DS1107SG DYNEX | Alldatasheet

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www.dynexsemi.com DS1107SG

FEATURES

APPLICATIONS

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1107SG40 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. KEY PARAMETERS VRRM 4000V IF(AV) 1121A IFSM 15000A DS1107SG Rectifier Diode Replaces January 2000 version, DS4168-3.0 DS4168-4.0 August 2001 4000 3900 3800 3700 3600 3500 DS1107SG40 DS1107SG39 DS1107SG38 DS1107SG37 DS1107SG36 DS1107SG35 Conditions V RSM = VRRM + 100V Lower voltage grades available. Type Number Repetitive Peak Reverse Voltage VRRM V Outline type code: G See Package Details for further information. Fig. 1 Package outline

www.dynexsemi.com DS1107SG Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load 870 A - 1366 A - 1280 A Half wave resistive load 550 A - 863 A - 740 A CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value IF Continuous (direct) forward current UnitsMax. Half wave resistive load 1121 A - 1761 A - 1608 A Half wave resistive load 734 A - 1154 A - 989 A Tcase = 100oC unless otherwise stated

www.dynexsemi.com DS1107SG SURGE RATINGS Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. UnitsSymbol Parameter IFSM Surge (non-repetitive) forward current I2tI 2t for fusing IFSM Surge (non-repetitive) forward current I2t I2t for fusing A2s 15.0 kA 0.72x 106 A2s 12.0 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W- 0.064Anode dc Clamping force 12.0kN with mounting compoundThermal resistance - case to heatsinkR th(c-h) 0.008Double side - 150 oC Tvj Virtual junction temperature Tstg Storage temperature range Reverse (blocking) Single side Thermal resistance - junction to caseR th(j-c) Single side cooled Symbol Parameter -55 175 oC Forward (conducting) - 160 oC - 0.016 oC/W oC/W Cathode dc - 0.064 oC/W Double side cooled - 0.032 oC/W 1.125 x 106 Clamping force- 11.5 13.5 kN

www.dynexsemi.com DS1107SG CHARACTERISTICS Forward voltage Peak reverse current Parameter µC2000 At Tvj = 150˚C - Q S Total stored charge IF = 1000A, dIRR /dt = 3A/µs Tcase = 150˚C, VR = 100V Symbol VFM IRM Irr Reverse recovery current VTO Threshold voltage rT Slope resistance 0.44 m Ω At Tvj = 150˚C - 0.75 V -8 0A At VRRM , Tcase = 150oC- 5 0 m A - 1.6 VAt 1800A peak, Tcase = 25oC Conditions Min. Max. Units CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves VFM Equation:- VFM = A + Bln (IF) + C.IF+D.√IF Where A = 0.616461 B = –0.01452 C = 0.000349 D = 0.009952 these values are valid for T j = 125˚C for IF 500A to 2500A 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 500 1000 1500 2000 2500Instantaneous forward current, IF - (A) Measured under pulse conditions Tj = 25˚C Tj = 150˚C 0 500 1000 1500 2000 Mean forward current, IF(AV) - (A) 500 1000 1500 2000 2500Mean power dissipation - (W) dc Half wave 3 phase 6 phase

www.dynexsemi.com DS1107SG Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.6 Surge (non-repetitive) forward current vs time (with 50% V RRM at Tcase 150˚C) 0.1 0.01

0.001 Thermal Impedance - junction to case, Rth(j–c) - (˚C/W)

0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 0.1 1.0 10 100 Rate of decay of on-state current, dIF/dt - (A/µs) 10000 1000 100 Stored charge, QS - (µC) Conditions: Tj = 150˚C VR = 100V IF = 1000A IRM IF dIF/dt Q S 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 Reverse recovery current, Irr - (A) Conditions: Tj = 150˚C VR = 100V IF = 1000A 11 0 1 2 3 5 1 0 2 0 5 0 500 550 450 600 650 I2t value - (A2s x 103) ms Cycles at 50Hz Duration Peak half sine forward current - (kA) I2t = Î2 x t 700 750 I2t

www.dynexsemi.com DS1107SG Hole Ø 3.6 x 2.0 deep (in both electrodes) Ø 34 nom 27.0 25.4 Cathode AnodeØ 34 nom Ø 58.5 max Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Note: 1. Package maybe supplied with pins and/or tags.

www.dynexsemi.com DS1107SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4168-4 Issue No. 4.0 August 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.