DIM400DCM17-A000_15 DYNEX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Replaces DS5490-4 DS5490-5 March 2011 (LN28169) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8 www.dynexsemi.com

FEATURES

 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon  Isolated AlSiC Base with AlN Substrates  Lead Free Construction

APPLICATIONS

 High Reliability Inverters  Motor Controllers  Traction Drives The Powerline ra nge of high power modules includes half bridge, chopper, dual, single and bi -directional switch configurations covering voltages from 600V to 6500V and currents up to 2400A. The DIM 400DCM17-A000 is a 17 00V, n -channel enhancement mode, insulated gate bipol ar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As: DIM400DCM17-A000 Note: When ordering, please use the complete part number KEY PARAMETERS VCES 1700V VCE(sat) * (typ) 2.7V IC (max) 400A IC(PK) (max) 800A * Measured at the power busbars, not the auxiliary terminals 4 x M8 screwing depth max 16 screwing depth max 8 6 x O7 130 ±0.5 114 ±0.1 57 ±0.25 57 ±0.25 124 ±0.25 140 ±0.5 30 ±0.2 16 ±0.2 53 ±0.2 40 ±0.2 5 ±0.2 29.2 ±0.5 5.25 ±0.3 35 ±0.211.5 ±0.2 14 ±0.2 55.2 ±0.3 11.85 ±0.2 +1.5 -0.0 7(C) 1(E) 3(C) 5(E)5(E) 6(G) 2(C) 4(E) 3 x M4 20 ±0.1 28 ±0.5 Fig. 1 Circuit configuration Outline type code: D (See Fig. 11 for further information) Fig. 2 Package

2/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentiall y hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 1700 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase = 75°C 400 A IC(PK) Peak collector current 1ms, Tcase = 110°C 800 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 3470 W I2t Diode I2t value (IGBT arm) VR = 0, tp = 10ms, Tj = 125ºC 30 kA2s Diode I2t value (Diode arm) 120 kA2s Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V QPD Partial discharge – per module IEC1287, V1 = 1800V, V2 = 1300V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Comparative Tracking Index): 350 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance – transistor (per arm) Continuous dissipation – junction to case - - 36 °C/kW Rth(j-c) Thermal resistance – diode (IGBT arm) Continuous dissipation – junction to case - - 80 °C/kW Thermal resistance – diode (Diode arm) 40 °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 8 °C/kW Tj Junction temperature Transistor - - 150 °C Diode - - 125 °C Tstg Storage temperature range - -40 - 125 °C Screw torque Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 12 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 2 μA VGE(TH) Gate threshold voltage IC = 20mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) † Collector-emitter saturation voltage VGE = 15V, IC = 400A 2.7 3.2 V VGE = 15V, IC = 400A, Tj = 125°C 3.4 4.0 V IF Diode forward current DC 400 A IFM Diode maximum forward current tp = 1ms 800 A VF Diode forward voltage (IGBT arm) IF = 400A 2.2 2.5 V Diode forward voltage (Diode arm) 1.8 2.1 V Diode forward voltage (IGBT arm) IF = 400A, Tj = 125°C 2.3 2.6 V Diode forward voltage (Diode arm) 1.8 2.1 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 30 nF Qg Gate charge ±15V 4.5 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 2.5 nF LM Module inductance – per arm 20 nH RINT Internal transistor resistance – per arm 270 μ SCData Short circuit current, ISC Tj = 125°C, VCC = 1000V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x dI/dt IEC 60747-9 1600 A Note: † Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + LM

4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 400A VGE = ±15V VCE = 900V RG(ON) = 4.7 RG(OFF) = 4.7 LS ~ 100nH 1150 ns tf Fall time 100 ns EOFF Turn-off energy loss 120 mJ td(on) Turn-on delay time 250 ns tr Rise time 250 ns EON Turn-on energy loss 150 mJ Qrr Diode reverse recovery charge IGBT arm IF = 400A VCE = 900V dIF/dt = 2000A/μs 100 μC Irr Diode reverse recovery current 230 A Erec Diode reverse recovery energy 70 mJ Qrr Diode reverse recovery charge Diode arm IF = 400A VCE = 900V dIF/dt = 2000A/μs 130 μC Irr Diode reverse recovery current 300 A Erec Diode reverse recovery energy 90 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 400A VGE = ±15V VCE = 900V RG(ON) = 4.7 RG(OFF) = 4.7 LS ~ 100nH 1400 ns tf Fall time 130 ns EOFF Turn-off energy loss 180 mJ td(on) Turn-on delay time 400 ns tr Rise time 250 ns EON Turn-on energy loss 170 mJ Qrr Diode reverse recovery charge IGBT arm IF = 400A VCE = 900V dIF/dt = 2000A/μs 170 μC Irr Diode reverse recovery current 270 A Erec Diode reverse recovery energy 100 mJ Qrr Diode reverse recovery charge Diode arm IF = 400A VCE = 900V dIF/dt = 2000A/μs 220 μC Irr Diode reverse recovery current 350 A Erec Diode reverse recovery energy 130 mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance

6/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 4 x M8 screwing depth max 16 screwing depth max 8 6 x M4 130±0.5 124 ±0.25 30 ±0.2 16 ±0.2 18 ±0.2 29.2 ±0.5 5.25±0.314 ±0.2 57 ±0.25 57 ±0.25 114 ±0.1 40 ±0.2 44 ±0.2 53 ±0.2 57 ±0.2 11.85 ±0.2 55.2 ±0.3 +1.5 -0.0 35 ±0.211.5 ±0.2 7(C) 1(E) 2(C) 3(C) 4(E) 5(E)5(E) 6(G) 6 x Ø7 140 ±0.5 Nominal Weight: 900g Module Outline Type Code: D Fig. 11 Module outline drawing

8/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selectio n and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccura cies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prev ent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may aff ect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current t o flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right han d corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for vo lume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Fax: +44(0)1522 500550 Fax: +44(0)1522 500020 Tel: +44(0)1522 500500 Tel: +44(0)1522 502753 / 502901 Web: http://www.dynexsemi.com Email: Power_solutions@dynexsemi.com  Dynex Semiconductor Ltd. 2001. Technical Documentation – Not for resale.