DG758BX45

DG758BX45 DYNEX | Alldatasheet

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Technical content

APPLICATIONS

n Variable speed A.C. motor drive inverters (VSD-AC). n Uninterruptable Power Supplies n High Voltage Converters. n Choppers. n Welding. n Induction Heating. n DC/DC Converters.

FEATURES

n Double Side Cooling. n High Reliability In Service. n High Voltage Capability. n Fault Protection Without Fuses. n High Surge Current Capability. n Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements. KEY PARAMETERS ITCM 3000A VDRM 4500V IT(AV) 870A dV D /dt 1000V/ µs diT/dt 300A/ µs Outline type code: X. See Package Details for further information. VOLTAGE RATINGS 4500DG758BX45 ConditionsType Number Tvj = 125oC, IDM = 100mA, IRRM = 50mA Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V CURRENT RATINGS Symbol Parameter Conditions Max. ITCM THS = 80oC. Double side cooled. Half sine 50Hz. VD = 66% VDRM , Tj = 125oC, diGQ /dt = 40A/µs, Cs = 6µF RMS on-state current A A A3000 870 1365 Units Repetitive peak controllable on-state current THS = 80oC. Double side cooled. Half sine 50Hz. IT(RMS) IT(AV) Mean on-state current DG758BX45 Gate Turn-off Thyristor Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000

16.0 1.28 x 106 kA A2s Surge (non-repetitive) on-state current I 2t for fusing 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC diT/dt Critical rate of rise of on-state current 300

100 V/ µs

Max. Units Rate of rise of off-state voltagedVD/dt

1000 V/ µsTo 66% VDRM ; VRG = -2V, Tj = 125oC

VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0µs A/µs To 66% VDRM ; RGK ≤ 1.5Ω , Tj = 125oC GATE RATINGS Symbol Parameter Conditions V UnitsMax. Min. -Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time -50 - µs100 100 VRGM This value maybe exceeded during turn-off IFGM PFG(AV) PRGM diGQ /dt tON(min) tOFF(min) µs A/µs kW W A THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max.Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.0392 - 0.0036 oC/W per contact Cathode side cooled Double side cooled Units - 0.0146 oC/W Anode side cooled oC/W0.0233 Virtual junction temperature TOP /Tstg Operating junction/storage temperature range - Clamping force -40 125 37.033.0 -40 kN oC/WClamping force 35.0kN With mounting compound DC thermal resistance - junction to heatsink surface Tvj 125 oC oC -Peak stray inductance in snubber circuitLS 200 nH

Reverse gate cathode current 50- Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current - 10000 VRGM = 16V, No gate/cathode resistor µC IT = 3000A, VDM = 3000V Snubber Cap Cs = 6.0µF, diGQ /dt = 40A/µs Tj = 125oC unless stated otherwise Symbol Parameter IDM IRRM VGT Gate trigger voltage IGT IRGM EON td tr EOFF tgs tgf tgq Q GQ Q GQT IGQM Min. Max. Units - 4.0 V VDRM = 4500V, VRG = 0V - 100 mA At VRRM -5 0 m A VD = 24V, IT = 100A, Tj = 25oC - 1.2 V VD = 24V, IT = 100A, Tj = 25oC - 3.5 A mA mJ3000-VD = 2250V IT = 3000A, dIT/dt = 300A/µs IFG = 40A, rise time < 1.0µs µs1.5- - 3.0 µs - 6300 mJ - 20.6 µs µs2.2- µs22.8- - 20000 µC - 830 A At 3000A peak, IG(ON) = 8A d.c.

Instantaneous on-state voltage - (V) 1000 2000 3000 4000 5000Instantaneous on-state current - (A) FIG 2 MAXIMUM LIMIT ON STATE CHARACTERISTICS Tj = 125˚C Tj = 25˚C Measured under pulse conditions IG(ON) = 8A 5.5 -50 -25 0 25 50 75 100 125 0.5 1.0 1.5 2.0 Gate trigger voltage VGT - (V) 8.0 6.0 4.0 2.0 Gate trigger current IGT - (A) Junction temperature Tj - (˚C) VGT IGT Fig.1 Maximum gate trigger voltage/current vs junction temperature Fig.2 On-state characteristics

Snubber capacitance Cs - (µF) 500 1000 1500 2000 2500 3000 Maximum permissible turn-off current ITCM - (A) Conditions: T j = 125˚C, VDM = 2000V dIGQ /dt = 40A/µs 0.005 0.010 0.015 0.020 0.001 0.01 0.1 1.0 10 Time - s Thermal impedance - ˚C/W dc Pulse duration - (ms ) Peak half sine wave on-state current - (kA) Fig.3 Maximum dependence of ITCM on CS Fig.4 Maximum (limit) transient thermal impedance - double side cooled Fig.5 Surge (non-repetitive) on-state current vs time

