, Zth(j-c) - (˚C/W)

0.001 0.01 0.1 1.0 10 Time - (s) Double side cooled

www.dynexsemi.com DSF20545SF PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Ø48 nom 27.0 25.4 Cathode Anode Ø48 nom Ø76 max Nominal weight: 500g Clamping force: 19.6kN ± 10%

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.