DSF11060SG_04 DYNEX | Alldatasheet

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Technical content

www.dynexsemi.com Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004

APPLICATIONS

I Snubber Diode For GTO Circuits

FEATURES

IF(AV) 400A IFSM 4200A Qr 700µC trr 6.0µs 6000 5800 5600 5500 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 Conditions V RSM = VRRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage VRRM V Outline type code: M779b. See Package Details for further information. DSF11060SG Fast Recovery Diode

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DSF11060SG58 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. Fig. 1 Package outline

www.dynexsemi.com DSF11060SG SURGE RATINGS Conditions Max. Units 4.2 kA 88 x 103 A2sI2t for fusingI2t Surge (non-repetitive) forward currentIFSM ParameterSymbol 10ms half sine; with 0% VRRM, Tj = 150oC 3.4 kA 57.8 x 103 A2sI2t for fusingI2t Surge (non-repetitive) forward currentIFSM 10ms half sine; with 50% VRRM, Tj = 150oC THERMAL AND MECHANICAL DATA dc Conditions Max. Units oC/W- 0.064Anode dc Clamping force 12kN with mounting compoundThermal resistance - case to heatsinkRth(c-h) 0.008Double side - Single side Thermal resistance - junction to caseRth(j-c) Single side cooled Symbol Parameter - 0.016 oC/W oC/W Cathode dc - 0.064 oC/W Double side cooled - 0.032 oC/W Tstg Storage temperature range -55 125 oC kN13.210.8Clamping force- Tvj Virtual junction temperature Forward (conducting) - 135 oC Min. CURRENT RATINGS Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load, Tcase = 65oC 400 A Tcase = 65oC 631 A Tcase = 65oC 585 A Half wave resistive load, Tcase = 65oC 265 A Tcase = 65oC 420 A Tcase = 65oC 365 A

www.dynexsemi.com trr Symbol Typ. UnitsParameter VFM Forward voltage IRRM Peak reverse current Reverse recovery time QRA1 Recovered charge (50% chord) IRM Reverse recovery current K Soft factor VTO Threshold voltage rT Slope resistance VFRM Forward recovery voltage di/dt = 1000A/µs, Tj = 100oC - 400 V At Tvj = 125oC- 2 . 9 m Ω At Tvj = 125oC- 1 . 5 V 1.7 - - 350 - A - 1000 µC 6.0 - µs At VRRM, Tcase = 125oC- m A At 600A peak, Tcase = 25oC- 3 . 8 V Conditions Max. IF = 1000A, diRR/dt = 100A/µs Tcase = 125oC, VR = 100V CHARACTERISTICS DEFINITION OF K FACTOR AND QRA1 0.5x IRR IRR dIR/dt t1 t2 τ QRA1 = 0.5x IRR(t1 + t2) k = t1/t2

www.dynexsemi.com DSF11060SG CURVES Fig.2 Recovered charge Fig.3 Typical reverse recovery current vs rate of rise of forward current Fig.4 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 1 10 100 1000 Rate of rise of reverse current dIR/dt - (A/µs) 1000 100 10000Reverse recovered charge Qrr - (µC) Conditions: Tj = 125˚C, VR = 100V A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A E: IF = 100A A B C D E IRR QS tp = 1ms IF dIR/dt QS = 50µs 1 10 100 1000 Rate of rise of reverse current dIR/dt - (A/µs) 100 1000Reverse recovery current IRR - (A) Conditions: Tj = 125˚C, VR = 100V A: IF = 2000A B: IF = 1000A C: IF = 500A D: IF = 200A E: IF = 100A A B D E C 0.100 0.010

0.001 Thermal impedance, junction to case, Zth(j-c) - (˚C/W)

0.01 0.1 1 10 100 Time - (s) d.c. Double side cooled

www.dynexsemi.com PACKAGE DETAILS (Alternative outline G includes gate connections, all other details are the same as M779b). For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Ø34 nom 27.0 25.4 Cathode AnodeØ34 nom Ø58.5 max Nominal weight: 310g Clamping force: 12kN ±10% Package outline type code: M779b

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.