DGT408BRP DYNEX | Alldatasheet
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www.dynexsemi.com
FEATURES
I Reverse Blocking Capability I Double Side Cooling I High Reliability In Service I High Voltage Capability I Fault Protection Without Fuses I High Surge Current Capability I Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
APPLICATIONS
I Variable speed A.C. motor drive inverters (VSD-AC) I Uninterruptable Power Supplies I High Voltage Converters I Choppers I Welding I Induction Heating I DC/DC Converters. KEY PARAMETERS ITCM 800A VDRM /VRRM 4500V dV D /dt 1000V/ µs diT/dt 300A/ µs VOLTAGE RATINGS 4500DGT408BRP4540 ConditionsType Number Tvj = 115oC, IDM = 50mA, IRRM = 50mA Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V 4500 CURRENT RATINGS Symbol Parameter Conditions Max. ITCM THS = 80oC. Double side cooled. Half sine 50Hz. VD = VDRM , Tj = 115oC, diGQ /dt = 30A/µs, Cs = 2.0µF RMS on-state current A A A800 Units Repetitive peak controllable on-state current THS = 80oC. Double side cooled. Half sine 50Hz. IT(RMS) IT(AV) Mean on-state current DGT408BRP Reverse Blocking Gate Turn-off Thyristor Target Information DS4415-2.1 February 2002 Fig. 1 Package outline Outline type code: P (See Package Details for further information)
www.dynexsemi.com SURGE RATINGS Conditions 6.0 0.18 x 106 kA A2s Surge (non-repetitive) on-state current I 2t for fusing 10ms half sine. Tj = 115oC 10ms half sine. Tj =115oC diT/dt Critical rate of rise of on-state current 300 -V / µs Max. Units Rate of rise of off-state voltagedVD /dt
1000 V/ µsTo 66% VDRM ; VRG = -2V, Tj = 115oC
VD = 3000V, IT = 800A, Tj = 115oC, IFG > 30A, Rise time > 1.5µs A/µs To 66% VDRM ; RGK ≤ 1.5Ω , Tj = 115oC GATE RATINGS Symbol Parameter Conditions V UnitsMax. Min. -Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time -20 - µs100 VRGM This value maybe exceeded during turn-off IFGM PFG(AV) PRGM diGQ /dt tON(min) tOFF(min) µs A/µs kW W A THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max.Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.1 - 0.009 oC/W per contact Cathode side cooled Double side cooled Units - 0.041 oC/W Anode side cooled oC/W0.07 Virtual junction temperature TOP /Tstg Operating junction/storage temperature range - Clamping force 125 15.011.0 -40 kN oC/WClamping force 12.0kN With mounting compound DC thermal resistance - junction to heatsink surface Tvj 125 oC oC -LS Peak stray inductance in snubber circuit 200 nH
www.dynexsemi.com CHARACTERISTICS Tj = 115oC unless stated otherwise Conditions Peak reverse current On-state voltageVTM Peak off-state current Reverse gate cathode current 50- Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current VRGM = 16V, No gate/cathode resistor µC IT = 800A, VDM = 3000V Snubber Cap Cs = 2.0µF, diGQ /dt = 30A/µs Symbol Parameter IDM IRRM VGT Gate trigger voltage IGT IRGM EON td tr EOFF tgs tgf tgq Q GQ Q GQT IGQM Min. Max. Units - 4.7 V VDRM = 4500V, VRG = 0V - 50 mA At VRRM -5 0 m A VD = 24V, IT = 100A, Tj = 25oC - 1.0 V VD = 24V, IT = 100A, Tj = 25oC - 1.5 A mA mJ1200-VD = 3000V IT = 800A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.5µs µs1.5- - 5.0 µs - 3000 mJ - 15.0 µs µs1.5- µs15.5- -- µC - 850 A At 800A peak, IG(ON) = 4A d.c.
www.dynexsemi.com Anode voltage and current VD 0.9VD 0.1VD td tr tgt IT VDP 0.9IT ITAIL dVD /dt VD VDM Gate voltage and current tgs tgf tw1 VFG IFG 0.1IFG dIFG /dt 0.1IGQ Q GQ 0.5IGQM IGQM VRG V(RG)BR IG(ON) tgq Recommended gate conditions: ITCM = 800A IFG = 30A IG(ON) = 4A d.c. tw1(min) = 20µs IGQM = 300A diGQ /dt = 30A/µs Q GQ = VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted Fig.2 General switching waveforms
www.dynexsemi.com 20˚ Gate Ø38 nom Ø56 max Ø57.5 max Ø63.5 max Ø38 nom Ø51 nom Cathode Anode 27.0 25.5 18 nom 2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep Auxiliary cathode Nominal weight: 350g Clamping force: 12kN ±10% Lead length: 505mm Package outine type code: P Weight: 350g PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS4415-2 Issue No. 2.1 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.