DG808BC45

DG808BC45 DYNEX | Alldatasheet

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FEATURES

/G1 Double Side Cooling /G1 High Reliability In Service /G1 High Voltage Capability /G1 Fault Protection Without Fuses /G1 High Surge Current Capability /G1 Turn-off Capability Allows Reduction in Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements

APPLICATIONS

/G1 Variable speed AC motor drive inverters (VSD- AC) including Traction drives /G1 Uninterruptable Power Supplies /G1 High Voltage Converters /G1 Choppers /G1 Welding /G1 Induction Heating /G1 DC/DC Converters KEY PARAMETERS ITCM 3000A VDRM 4500V I(AV) 780A dVD/dt* 1000V/µs dIT/dt 400A/µs Outline type code: C (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM (V) Repetitive Peak Reverse Voltage VRRM (V) Conditions DG808BC45 4500 16 Tvj = 125° C, IDM =100mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units ITCM Repetitive peak controllable on-state current VD = 66%VDRM, Tj = 125° C, dIGQ/dt = 40A//G1s, CS = 4 /G1F 3000 A IT(AV) Mean on-state current THS = 80° C, Double side cooled. Half sine 50Hz 780 A IT(RMS) RMS on-state current THS = 80° C, Double side cooled. Half sine 50Hz 1225 A DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 (LN26575)

www.dynexsemi.com SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non repetitive) on-state current 10ms half si ne. Tj = 125° C 16.0 kA I2t I 2t for fusing 10ms half sine. Tj = 125° C 1.28 MA 2s diT/dt Critical rate of rise of on-state current VD = 3000V, IT = 3000A, Tj = 125° C, IFG > 40A, Rise time > 1.0 /G1s 400 A//G1s To 66% VDRM; RGK /G2 1.5/G3, Tj = 125° C 100 V//G1s dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG /G2 -2V, Tj = 125° C 1000 V//G1s LS Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM, Tj = 125oC, dIGQ = 40A/us, CS = 4.0uF 200 nH GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units VRGM Peak reverse gate voltage This value may exceeded du ring turn-off - 16 V IFGM Peak forward gate current - 100 A PFG(AV) Average forward gate power - 20 W PRGM Peak reverse gate power - 24 kW diGQ/dt Rate of rise of reverse gate current 30 60 A//G1s tON(min) Minimum permissible on time 50 - /G1s tOFF(min) Minimum permissible off time 100 - /G1s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Double side cooled DC - 0.014 ° C/W Anode DC - 0.0233 ° C/WRth(j-hs) Thermal resistance – junction to heatsink surface Single side cooled Cathode DC - 0.035 ° C/W Rth(c-hs) Contact thermal resistance Clamping force 36.0kN With mounting compound Per contact - 0.0036 ° C/W Tvj Virtual junction temperature On-state (conducting) -4 0 125 ° C Top/Tstg Operating junction/storage temperature range -40 125 ° C Fm Clamping force 28.0 44.0 kN

www.dynexsemi.com CHARACTERISTICS Tj =125oC unless stated otherwise Symbol Parameter Test Conditions Min. Max. Units VTM) On-state voltage At 3000A peak, I G(ON) = 10A d.c. - 3.75 V IDM Peak off-state current V DRM = 4500V, VRG = 0V - 100 mA IRRM Peak reverse current V RRM = 16V - 50 mA VGT Gate trigger voltage V D = 24V, IT = 100A, Tj = 25oC - 1.2 V IGT Gate trigger current V D = 24V, IT = 100A, Tj = 25oC - 3.5 A IRGM Reverse gate cathode current V RGM = 16V, No gate/cathode resistor - 10 mA EON Turn-on Energy - 2860 mJ td Delay time - 2.1 µs tr Rise time VD = 3000V IT = 3000A, dIT/dt = 300A/µs IFG = 40A, rise time < 1.0µs - 4.8 µs EOFF Turn-off energy - 12000 mJ tgs Storage time - 25 µs tgf Fall time 2 µs tgq Gate controlled turn-off time - 27 µs QGQ Turn-off gate charge 12000 µC QGQT Total turn-off gate charge 24000 µC IGQM Peak reverse gate current IT = 3000A, VDM = VDRM Snubber Cap Cs = 4.0µC diGQ/dt = 40A/us - 800 A

www.dynexsemi.com 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Junction temperature Tj - (oC) Gate trigger voltage VGT - (V) Gate trigger current IGT - (A) VGT IGT 500 1000 1500 2000 2500 3000 3500 1 1.5 2 2.5 3 3.5 4 Instantaneous on-state voltage VTM - (V) Instantaneous on-state current IT - (A) Tj=25oC Tj=125oC Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms Fig.2 Maximum gate trigger voltage/current vs junction temperature Fig.3 On-state characteristics 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 Snubber capacitance CS - (uF) Maximum permissible turn-off current ITCM - (A) Conditions: Tj = 125 oC VDM = VDRM dIGQ = 40A/us Fig.4 Maximum dependence of ITCM on CS Fig.5 Maximum (limit) transient thermal impedance- double side cooled

