DG648BH45

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Technical content

APPLICATIONS

n Variable speed A.C. motor drive inverters (VSD-AC) n Uninterruptable Power Supplies n High Voltage Converters n Choppers n Welding n Induction Heating n DC/DC Converters

FEATURES

n High Reliability In Service n High Voltage Capability n Fault Protection Without Fuses n High Surge Current Capability n Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements KEY PARAMETERS ITCM 2000A VDRM 4500V IT(AV) 745A dVD/dt 1000V/ µs diT/dt 300A/ µs Outline type code: H. See Package Details for further information. VOLTAGE RATINGS 4500DG648BH45 ConditionsType Number Tvj = 125oC, IDM = 50mA, IRRM = 50mA Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V CURRENT RATINGS Symbol Parameter Conditions Max. ITCM THS = 80oC. Double side cooled. Half sine 50Hz. VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF RMS on-state current A A A2000 745 1170 Units Repetitive peak controllable on-state current THS = 80oC. Double side cooled. Half sine 50Hz. IT(RMS) IT(AV) Mean on-state current DG648BH45 Gate Turn-off Thyristor DS4093-4 July 2014 (LN31736)

16.0 1.28 x 106 kA A2s Surge (non-repetitive) on-state current I2t for fusing 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC diT/dt Critical rate of rise of on-state current 300

175 V/ µs

Max. Units Rate of rise of off-state voltagedVD/dt

1000 V/ µsTo 66% VDRM; VRG = -2V, Tj = 125oC

VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A, Rise time > 1.0µs A/µs To 66% VDRM; RGK ≤ 1.5Ω , Tj = 125oC GATE RATINGS Symbol Parameter Conditions V UnitsMax. Min. -Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time - 50 - µs100 100 VRGM This value maybe exceeded during turn-off IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) µs A/µs kW W A THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max.Min. Rth(c-hs) Contact thermal resistance Rth(j-hs) - - 0.045 - 0.006 oC/W per contact Cathode side cooled Double side cooled Units - 0.018 oC/W Anode side cooled oC/W0.03 Virtual junction temperature TOP/Tstg Operating junction/storage temperature range - Clamping force 125 22.018.0 -40 kN oC/WClamping force 20.0kN With mounting compound DC thermal resistance - junction to heatsink surface Tvj 125 oC oC --LS Peak stray inductance in snubber circuit nH200IT = 2000A, VDM = 4500V, Tj = 125°C, diGQ/dt = 40A/µs, Cs = 2.0µF

Reverse gate cathode current 50 - Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current - 6000 VRGM = 16V, No gate/cathode resistor µC IT = 2000A, VDM = VDRM Snubber Cap Cs = 2.0µF, diGQ/dt = 40A/µs Tj = 125oC unless stated otherwise Symbol Parameter IDM IRRM VGT Gate trigger voltage IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM Min. Max. Units - 3.2 V VDRM = 4500V, VRG = 0V - 100 mA At VRRM -5 0 m A VD = 24V, IT = 100A, Tj = 25oC - 1.0 V VD = 24V, IT = 100A, Tj = 25oC - 3.0 A mA mJ3170-VD = 3000V IT = 2000A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.0µs µs1.35 - - 3.2 µs - 10000 mJ - 20.0 µs µs2.0 - µs22.0 - - 12000 µC - 690 A At 2000A peak, IG(ON) = 7A d.c.