0 200 400 600 800 1000 1200 1400 65 70 80 90 100 110 Maximum permissible case temperature - (˚C) Mean on-state current - (A) 500 1000 1500 2000 2500 3000 3500 4000Mean on-state power dissipation - (W) 180˚ 120˚ 60˚ 30˚ dcConditions; IG(ON) = 8A 120 130 0 100 200 300 400 500 700 800 900 80 100 120 140 Maximum permissible case temperature - (˚C) Mean on-state current - (A) 500 1000 1500 2000 2500 3000Mean on-state power dissipation- (W) 180˚ 120˚ 60˚ 30˚ 90˚ Conditions; IG(ON) = 8A 600 Fig.6 Steady state rectangluar wave conduction loss - double side cooled Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

On-state current - (A) 250 500 750 1000 1250 1500 1750 2000Turn-on energy loss EON - (mJ) 3000 2250 VD = 2250V VD = 1500V VD = 750V Conditions: Tj = 25˚C IFGM = 40A Cs = 6µF Rs = 4.4 Ohms dI/dt = 300A/µs 0 1 02 03 04 05 06 07 08 0 Peak forward gate current IFGM - (A) 500 750 1000 1250 1500 1750 2000 2250 2500Turn-on energy loss EON - (mJ) Conditions: IT = 3000A, Tj = 25˚C Cs = 6µF, Rs = 4.4 Ohms, dIT/dt = 300A/µs VD = 2250V VD = 1500V VD = 750V Fig.8 Turn-on energy vs on-state current Fig.9 Turn-on energy vs peak forward gate current

0 1 02 03 04 05 06 07 08 0 Peak forward gate current IFGM - (A) 500 750 1000 1250 1500 1750 2000 2250 2500Turn-on energy loss EON - (mJ) 2750 3000 Conditions: IT = 3000A, Tj = 125˚C Cs = 6µF, Rs = 4.4Ω , dIT/dt = 300A/µs, dIFG /dt = 40A/µs VD = 2250V VD = 1500V VD = 750V 3250 3500 0 50 100 150 200 250 300 Rate of rise of on-state current dIT/dt - (A/µs) 500 1000 1500 2000Turn-on energy loss EON - (mJ) 3000 Conditions: IT = 3000A Tj = 125˚C Cs = 6µF Rs = 4.4 Ohms I FGM = 40A VD = 2250V 2500 VD = 1500V VD = 750V 0 500 1000 1500 2000 3000 2500 On-state current - (A) 500 1000 1500 2000 2500 3000Turn-on energy loss EON - (mJ) Conditions: Tj = 125˚C, IFGM = 40A Cs = 6µF, Rs = 4.4Ω dIT/dt = 300A/µs dIFG /dt = 40A/µs VD = 1500V VD = 2250V VD = 750V Fig.10 Turn-on energy vs on-state current Fig.11 Turn-on energy vs peak forward gate current Fig.12 Turn-on energy vs rate of rise of on-state current

0 500 1000 1500 2000 3000 2500 On-state current - (A) 0.5 1.0 1.5 2.0 2.5 3.0 Turn-on delay time and rise time - (µs) tr td Conditions: Tj = 125˚C, IFGM = 40A Cs = 6µF, Rs = 4.4Ω , dIT/dt = 300A/µs, VD = 2250V, dIFG /dt = 40A/µs 0 1 02 03 04 05 06 07 08 0 Peak forward gate current IFGM - (A) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Turn-on delay time and rise time - (µs)4.5 5.0 Conditions: IT = 3000A Tj = 125˚C Cs = 6µF Rs = 4.4Ω dIT/dt = 300A/µs VD = 2250V dIFG /dt = 40A/µs td tr Fig.13 Delay time & rise time vs turn-on current Fig.14 Delay time & rise time vs peak forward gate current

0 500 1000 1500 2000 30002500 On-state current - (A) 0.5 1.0 1.5 2.0 2.5 3.0 Turn-off energy loss EOFF - (J) Conditions: Tj = 25˚C Cs = 6µF dI GQ /dt = 40A/µs 3.5 4.0 VDM = 1000V VDM = 2000V VDM = 3000V 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Turn-off energy per pulse EOFF - (J) 3.8 4.0 Conditions: IT = 3000A Tj = 25˚C Cs = 6µF VDM = 3000V VDM = 2000V VDM = 1000V Fig.15 Turn-off energy vs on-state current Fig.16 Turn-off energy vs rate of rise of reverse gate current

