DIM1500ESM33-RR500 DYNEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
DS6446-1 July 2024 (LN43468) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/10 www.dynexsemi.com
FEATURES
- 10µs Short Circuit Withstand
- High Thermal Cycling Capability
- High Current Density Enhanced DMOS
- Isolated AlSiC Base With AlN Substrates
- Low Switching Loss Device
APPLICATIONS
- High Reliability Inverters
- Motor Controllers
- Smart Grid
- Traction Drives The Powerline range of high -power modules includes half bridge, chopper, dual, single and bi -directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM1500ESM33-RR500 is a single switch 3300V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As: DIM1500ESM33-RR500 Note: When ordering, please use the complete part number KEY PARAMETERS VCES 3300V VCE(sat) * (typ) 2.6V IC (max) 1500A IC(PK) (max) 3000A * Measured at the auxiliary terminals Fig. 1 Circuit configuration Outline type code: E (See Fig. 11 for further information) Fig. 2 Package 5(C) 4(E) 2(G) 1(E) 3(C) 8(E) 6(E) 7(C) 9(C)
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 3300 V VGES Gate-emitter voltage ±20 V IC Continuous collector current Tcase = 95°C 1500 A IC(PK) Peak collector current 1ms, 3000 A Pmax Max. transistor power dissipation Tcase = 25°C, Tj = 150°C 14.8 kW I2t Diode I2t value VR = 0, tp = 10ms, Tj = 150°C 720 kA2s Visol Isolation voltage – per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge – per module IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance – terminal to heatsink: 33mm Creepage distance – terminal to terminal: 34mm Clearance – terminal to heatsink: 20mm Clearance – terminal to terminal: 20mm CTI (Comparative Tracking Index): >600 Symbol Parameter Test Conditions Min Typ. Max Units Rth(j-c) Thermal resistance – transistor Continuous dissipation - junction to case - - 8.4 °C/kW Rth(j-c) Thermal resistance – diode Continuous dissipation - junction to case - - 12.8 °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease, 1W/mK) - 6 - °C/kW Tj Junction temperature Transistor -40 - 150 °C Diode -40 - 150 °C Tstg Storage temperature range - -40 - 150 °C Screw torque Mounting – M6 - - 5 Nm Electrical connections – M4 - - 2 Nm Electrical connections – M8 - - 10 Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/10 www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 1 mA VGE = 0V, VCE = VCES, Tcase = 125°C 90 mA VGE = 0V, VCE = VCES, Tcase = 150°C 150 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 1 μA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 5.40 6.00 6.60 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 1500A 2.60 3.00 V VGE = 15V, IC = 1500A, Tj = 125°C 3.15 V VGE = 15V, IC = 1500A, Tj = 150°C 3.30 V IF Diode forward current DC 1500 A IFM Diode maximum forward current tp = 1ms 3000 A VF Diode forward voltage IF = 1500A 2.00 2.40 V IF = 1500A, Tj = 125°C 2.15 V IF = 1500A, Tj = 150°C 2.15 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 100kHz 158 nF Qg Gate charge ±15V 14 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 100kHz 3.7 nF LsCE Module stray inductance 5 nH RCC’+EE’ Module lead resistance, terminal - chip 140 μ SCData Short circuit current, ISC Tj = 150°C, VCC = 2500V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L* x di/dt IEC 60747-9 6700 A Note: * L is the circuit inductance + LM
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1500A VGE = ±15V VCE = 1800V Rg(ON) = 1.0 Rg(OFF) = 1.5 CGE = 330nF LS ~ 180nH 2450 ns tf Fall time 1300 ns EOFF Turn-off energy loss 2365 mJ td(on) Turn-on delay time 550 ns tr Rise time 355 ns EON Turn-on energy loss 1360 mJ Qrr Diode reverse recovery charge IF = 1500A VCE = 1800V 1130 μC Irr Diode reverse recovery current 1460 A Erec Diode reverse recovery energy 1490 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1500A VGE = ±15V VCE = 1800V Rg(ON) = 1.0 Rg(OFF) = 1.5 CGE = 330nF LS ~ 180nH 2530 ns tf Fall time 2050 ns EOFF Turn-off energy loss 2930 mJ td(on) Turn-on delay time 585 ns tr Rise time 363 ns EON Turn-on energy loss 1730 mJ Qrr Diode reverse recovery charge IF = 1500A VCE = 1800V 1700 μC Irr Diode reverse recovery current 1580 A Erec Diode reverse recovery energy 2310 mJ Tcase = 150°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 1500A VGE = ±15V VCE = 1800V Rg(ON) = 1.0 Rg(OFF) = 1.5 CGE = 330nF LS ~ 180nH dv/dt = 4700V/µs 2550 ns tf Fall time 2260 ns EOFF Turn-off energy loss 3100 mJ td(on) Turn-on delay time di/dt = 3700A/µs 585 ns tr Rise time 370 ns EON Turn-on energy loss 2000 mJ Qrr