DG858BW45 DYNEX | Alldatasheet
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Technical content
V
FEATURES
l High Reliability In Service l High Voltage Capability l Fault Protection Without Fuses l High Surge Current Capability l Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
APPLICATIONS
l Variable speed A.C. motor drive inverters (VSD-AC) l Uninterruptable Power Supplies l High Voltage Converters l Choppers l Welding l Induction Heating l DC/DC Converters KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 1180A dV D /dt 1000V/ µs diT/dt 300A/ µs Package outline type code: W. See Package Details for further information. VOLTAGE RATINGS 4500 ConditionsType Number Tvj = 125oC, IDM = 100mA, IRRM = 50mA Repetitive Peak Reverse Voltage VRRM V CURRENT RATINGS Symbol Parameter Conditions Max. ITCM THS = 80oC. Double side cooled, half sine 50Hz VD = 66% VDRM , Tj = 125oC, diGQ /dt = 40A/µs, Cs = 3µF RMS on-state current A A A3000 1180 1850 Units Repetitive peak controllable on-state current THS = 80oC. Double side cooled, half sine 50Hz IT(RMS) IT(AV) Mean on-state current Figure 1. Package outline
20.0 2.0 x 106 kA A2s Surge (non-repetitive) on-state current I 2t for fusing 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC diT/dt Critical rate of rise of on-state current 300
130 V/µs
Max. Units Rate of rise of off-state voltagedVD /dt
1000 V/ µsTo 66% VDRM ; VRG = -2V, Tj = 125oC
VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0µs A/µs To 66% VDRM ; RGK ≤ 1.5Ω , Tj = 125oC GATE RATINGS Symbol Parameter Conditions V UnitsMax. Min. -Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time -50 - µs100 100 VRGM This value maybe exceeded during turn-off IFGM PFG(AV) PRGM diGQ /dt tON(min) tOFF(min) µs A/µs kW W A THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Max.Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.03 - 0.0021 oC/W per contact Cathode side cooled Double side cooled Units - 0.011 oC/W Anode side cooled oC/W0.017 Virtual junction temperature TOP /Tstg Operating junction/storage temperature range - Clamping force -40 125 44.036.0 -40 kN oC/WClamping force 40.0kN With mounting compound DC thermal resistance - junction to heatsink surface Tvj 125 oC oC --Peak stray inductance in snubber circuitIT = 3000A, VD = VDRM , Tj = 125˚C, dI/GQ = 40A/ µs, Cs = 3.0µF LS 200 nH
Reverse gate cathode current 50- Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current - 12000 VRGM = 16V, No gate/cathode resistor µC IT = 3000A, VDM = VDRM Snubber Cap Cs = 3.0µF, diGQ /dt = 40A/µs Tj = 125oC unless stated otherwise Symbol Parameter IDM IRRM VGT Gate trigger voltage IGT IRGM EON td tr EOFF tgs tgf tgq Q GQ Q GQT IGQM Min. Max. Units - 4.0 V VDRM = 4500V, VRG = 0V - 100 mA At VRRM -5 0 m A VD = 24V, IT = 100A, Tj = 25oC - 1.2 V VD = 24V, IT = 100A, Tj = 25oC - 4.0 A mA mJ2700-VD = 2000V IT = 3000A, dIT/dt = 300A/µs IFG = 40A, rise time < 1.0µs µs2.0- - 6.0 µs - 13500 mJ - 25.0 µs µs2.5- µs27.5- - 24000 µC - 950 A At 4000A peak, IG(ON) = 10A d.c.
Figure 15. Delay and rise time vs peak forward gate current
Figure 30. General switching waveforms
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 72 max Ø84.6 nom Ø84.6 nom Ø120 max 27.0 25.5 Cathode Anode Gate connector Ø3.0 Auxiliary cathode connector Ø3.0 12˚ 2 holes Ø3.6 x 2.0 deep (One in each electrode) Nominal weight: 1700g Clamping force: 40kN –10% Lead length: 600mm Package outine type code: W ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V TO , rT on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre- loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4096-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.