-50 -25 0 25 50 75 100 125 150 Junction temperature Tj - (°C) 2.0 4.0 6.0 8.0 Gate trigger current IGT - (A) 0.5 1.0 1.5 2.0Gate trigger voltage VGT - (V) IGT VGT Instantaneous on-state voltage VTM - (V) 1000 2000 3000 4000 Instantaneous on-state current ITM - (A) Measured under pulse conditions. IG(ON) = 7A Half sine wave 10ms Tj = 125°C Tj = 25°C Fig.1 Maximum gate trigger voltage/current vs junction temperature Fig.2 On-state characteristics

Fig.3 Maximum dependence of ITCM on CS Fig.4 Maximum (limit) transient thermal impedance - double side cooled Fig.5 Surge (non-repetitive) on-state current vs time 0 1.0 2.0 3.0 4.0 Snubber capacitance CS - (µF) 1000 2000 3000 Maximum permissible turn-off current ITCM - (A) Conditions: Tj = 125°C, VDM = VDRM, dIGQ/dt = 40A/µs 0.005 0.010 0.015 0.020 0.001 0.01 0.1 1.0 10 Time - (s) Thermal impedance - °C/W dc Pulse duration - (s) Peak half sine wave on-state current - (kA)

0 500 1000 1500 70 80 90 100 120 130 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (°C) 4000 3000 2000 1000 Mean on-state power dissipation - (W) Conditions: IG(ON) = 7A 180° 120° 60° 30° dc 0 400 800 1200 80 90 100 120 130 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (°C) 3000 2000 1000 Mean on-state power dissipation - (W) Conditions: IG(ON) = 7A 120° 90° 60° 30° 180° 200 600 1000 1400 Fig.6 Steady state rectangluar wave conduction loss - double side cooled Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

Peak forward gate current IFGM - (A) 4000 3000 2000 1000 Turn-on energy loss EON - (mJ) Conditions: Tj = 25°C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dI FG/dt = 30A/µs VD = 3000V VD = 2000V VD = 1000V 5000 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 4000 3000 2000 1000 Turn-on energy loss EON - (mJ) Conditions: Tj = 25°C, IFGM = 30A, CS = 2.0µF, dI/dt = 300A/µs, dI FG/dt = 30A/µs VD = 3000V VD = 2000V VD = 1000V Fig.8 Turn-on energy vs on-state current Fig.9 Turn-on energy vs peak forward gate current

Peak forward gate current IFGM - (A) 4000 3000 2000 1000 Turn-on energy loss EON - (mJ) Conditions: Tj = 125°C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dI FG/dt = 30A/µs VD = 3000V VD = 2000V VD = 1000V 5000 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 4000 3000 2000 1000 Turn-on energy loss EON - (mJ) Conditions: Tj = 125°C, IFGM = 30A, CS = 2.0µF, RS = 10Ω, dIT/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 3000V VD = 2000V VD = 1000V 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/µs) 4000 3000 2000 1000 Turn-on energy loss EON - (mJ) Conditions: IT = 2000A, Tj = 125°C, CS = 2.0µF RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/µs VD = 2000V VD = 3000V VD = 1000V Fig.10 Turn-on energy vs on-state current Fig.11 Turn-on energy vs peak forward gate current Fig.12 Turn-on energy vs rate of rise of on-state current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 4.0 3.0 2.0 1.0 Turn-on delay and rise time - (µs) Conditions: Tj = 125°C, IFGM = 30A, CS = 2.0µF, VD = 3000V, RS = 10Ω, dI T/dt = 300A/µs, dIFG/dt = 30A/µs, td tr 0 2 04 06 08 0 Peak forward gate current IFGM - (A) 8.0 6.0 4.0 2.0 Turn-on delay time and rise time - (µs) Conditions: Tj = 125°C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms, dI/dt = 300A/µs, dI FG/dt = 30A/µs, VD = 3000V td tr Fig.13 Delay time & rise time vs turn-on current Fig.14 Delay time & rise time vs peak forward gate current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 4000 3000 2000 1000 Turn-off energy loss EOFF - (mJ) Conditions: Tj = 25°C, CS = 2.0µF, dIGQ/dt = 40A/µs 5000 0.5x VDRM 0.75x VDRM VDRM 20 30 40 50 60 70 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 6000 5000 4000 3000 2000 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 25°C, CS = 2.0µF, IT = 2000A 0.5x VDRM 0.75x VDRM VDRM Fig.15 Turn-off energy vs on-state current Fig.16 Turn-off energy vs rate of rise of reverse gate current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) FIG 17 TURN OFF ENERGY ON STATE CURRENT 8000 6000 4000 2000 Turn-off energy loss EOFF - (mJ) Conditions: Tj = 125°C, CS = 2.0µF, dIGQ/dt = 40A/µs 10000 0.5x VDRM 0.75x VDRM VDRM 20 30 40 50 60 70 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 12000 10000 8000 6000 4000 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125°C, CS = 2.0µF, IT = 2000A 0.5x VDRM 0.75x VDRM VDRM Fig.17 Turn-off energy vs on-state current Fig.18 Turn-off energy loss vs rate of rise of reverse gate current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 8000 6000 4000 2000 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125°C, VDM = 0.75x VDRM, dIGQ/dt = 40A/µs CS = 4.0µF CS = 2.0µF 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 20.0 15.0 10.0 5.0 Gate storage time tgs - (µs) Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 25°C Tj = 125°C Fig.19 Turn-off energy vs on-state current Fig.20 Gate storage time vs on-state current