20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ /dt- (A/µs) 3.0 4.0 5.0 6.0 7.0 Turn-off energy per pulse EOFF - (J) Conditions: IT = 3000A Tj = 125˚C Cs = 6µF VDM = 1000V VDM = 2000V VDM = 3000V 0 500 1000 1500 2000 2500 3000 On-state current - (A) 1.0 2.0 3.0 4.0 5.0 6.0 Turn-off energy loss EOFF - (J) Conditions: Tj = 125˚C Cs = 6µF dI GQ /dt = 40A/µs VDM = 2000V 7.0 VDM = 3000V VDM = 1000V Fig.17 Turn-off energy vs on-state current Fig.18 Turn-off energy loss vs rate of rise of reverse gate current

0 500 1000 1500 2000 2500 3000 On-state current - (A) 1.0 2.0 3.0 4.0 5.0 6.0 Turn-off energy per pulse EOFF - (J) Conditions: Tj = 125˚C VDM = 2000V dIGQ /dt = 40A/µs Cs = 6.0µFCs = 4.0µF Cs = 2.0µF Cs = 1.0µF 0 500 1000 1500 2000 2500 3000 On-state current - (A) Gate storage time tgs - (µs) Conditions: Cs = 6µF dI GQ /dt = 40A/µs Tj = 25˚C Tj = 125˚C Fig.19 Turn-off energy vs on-state current Fig.20 Gate storage time vs on-state current

20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 25Gate storage time tgs - (µs) Conditions: IT = 3000A Cs = 6µFTj = 125˚C Tj = 25˚C 0 500 1000 1500 2000 2500 3000 On-state current - (A) 1.0 1.5 2.0 2.5Gate fall time tgf - (µs) Conditions: Cs = 6µF dI GQ /dt = 40A/µs Tj = 125˚C Tj = 25˚C 0.5 Fig.21 Gate storage time vs rate of rise of reverse gate current Fig.22 Gate fall time vs on-state current

20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 0.5 1.00 1.5 2.0 2.5Gate fall time tgf - (µs) Conditions: IT = 3000A Cs = 6µF Tj = 125˚C Tj = 25˚C 0 500 1000 1500 2000 2500 3000 On-state current - (A) 100 300 500 700 Peak reverse gate current IGQM - (A) Conditions: Cs = 6µF dI GQ /dt = 40A/µs Tj = 125˚C Tj = 25˚C 900 800 600 400 200 Fig.23 Gate fall time vs rate of rise of reverse gate current Fig.24 Peak reverse gate current vs turn-off current

20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 500 600 700 800 900Peak reverse gate current IGQM - (A) 1000 Conditions: IT = 3000A Cs = 6µF Tj = 125˚C Tj = 25˚C 0 500 1000 1500 2000 2500 3000 On-state current - (A) 2.5 5.0 7.5 Total turn-off charge QGQ - (mC) Conditions: Cs = 6µF dI GQ /dt = 40A/µs Tj = 125˚C Tj = 25˚C 10.0 Fig.25 Peak reverse gate current vs rate of rise of reversegate current Fig.26 Turn-off gate charge vs on-state current

20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 5.0 7.5 10.0 12.5 15.0Turn-off gate charge QGQ - (mC) Conditions: IT = 3000A Cs = 6µF Tj = 125˚C Tj = 25˚C 500 1000 Rate of rise of off-state voltage dV/dt - (V/µs) Gate cathode resistance RGK - (Ohms) VD = 3000V VD = 2250V 0.1 1.0 10 100 1000 Tj = 125˚C Fig.27 Turn-off gate charge vs rate of rise of reverse gate current Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

0.9VD 0.1VD td tr tgt IT VDP 0.9IT ITAIL dVD /dt VD VDM Gate voltage and current tgs tgf tw1 VFG IFG 0.1IFG dIFG /dt 0.1IGQ Q GQ 0.5IGQM IGQM VRG V(RG)BR IG(ON) tgq Recommended gate condition: ITCM = 3000A IFG = 40A IG(ON) = 8A d.c. tw1(min) = 10µs IGQM = 830A diGQ /dt = 40A/µs Q GQ = 10000µC VRG(min) = 2V VRG(max) = 16V These are recommended Mitel Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 63 max 26.0 –0.5 63 max 9.6 15˚ Anode Cathode Ø66 Ø112 max Ø70 Nominal weight: 1200g Clamping force: 35kN –10% Lead length: 505mm Package outine type code: X ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V TO , rT on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre- loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4095-6 Issue No. 6.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.