DS2102SY DYNEX | Alldatasheet
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Technical content
www.dynexsemi.com DS2102SY
FEATURES
APPLICATIONS
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2102SY18 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. KEY PARAMETERS VRRM 2000V IF(AV) 6654A IFSM 100000A DS2102SY Rectifier Diode Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001 2000 1900 1800 1700 1600 1500 DS2102SY20 DS2102SY19 DS2102SY18 DS2102SY17 DS2102SY16 DS2102SY15 Conditions V RSM = VRRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage VRRM V Outline type code: F See Package Details for further information. Fig. 1 Package outline
www.dynexsemi.com DS2102SY Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load, Tcase = 100oC 5460 A Tcase = 100oC 8575 A Tcase = 100oC 7450 A Half wave resistive load, Tcase = 100oC 3410 A Tcase = 100oC 5356 A Tcase = 100oC 4260 A CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load 6654 A - 10452 A - 9275 A Half wave resistive load 4227 A - 6640 A - 5403 A Tcase = 100oC unless otherwise stated
www.dynexsemi.com DS2102SY THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W- 0.019Anode dc Clamping force 43.0kN with mounting compoundThermal resistance - case to heatsinkR th(c-h) 0.002Double side - 175 oC Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side Thermal resistance - junction to caseR th(j-c) Single side cooled Symbol Parameter Clamping force 38.0 47.0 kN -55 175 oC Forward (conducting) 200 oC - 0.004 oC/W oC/W Cathode dc - 0.019 oC/W Double side cooled - 0.0095 oC/W SURGE RATINGS Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase =175oC VR = 0 Max. UnitsSymbol Parameter IFSM Surge (non-repetitive) forward current I2tI 2t for fusing IFSM Surge (non-repetitive) forward current I2t I2t for fusing A2s 100.0 kA 32 x 106 A2s 80.0 kA 50 x 106
www.dynexsemi.com DS2102SY CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves VFM Equation:- VFM = A + Bln (IF) + C.IF+D.√IF Where A = 0.402091 B = 0.011718 C = 6.48 x 10 D = 0.005977 these values are valid for Tj = 125˚C for IF 500A to 10000A CHARACTERISTICS Forward voltage Peak reverse current Parameter µC2600Q S Total stored charge IF = 2000A, dIRR /dt = 3A/µs Tcase = 175˚C, VR = 100V Symbol VFM IRM At VRRM , Tcase = 175oC - 100 mA - 1.0 VAt 3000A peak, Tcase = 25oC Conditions Min. Max. Units At Tvj = 175˚C - Irr Peak reverse recovery current VTO Threshold voltage rT Slope resistance 0.0415 m Ω At Tvj = 175˚C - 0.75 V - 120 A 0.4 0.6 0.8 1.0 Instantaneous forward voltage, VF - (V) 2000 4000 6000 8000 10000Instantaneous forward current, IF - (A) Measured under pulse conditions Tj = 25˚C Tj = 175˚C 1.2 0 2000 4000 6000 8000 Mean forward current, IF(AV) - (A) 2000 4000 6000 8000 10000 12000Mean power dissipation - (W) 10000 dc Half wave 3 phase 6 phase
www.dynexsemi.com DS2102SY Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 175˚C) 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 100000 10000 1000 Stored charge, QS - (µC) Conditions: Tj = 175˚C VR = 100V IF = 2000A IRM IF dIF/dt Q S 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 Reverse recovery current Irr - (A) Conditions: Tj = 175˚C VR = 100V IF = 2000A 1 1 01 2 3 51 0 2 0 5 0 100 120 140 160 I2t value - (A2s x 106) ms Cycles at 50Hz Duration Peak half sine forward current - (kA) I2t = Î2 x t I2t 1010.10.010.001 Time - (s) 0.1 0.01 0.001
0.0001 Thermal impedance - (˚C/W)
d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Single side 0.019 0.020 0.0207 0.0234
www.dynexsemi.com DS2102SY Hole Ø 3.6 x 2.0 deep (One in each electrode) 37.7 36.0 Cathode Anode Ø 73 nom Ø 112.5 max Ø 73 nom Nominal weight: 1600g Clamping force: 50kN ±10% Package outine type code: Y PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Note: 1. Package maybe supplied with pins and/or tags.
www.dynexsemi.com DS2102SY POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4171-5 Issue No. 5.1 December 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.