Rate of rise of reverse gate current dIGQ/dt - (A/µs) Gate storage time tgs - (µs) Conditions: CS = 2.0µF, IT = 2000A Tj = 25°C Tj = 125°C 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 2.0 1.5 1.0 0.5 Gate fall time tgf - (µs) Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 25°C Tj = 125°C Fig.21 Gate storage time vs rate of rise of reverse gate current Fig.22 Gate fall time vs on-state current

Rate of rise of reverse gate current dIGQ/dt - (A/µs) 2.5 2.0 1.5 1.0 0.5 Gate fall time tgf - (µs) Conditions: CS = 2.0µF, IT = 2000A Tj = 25°C Tj = 125°C 0 500 1000 1500 2000 2500 3000 Turn-off current IT - (A) 800 600 400 200 Peak reverse gate current IGQM - (A) Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 25°C Tj = 125°C Fig.23 Gate fall time vs rate of rise of reverse gate current Fig.24 Peak reverse gate current vs turn-off current

Rate of rise of reverse gate current dIGQ/dt - (A/µs) 700 650 600 550 500 Peak reverse gate current IGQM - (A) Conditions: CS = 2.0µF, IT = 2000A Tj = 25°C Tj = 125°C 750 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 8000 6000 4000 2000 Total turn-off charge QGQ - (µC) Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 25°C Tj = 125°C Fig.25 Peak reverse gate current vs rate of rise of reversegate current Fig.26 Turn-off gate charge vs on-state current

Rate of rise of reverse gate current dIGQ/dt - (A/µs) 7000 6000 5000 4000 3000 Turn-off gate charge QGQ - (µC) Conditions: CS = 2.0µF, IT = 2000A Tj = 25°C TJ = 125°C 500 1000 Rate of rise of off-state voltage dV/dt - (V/µs) Gate cathode resistance RGK - (Ohms) VD = 3000V VD = 2250V 0.1 1.0 10 100 1000 Tj = 125°C Fig.27 Turn-off gate charge vs rate of rise of reverse gate current Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

0.9VD 0.1VD td tr tgt IT VDP 0.9IT ITAIL dVD/dt VD VDM Gate voltage and current tgs tgf tw1 VFG IFG 0.1IFG dIFG/dt 0.1IGQ QGQ 0.5IGQM IGQM VRG V(RG)BR IG(ON) tgq Recommended gate conditions: ITCM = 2000A IFG = 30A IG(ON) = 7A d.c. tw1(min) = 20µs IGQM = 690A diGQ/dt = 40A/µs QGQ = 6000µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 – 0.05 x 2.0 – 0.1 deep (One in each electrode) 26 – 0.5 9.6 15° Cathode Aux. Tube Gate Tube Cathode Anode Ø62.85 Ø100 Ø62.85 Nominal weight: 820g Clamping force: 20kN –10% Lead coaxial length: 600mm Package outine type code: H ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of VTO, rT on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177