DGT304RE DYNEX | Alldatasheet
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FEATURES
I Reverse Blocking Capability I Double Side Cooling I High Reliability In Service I High Voltage Capability I Fault Protection Without Fuses I High Surge Current Capability I Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
APPLICATIONS
I Variable speed A.C. motor drive inverters (VSD-AC) I Uninterruptable Power Supplies I High Voltage Converters I Choppers I Welding I Induction Heating I DC/DC Converters KEY PARAMETERS ITCM 700A VDR M /VRRM 1300V IT(AV) 250A dV D /dt 500V/ µs diT/dt 500A/ µs VOLTAGE RATINGS 1300DGT304RE13 ConditionsType Number Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V Repetitive Peak Reverse Voltage VRRM V 1300 DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-2.1 February 2002 Fig. 1 Package outline Outline type code: E (See Package Details for further information) Repetitive Peak Off-state Voltage VDRM V
www.dynexsemi.com SURGE RATINGS Conditions 4.0 80000 kA A2s Surge (non-repetitive) on-state current I 2t for fusing 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC diT/dt Critical rate of rise of on-state current 500
500 V/ µs
Max. Units Rate of rise of off-state voltagedVD /dt ITSM Symbol Parameter I2t VD = 60% VDRM , IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs A/µs To 80% VDRM ; RGK ≤ 1.5Ω , Tj = 125oC GATE RATINGS Symbol Parameter Conditions V UnitsMax. Min. -Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time -20 - µs40 VRGM This value maybe exceeded during turn-off IFGM PFG(AV) PRGM diGQ /dt tON(min) tOFF(min) µs A/µs kW W A CURRENT RATINGS Symbol Parameter Conditions Max. ITCM THS = 80oC. Double side cooled. Half sine 50Hz. VD = 60%VDRM , Tj = 125oC, diGQ /dt =15A/µs, Cs = 2.0µF RMS on-state current A A A700 250 390 Units Repetitive peak controllable on-state current THS = 80oC. Double side cooled. Half sine 50Hz. IT(RMS) IT(AV) Mean on-state current
www.dynexsemi.com CHARACTERISTICS THERMAL RATINGS Symbol Parameter Conditions Max.Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.20 - 0.018 oC/W per contact Cathode side cooled Double side cooled Units - 0.075 oC/W Anode side cooled oC/W0.12 Virtual junction temperature TOP /Tstg Operating junction/storage temperature range - Clamping force 125 6.05.0 -40 kN oC/WClamping force 5.5kN With mounting compound DC thermal resistance - junction to heatsink surface Tvj 125 oC oC Conditions Peak reverse current On-state voltageVTM Peak off-state current Reverse gate cathode current 50- Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge - 700 VRGM = 16V, No gate/cathode resistor µC IT =600A, VDM = 750V Snubber Cap Cs = 1.5µF, diGQ /dt = 15A/µs R L = (Residual inductance 3µH) Tj = 125oC unless stated otherwise Symbol Parameter IDM IRRM VGT Gate trigger voltage IGT IRGM EON td tr EOFF tgs tgf tgq Q GQ Q GQT Min. Max. Units - 2.2 V At = VDRM , VRG = 2V - 25 mA At VRRM -5 0 m A VD = 24V, IT = 100A, Tj = 25oC - 0.9 V VD = 24V, IT = 100A, Tj = 25oC - 1.0 A mA mJ130-VD = 900V, IT = 600A, dIT/dt = 300A/µs IFG = 20A, rise time < 1.0µs R L = (Residual inductance 3µH) µs1.5- - 3.0 µs - 350 mJ -1 0 µs µs11- µs0.9- - 1400 µC At 600A peak, IG(ON) = 2A d.c.
www.dynexsemi.com CURVES Fig.2 Gate characteristics Fig.4 Dependence of ITCM on CS Fig.3 Maximum (limit) on-state characteristics Fig.5 Maximum (limit) transient thermal resistance
www.dynexsemi.com Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Steady state rectangulerwave conduction loss - double side cooled
www.dynexsemi.com Fig.9 Turn-on energy vs on-state current Fig.10 Turn-on energy vs peak forward gate current Fig.8 Steady state sinusoidal wave conduction loss - double side cooled
www.dynexsemi.com Fig.11 Turn-on energy vs on-state current Fig.12 Turn-on energy vs peak forward gate current Fig.13 Turn-on energy vs rate of rise of on-state current Fig.14 Delay time and rise time vs on-state current
www.dynexsemi.com Fig.17 Turn-off energy vs rate of rise of reverse gate current Fig.18 Turn-off energy vs on-state current Fig.15 Delay time and rise time vs peak forward gate current Fig.16 Turn-off energy vs on-state current
www.dynexsemi.com Fig.19 Turn-off energy vs rate of rise of reverse gate currentFig.20 Turn-off energy vs on-state current with CS as parameter Fig.21 Storage time vs on-state current Fig.22 Storage time vs rate of rise of reverse gate current
www.dynexsemi.com Fig.25 Peak reverse gate current vs on-state currentFig.26 Peak reverse gate current vs rate of rise of reverse gate current Fig.23 Fall time vs on-state current Fig.24 Fall time vs rate of rise of reverse gate current
www.dynexsemi.com Fig.27 Turn-off gate charge vs on-state current Fig.28 Turn-off gate charge vs rate of rise of reverse gate current Fig.29 Dependence of critical dVD /dt on gate-cathode resistance and gate-cathode reverse voltage
www.dynexsemi.com Anode voltage and current VD 0.9VD 0.1VD td tr tgt IT VDP 0.9IT ITAIL dVD /dt VD VDM Gate voltage and current tgs tgf tw1 VFG IFG 0.1IFG dIFG /dt 0.1IGQ Q GQ 0.5IGQM IGQM VRG V(RG)BR IG(ON) tgq Fig.30 General switching waveforms Recommended gate conditions:- ITCM = 700A IFG = 20A dIFG /dt = 20A/µs IG(ON) = 2A d.c. tw1(min) = 4.5µs IGQM = 120A dIGQ /dt = 15A/µs Q GQ = 700µc VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode Anode Ø25nom. Ø42max Ø25nom. 30˚15˚ Gate Nominal weight: 82g Clamping force: 6kN ±10% Package outine type code: E Cathode tab ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V TO , rT on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177
www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5518-2 Issue No. 2.1 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.