DS2906SA

DS2906SA DYNEX | Alldatasheet

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Technical content

DS5922-1.1 March 2009 (LN26638) www.dynexsemi.com

FEATURES

/G1 Double Side Cooling /G1 High Surge Capability

APPLICATIONS

/G1 Rectification /G1 Free-wheel Diode /G1 DC Motor Control /G1 Power Supplies /G1 Welding /G1 Battery Chargers VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V Conditions DS2906SA40 DS2906SA39 DS2906SA38 DS2906SA37 DS2906SA36 DS2906SA35 4000 3900 3800 3700 3600 3500 VRSM = VRRM+100V Lower voltage grades available.

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DS2906SA39 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. KEY PARAMETERS VRRM 4000V IF(AV) 5651A IFSM 83000A Outline type code: A (See Package Details for further information) Fig. 1 Package outlines

www.dynexsemi.com CURRENT RATINGS Tcase = 75° C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load 5651 A IF(RMS) RMS value - 8877 A IF Continuous (direct) on-state current - 8208 A Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load 3707 A IF(RMS) RMS value - 5821 A IF Continuous (direct) on-state current - 4976 A Tcase = 100° C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load 4350 A IF(RMS) RMS value - 6830 A IF Continuous (direct) on-state current - 6160 A Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load 2795 A IF(RMS) RMS value - 4390 A IF Continuous (direct) on-state current - 3640 A

www.dynexsemi.com SURGE RATINGS Symbol Parameter Test Conditions Max. Units IFSM Surge (non-repetitive) on-state current 10ms half si ne, Tcase = 150° C 66.5 kA I2t I 2t for fusing VR = 50% VRRM - ¼ sine 22 MA 2s IFSM Surge (non-repetitive) on-state current 10ms half si ne, Tcase = 150° C 83 kA I2t I 2t for fusing VR = 0 34.5 MA 2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side co oled DC - 0.0065 ° C/W Single side cooled Anode DC - 0.013 ° C/W Cathode DC - 0.013 ° C/W Rth(c-h) Thermal resistance – case to heatsink Clamping force 83.0kN Double side - 0.001 ° C/W (with mounting compound) Single side - 0.002 ° C/W Tvj Virtual junction temperature On-state (conducting) - 1 60 ° C Reverse (blocking) - 150 ° C Tstg Storage temperature range -55 150 ° C Fm Clamping force 75.0 91.0 kN CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, T case = 25° C - 1.06 V IRM Peak reverse current At V DRM, Tcase = 150° C - 400 mA VTO Threshold voltage At T vj = 150° C - 0.78 V rT Slope resistance At T vj = 150° C - 0.0763 m/G1

www.dynexsemi.com CURVES 1000 2000 3000 4000 5000 6000 7000 8000 Instantaneous forward voltage, VF - (V) Instantaneous forward current, IF - (A) Tj = 150°C Tj = 25°C 1000 2000 3000 4000 5000 6000 7000 0 1000 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Mean power dissipation - (W) dc 1/2 wave 3 phase 6 phase Fig.2 Maximum (limit) forward characteristics Fig.3 Power loss curves VTM EQUATION Where A = - 0.01591 B = 0.113682 VTM = A + Bln (IT) + C.IT+D./G1IT C = 8.04 x 10-5 D = - 0.00284 these values are valid for Tj = 150° C for IF 500A to 7000A

www.dynexsemi.com 2000 4000 6000 8000 10000 12000 14000 16000 0 1 2 3 4 5 6 7 8 Rate of decay of forward current, dIf/dt - (A/µs) Stored charge, Qs - (µC) 100 150 200 250 300 350 0 1 2 3 4 5 6 7 8 Rate of decay of forward current, dIf/dt - (A/µs) Reverse recovery current, IRR - (A) Fig.4 Stored charge Fig.5 Reverse recovery current 1010.10.010.001 Time - (s) 0.1 0.01 0.001

0.0001 Thermal impedance - (° C/W)

d.c. Halfwave 3 phase 120° 6 phase 60° Effective thermal resistance Junction to case ° C/W Double side 0.0065 0.0072 0.0073 0.0076 Single side 0.013 0.0137 0.0138 0.0141 0 1 10 100 Number of pulses Surge current IFSM - (kA) Conditions : Tcase = 150ºC VR = 0 Pulse width = 10ms Fig.6 Maximum (limit) transient thermal impedance – junction to case Fig.7 Multi-cycle surge current

www.dynexsemi.com 100 120 140 1 10 100 Pulse width, tp - (ms) Surge current, IFSM - (kA) I2t value - (MA2s) Conditions: T case = 150ºC VR = 0 half sine wave Fig.8 Sub-cycle surge current

www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Ø100 nom Cathode Anode 35.0 ± 0.5 Ø100 nom Ø148 nom Ø138.5 Nominal weight: 2575g Clamping force: 83kN ±10% Package outline type code: A 2 holes Ø 3.6 x 2.0 deep (In both electrodes)

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range o f heatsink and clamping systems in line with advanc es in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power As sembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cool ing (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme c onditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety pre cautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 /G1 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only wh ich (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. No warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. The Company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. Inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. All products and materials ar e sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.