Diode reverse recovery charge IF = 1500A VCE = 1800V dIF/dt = 3700A/μs 1950 μC Irr Diode reverse recovery current 1660 A Erec Diode reverse recovery energy 2700 mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/10 www.dynexsemi.com Fig. 3 Typical IGBT output characteristics Fig. 4 Typical IGBT output characteristics Fig. 5 Typical IGBT output characteristics, IC = f(VCE) Fig. 6 Typical IGBT transfer characteristics, IC = f(VGE) Collector - emitter voltage, Vce - (V) Collector current, Ic - (A) 0 1 2 3 4 5 500 1000 1500 2000 2500 3000 Tvj = 25C VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V Collector - emitter voltage, Vce - (V) Collector current, Ic - (A) 0 1 2 3 4 5 6 500 1000 1500 2000 2500 3000 Tvj = 150C VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V Collector - emitter voltage, Vce - (V) Collector current, Ic - (A) 0 1 2 3 4 5 6 500 1000 1500 2000 2500 3000 VGE = 15V 25C 125C 150C Gate - emitter voltage, VGE - (V) Collector current, IC - (A) 5 6 7 8 9 10 11 12 13 14 500 1000 1500 2000 2500 3000 VCE = 20V 25C 125C 150C
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 7 Typical IGBT switching energy, EON = f(IC), EOFF = f(IC) Fig. 8 Typical IGBT switching energy EON = f(RG), EOFF = fRG) Fig. 9 Typical FRD Erec, Erec = f(IF) Fig. 10 Typical FRD Erec, Erec = f(RG) Collector current, IC - (A) Switching energy, ESW - (mJ) 0 500 1000 1500 2000 2500 3000 1000 2000 3000 4000 5000 6000 7000 8000 VCE = 1800V VGE = 15V RG(ON) = 1.0 RG(OFF) = 1.5 CGE = 330nF EON, Tvj = 125C EON, Tvj = 150C EOFF, Tvj = 125C EOFF, Tvj = 150C Gate resistance, RG - () Switching energy, ESW - (mJ) 0 2 4 6 8 10 12 14 2000 4000 6000 8000 10000 12000 14000 16000 VCE = 1800V VGE = 15V CGE = 330nF IF = 1500A EON, Tvj = 125C EON, Tvj = 150C EOFF, Tvj = 125C EOFF, Tvj = 150C Forward current, IF - (A) Reverse recovery energy of FRD, Erec - [mJ] 0 500 1000 1500 2000 2500 3000 500 1000 1500 2000 2500 3000 3500 VCE = 1800V VGE = 15V RG(ON) = 1.0 CGE = 330nF Erec, Tvj = 125C Erec, Tvj = 150C Gate resistance, RG - () Reverse recovery energy of FRD, Erec - [mJ] 0 3 6 9 12 15 500 1000 1500 2000 2500 3000 VCE = 1800V VGE = 15V CGE = 330nF IF = 1500A Erec,Tvj = 125C Erec,Tvj = 150C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/10 www.dynexsemi.com Fig. 11 Typical FRD output characteristics, IF = f(VF) Fig. 12 Reverse bias safe operating area of IGBT, IC = f(VCE) Fig. 13 Diode reverse bias safe operating area Fig. 14 Transient thermal impedance, Zth(J-C) = f(t) Forward voltage, VF - (V) Forward current, IF - (A) 0 0.5 1 1.5 2 2.5 3 3.5 500 1000 1500 2000 2500 3000 25C 125C 150C Collector - emitter voltage, Vce - (V) Collector current, Ic - (A) 0 600 1200 1800 2400 3000 3600 500 1000 1500 2000 2500 3000 3500 Tvj = 150C RG(OFF) = 1.5 CGE = 330nF VGE = 15V IC-chip IC-module Reverse voltage of FRD, VR - (V) Reverse recovery current of FRD, Irr - (A) 0 600 1200 1800 2400 3000 3600 600 1200 1800 2400 3000 3600 Tvj = 150C Pulse width, tp - (s) Transient thermal impedance, ZTh (J-C) - (K/kW) 0.001 0.01 0.1 1 10 0.1 100 IGBT R i(K/kW) 1.34 2.28 4.74 0.04 i(ms) 3.51 37.8 263 1923 Diode R i(K/kW) 2.14 4.16 6.43 0.07 i(ms) 3.46 37.8 246 1469 Zth IGBT Zth Diode
8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 15 Typical capacitor characteristic, C = f (VCE) Fig. 16 Typical gate charge characteristic, VGE = f (QG) Collector - emitter voltage, Vce - (V) Capacitance, C - (nF) 0 20 40 60 80 100 100 500 Cies-158nF Coes-16.9nF Cres-3.73nF Cies Coes Cres Gate charge, QG - (C) Gate - emitter voltage, VGE - (V) 0 2 4 6 8 10 12 14 -15 -10 14uC
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 9/10 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal Weight: 1100g Module Outline Type Code: E Fig. 17 Module outline drawing
10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the produc t and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate pr oduct status if it is not yet fully approved for production. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product design is complete and final characterisation for vo lume production is in progress. The datasheet represents the product as it is now understood but details may change. No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and servic es provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln, Lincolnshire, LN6 3LF, United Kingdom Tel: +44(0)1522 500500 Tel: +44(0)1522 502753 / 502901 Web: http://www.dynexsemi.com Email: powersolutions@dynexsemi.com Dynex Semiconductor Ltd. 2024 Technical Documentation – Not for resale.