DIM200WKS12-A000_09 DYNEX | Alldatasheet

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Technical content

IGBT Chopper Module – Upper Arm Control DS5969-3.2 January 2009 (LN26554) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8 www.dynexsemi.com

FEATURES

/G1 Non Punch Through Silicon /G1 Isolated Copper Baseplate /G1 10 /G2s Short Circuit Withstand /G1 Lead Free construction

APPLICATIONS

/G1 High Power Inverters /G1 Motor Drives /G1 UPS Systems The Powerline range of high power modules includes half bridge, chopper, dual, single and bi- directional switch configurations covering voltages from 1200V to 3300V and currents up to 3600A. The DIM200WKS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10/G2s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As: DIM200WKS12-A000 Note: When ordering, please use the whole part number. KEY PARAMETERS VCES 1200V VCE (sat) * (typ) 2.2 V IC (max) 200A IC(PK) (max) 400A *(Measured at the power busbars and not the auxiliary terminals) 3(C1)1(K,E) 2(A ) 5(E1) 4(G1) Fig. 1 Chopper circuit diagram Outline type code: W (See package details for further information) Fig. 2 Module outline

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 2/8 www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of t he package. Appropriate safety precautions should alw ays be followed. Exposure to Absolute Maximum Rati ngs may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage V GE = 0V 1200 V VGES Gate-emitter voltage ±20 V IC Continuous collector current T case = 80° C 200 A IC(PK) Peak collector current 1ms, T case =115° C 400 A Pmax Max. transistor power dissipation T case = 25° C, Tj = 150° C 1390 W I2t Diode I 2t value (IGBT arm) V R = 0, tP = 10ms, Tvj = 125° C 6.25 kA 2S Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min,50Hz 2500 V THERMAL AND MECHANICAL RATINGS Internal insulation material: Al 2O3 Baseplate material: Copper Creepage distance: 24mm Clearance: 13mm CTI (Critical Tracking Index): 175 Symbol Parameter Test Conditions Min. Typ. Max. Units Rth(j-c) Thermal resistance – transistor (per arm) Continuous dissipation – junction to case - - 90 ° C/kW Rth(j-c) Thermal resistance – diode (per arm) Continuous dissipation – junction to case - - 194 ° C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 15 ° C/kW Tj Junction temperature Transistor - - 150 ° C Diode - - 125 ° C Tstg Storage temperature range - -40 - 125 ° C - Screw torque Mounting – M6 3 - 5 Nm Electrical connections – M6 2.5 - 5 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com

ELECTRICAL CHARACTERISTICS

Tcase = 25° C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units ICES Collector cut-off current V GE = 0V, VCE = VCES - - 0.25 mA (IGBT and Diode arm) VGE = 0V, VCE = VCES, Tcase = 125° C - - 6 mA IGES Gate leakage current V GE = ±20V, VCE = 0V - - 1 µA VGE(TH) Gate threshold voltage I C = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) /c1 Collector-emitter saturation voltage V GE = 15V, IC = 200A - 2.2 2.7 V VGE = 15V, IC = 200A, Tcase = 125° C - 2.6 3.1 V IF Diode forward current DC - - 200 A IFM Diode maximum forward current t p = 1ms - - 400 A VF /c1 Diode forward voltage I F = 200A - 2.2 2.5 V (IGBT and Diode arm) IF = 200A, Tcase = 125° C - 2.3 2.6 V Cies Input capacitance V CE = 25V, VGE = 0V, f = 1MHz - 33 - nF LM Module inductance per arm - - 20 - nH RINT Internal resistance per arm - - 0.23 - m/G1 SCData Short circuit. Isc Tj = 125° C, Vcc = 900V, I 1 - 1375 - A tp /G2 10µs, Vge /G2 15V VCE(max) = VCES - L*.di/dt I2 - 1125 - A IEC 60747-9 Note: /G3 Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 4/8 www.dynexsemi.com Tcase = 25° C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units td(off) Turn-off delay time I C = 200A - 600 - ns tf Fall time VGE = ±15V - 50 - ns EOFF Turn-off energy loss V CE = 600V - 20 - mJ td(on) Turn-on delay time RG(ON) = 4.7/G1 RG(OFF) =4.7 /G1 - 240 - ns tr Rise time L /G2 70nH - 95 - ns EON Turn-on energy loss - 25 - mJ Qg Gate charge - 2 - µC Qrr Diode reverse recovery charge I F = 200A, VR = 600V, - 30 - µC Irr Diode reverse current dl F/dt = 2300A/µs - 150 - A EREC Diode reverse recovery energy - 13 - mJ Tcase = 125° C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units td(off) Turn-off delay time I C = 200A - 800 - ns tf Fall time VGE = ±15V - 70 - ns EOFF Turn-off energy loss V CE = 600V - 27 - mJ td(on) Turn-on delay time RG(ON) =4.7 /G1 RG(OFF) = 4.7 /G1 - 385 - ns tr Rise time L /G2 70nH - 110 - ns EON Turn-on energy loss - 40 - mJ Qrr Diode reverse recovery charge I F = 200A, VR = 600V, - 50 - µC Irr Diode reverse current dl F/dt = 2000A/µs - 160 - A EREC Diode reverse recovery energy - 20 - mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/8 www.dynexsemi.com 100 150 200 250 300 350 400 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) VGE = 10V VGE = 12V VGE = 15V VGE = 20V Common emitter T case = 25° C Vce is measured at power busbars and not the auxiliary terminals 100 150 200 250 300 350 400 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) VGE = 10V VGE = 12V VGE = 15V VGE = 20V Common emitter Tcase = 125° C Vce is measured at power busbars and not the auxiliary terminals Fig.3 Typical output characteristics Fig.4 Typical output characteristics 0 50 100 150 200 Collector current, IC - (A) Switching energy, Esw - (mJ) Eon Eoff Erec Tc = 125° C, Vcc = 600V, Rg = 4.7 Ohms 4 10 12 Gate resistance, Rg - (Ohms) Switching energy, Esw - (mJ) Eon Eoff Erec Tc = 125° C, Vcc = 600V, IC = 200A Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 6/8 www.dynexsemi.com 100 150 200 250 300 350 400 Forward voltage, VF - (V) Forward current, IF - (A) T j = 25° C T j = 125° C VF is measured at power busbars and not the auxiliary terminals 100 150 200 250 300 350 400 450 0 200 400 600 800 1000 1200 1400 Collector emitter voltage, Vce - (V) Collector current, IC - (A) Tcase = 125° C Vge = 15V Rg = 4.7 Ohms Module IC Chip IC Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 Reverse voltage, VR - (V) Reverse recovery current, Irr - (A) Tcase =125° C 100 1000 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Transient thermal impedance, Zth (j-c) - (° C/kW ) Diode Transistor IGBT R i (°C/KW) t i (ms) Diode R i (°C/KW) t i (ms) 2.10 0.11 4.49 0.10 11.62 3.14 25.28 3.21 43.85 45.60 74.24 38.58 29.53 143.02 90.03 113.97 Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/8 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3(C1)1(K,E) 2(A ) 5(E1) 4(G1) Nominal weight: 420g Module outline type code: W Fig.11 Package details

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 8/8 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. The Assembly group offers high quality engineering support dedicated to designing new unit s to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power As sembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semic onductors. Data with respect to air natural, force d air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 /G1 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only wh ich (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. No warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. The Company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. Inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. All products and materials ar e sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.