www.dynexsemi.com 0.0001 0.001 0.01 0.1 1 Pulse duration - (s) Peak half sine wave on-state current - (kA) 500 1000 1500 2000 2500 3000 3500 0 1000 2000 3000 On-state current IT -(A) Turn-on energy loss EON - (mJ) VD = 3000V VD = 2000V VD = 1000V Conditions: T j = 125oC; IFGM = 40A Cs = 4.0uF; Rs = 10 Ohms dI T/dt = 300A/uS dIFG/dt = 40A/uS Fig.6 Surge (non-repetitive) on-state current vs time Fig.7 Turn-on energy vs on-state current 500 1000 1500 2000 2500 3000 3500 4000 4500 0 20 40 60 80 100 Peak forward gate current IFGM - (A) Turn-on energy loss E ON - (mJ) Conditions: Tj = 125oC; IT = 3000A Cs = 4.0uF Rs = 10 Ohms dIT/dt = 300A/uS dIFG/dt = 40A/uS VD = 1000V VD = 2000V VD = 3000V 500 1000 1500 2000 2500 3000 3500 0 100 200 300 400 Rate of rise of on-state current diT/dt - (A/us) Turn-on energy loss EON - (mJ) VD = 3000V VD = 2000V VD = 1000V Conditions: IT = 3000A;Tj = 125oC CS = 4.0uF;RS = 10 Ohms IFGM = 40A;diFG /dt = 40A/us Fig.8 Turn-on energy vs forward gate current Fig.9 T urn-on energy vs rate of rise of on-state current

www.dynexsemi.com 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) Turn-on delay time, td, and rise time, tr - (us) delay time rise time Conditions: Tj = 125oC; IFGM = 40A Cs = 4.0uF; Rs = 10 Ohms diT/dt = 300A/uS Vd = 2000V 0 20 40 60 80 Peak forward gate current IFGM - (A) Turn-on delay time, td, and rise time, tr - (us) rise time delay time Conditions: IT = 3000A Tj = 125oC Cs = 4.0uF Rs = 10 Ohms diT/dt = 300A/uS diFG/dt = 40A/uS VD = 3000V Fig.10 Delay and rise time vs on-state current Fig.11 Delay and rise time vs peak forward gate current 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 On-state current, IT - (A) Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125oC Cs = 4.0uF diGQ/dt = 40A/uS VDM = 100% VDRM VDM = 75% VDRM VDM = 50% VDRM 5000 6000 7000 8000 9000 10000 11000 12000 13000 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/us) Turn-off energy per pulse EOFF - (mJ) VDM = 100% VDRM VDM = 75% VDRM VDM = 50% VDRM Conditions: Tj = 125oC Cs = 4.0uF IT = 3000A Fig.12 Turn-off energy vs on-state current Fig.13 Tu rn-off energy loss vs rate of rise of reverse gate current

www.dynexsemi.com 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 On-state current IT - (A) Turn-off energy per pulse EOFF - (mJ) CS = 4uF CS = 3 uF CS = 2.5 uF CS = 2 uF Conditions : Tj = 125 oC VDM = VDRM dIGQ/dt = 40 A/us 0 1000 2000 3000 4000 On-state current IT - (A) Gate storage time Tgs - (us) Tj = 125 oC Tj = 25 oC Conditions : Cs = 4 uF dIGQ/dt = 40 A/us Fig.14 Turn-off energy vs on-state current Fig.15 Ga te storage time vs on-state current 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us) Gate storage time tgs - (us) Tj = 125 oC Tj = 25 oC Conditions: IT = 3000A Cs = 4.0uF 0.5 1.5 2.5 0 1000 2000 3000 4000 On-state current IT - (A) Gate fall time tgf - (us) Tj = 125 oC Tj = 25 oC Conditions: Cs = 4.0uF diGQ/dt = 40A/uS Fig.16 Gate storage time vs rate of rise of reverse gate current Fig.17 Gate fall time vs on-state current

www.dynexsemi.com 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.1 2.2 2.3 2.4 2.5 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/us) Gate fall time tgf - (us) Conditions: IT = 3000A Cs = 4.0uF Tj = 125 oC Tj = 25 oC 200 300 400 500 600 700 800 900 0 1000 2000 3000 4000 On-state current IT - (A) Peak reverse gate current IGQM - (A) Conditions: Cs = 4.0uF diGQ/dt = 40A/uS Tj = 125 oC Tj = 25 oC Fig.18 Gate fall time vs rate of rise of reverse gate current Fig.19 Peak reverse gate current vs on-state current 600 625 650 675 700 725 750 775 800 825 850 20 25 30 35 40 45 50 55 60 65 Rate of rise of reverse gate current dIGQ/dt - (A/us) Peak reverse gate current IGQM - (A) Conditions: IT = 3000A Cs = 4.0uF Tj = 125oC Tj = 25oC 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 On-state current IT - (A) Turn-off gate charge QGQ - (uC) Tj = 25oC Tj = 125oCConditions: Cs = 4.0uF diGQ/dt = 40A/uS Fig.20 Reverse gate current vs rate of rise of reverse gate current Fig.21 Turn-off gate charge vs on-state current

www.dynexsemi.com 8000 9000 10000 11000 12000 13000 14000 15000 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us) Turn-off gate charge QGQ - (uC) Tj = 125oC Tj = 25oC Conditions: IT = 3000A Cs = 4.0uF 100 200 300 400 500 600 700 800 900 1000 0.1 1 10 100 1000 Gate cathode resistance RGK - (Ohms) Rate of rise of off-state voltage dv/dt - (V/us) VD = 2250V VD = 3000V Tj = 125oC Fig.22 Turn-off charge vs rate of rise of reverse gate current Fig.23 Rate of rise of off-state voltage vs gate cathode resistance

www.dynexsemi.com Fig.24 General switching waveforms

www.dynexsemi.com PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1400g Clamping force: 31.5 ±10% Lead length: 600mm Package outline type code: C Fig.31 Package outline

www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range o f heatsink and clamping systems in line with advanc es in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power As sembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cool ing (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme c onditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety pre cautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 /G1 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. This publication is issued to provide information only wh ich (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. No warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. The Company reserv es the right to alter without prior notice the specif ication, design or price of any product or service. Inf ormation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. All products and materials ar e sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.