DRD3080V50

DRD3080V50 DYNEX | Alldatasheet

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Technical content

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FEATURES

 Double Side Cooling  High Surge Capability VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V Conditions DRD3080V50 DRD3080V48 DRD3080V46 DRD3080V44 5000 4800 4600 4400 VRSM = VRRM+100V Lower voltage grades available.

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DRD3080V48 for a 4800V device Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. KEY PARAMETERS VRRM 5000V IF(AV) 3083A IFSM 55000A Outline type code: V (See Package Details for further information) Fig. 1 Package outline DRD3080V50 Rectifier Diode DS6075 May 2012 (LN29547)

www.dynexsemi.com CURRENT RATINGS Tcase = 75°C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load 3972 A IF(RMS) RMS value - 6239 A IF Continuous (direct) on-state current - 5973 A Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load 2926 A IF(RMS) RMS value - 4596 A IF Continuous (direct) on-state current - 4066 A Tcase = 100°C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load 3083 A IF(RMS) RMS value - 4843 A IF Continuous (direct) on-state current - 4538 A Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load 2033 A IF(RMS) RMS value - 3193 A IF Continuous (direct) on-state current - 2748 A

• 3 - SEMICONDUCTOR DRD3080V50 www.dynexsemi.com SURGE RATINGS Symbol Parameter Test Conditions Max. Units IFSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 150°C 44 kA I2t I2t for fusing VR = 50% VRRM - ¼ sine 9.68 MA2s IFSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 150°C 55 kA I2t I2t for fusing VR = 0 15.12 MA2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.0075 °C/W Single side cooled Anode DC - 0.015 °C/W Cathode DC - 0.015 °C/W Rth(c-h) Thermal resistance – case to heatsink Clamping force 43kN Double side - 0.002 °C/W (with mounting compound) Single side - 0.004 °C/W Tvj Virtual junction temperature On-state (conducting) - 160 °C Reverse (blocking) - 150 °C Tstg Storage temperature range -55 150 °C Fm Clamping force 38.0 47.0 kN

www.dynexsemi.com CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.25 V IRM Peak reverse current At VDRM, Tcase = 150°C - 100 mA QS Total stored charge IF = 2000A, dIRR/dt =4A/µs - 7500 µC Irr Peak reverse recovery current Tcase = 150°C, VR =100V - 190 A VTO Threshold voltage At Tvj = 150°C - 0.82 V rT Slope resistance At Tvj = 150°C - 0.143 m CURVES Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves VTM EQUATION Where A = - 0.630059 B = 0.2338835 VTM = A + Bln (IT) + C.IT+D.IT C = 0.000166 D = - 0.009367 these values are valid for Tj = 150°C for IF 1000A to 11000A 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 Instantaneous Forward Current, IFM - (A) Instantaneous Forward Voltage , VFM - ( V ) 25ºC 150ºC 1000 2000 3000 4000 5000 6000 7000 8000 0 1000 2000 3000 4000 5000 6000 Mean Power Dissipation (W) Mean on-state Current (A) dc 180sine 120 square 60 square 30 square

• 5 - SEMICONDUCTOR DRD3080V50 www.dynexsemi.com Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.6 Maximum (limit) transient thermal impedance- junction to case 5000 10000 15000 20000 25000 0 50 100 150 Stored Charge, QS - (uC) Rate of decay of forward current, diF/dt - (A/us) Conditions: IF = 2000A VR = 100V Tj = 150oC QS max = 4789.7*(di/dt)0.3197 QS min = 2771.5*(di/dt)0.3717 200 400 600 800 1000 1200 1400 0 50 100 150 Reverse recovery current , IRR - (A) Rate of decay of forward current, dIF/dt - (A/us) Conditions: IF = 2000A VR = 100V Tj = 150oC IRR max = 81.792*(di/dt)0.5963 IRR min = 50.733*(di/dt)0.6536

www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Normal weight: 1100g Clamping force: 43kN±10% Package outline type code:V Note: Some packages may be supplied with gate and or tags.

• 7 - SEMICONDUCTOR DRD3080V50 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning r equirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. The products must not be touc hed when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate ap plication design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless othe rwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com CUSTOMER SERVICE Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: power_solutions@dynexsemi.com  Dynex Semiconductor Ltd. Technical Documentation – Not for resale.