DG646BH25

DG646BH25 DYNEX | Alldatasheet

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Technical content

APPLICATIONS

n Variable speed A.C. motor drive inverters (VSD-AC) n Uninterruptable Power Supplies n High Voltage Converters n Choppers n Welding n Induction Heating n DC/DC Converters

FEATURES

n High Reliability In Service n High Voltage Capability n Fault Protection Without Fuses n High Surge Current Capability n Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements KEY PARAMETERS ITCM 2000A VDRM 2500V IT(AV) 867A dV D /dt 1000V/ µs diT/dt 300A/ µs Outline type code: H. See Package Details for further information. VOLTAGE RATINGS 2500DG646BH25 ConditionsType Number Tvj = 125oC, IDM = 50mA, IRRM = 50mA Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V CURRENT RATINGS Symbol Parameter Conditions Max. ITCM THS = 80oC. Double side cooled. Half sine 50Hz. VD = VDRM , Tj = 125oC, diGQ /dt = 40A/µs, Cs = 2.0µF RMS on-state current A A A2000 867 1360 Units Repetitive peak controllable on-state current THS = 80oC. Double side cooled. Half sine 50Hz. IT(RMS) IT(AV) Mean on-state current DG646BH25 Gate Turn-off Thyristor Replaces March 1998 version, DS4092-2.3 DS4092-3.0 January 2000

18.0 1.62 x 106 kA A2s Surge (non-repetitive) on-state current I 2t for fusing 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC diT/dt Critical rate of rise of on-state current 300

135 V/ µs

Max. Units Rate of rise of off-state voltagedVD/dt

1000 V/ µsTo 66% VDRM ; VRG = -2V, Tj = 125oC

VD = 1500V, IT = 2000A, Tj = 125oC, IFG > 30A, Rise time > 1.0µs A/µs To 66% VDRM ; RGK ≤ 1.5Ω , Tj = 125oC GATE RATINGS Symbol Parameter Conditions V UnitsMax. Min. -Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time -50 - µs100 100 VRGM This value maybe exceeded during turn-off IFGM PFG(AV) PRGM diGQ /dt tON(min) tOFF(min) µs A/µs kW W A THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max.Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.045 - 0.006 oC/W per contact Cathode side cooled Double side cooled Units - 0.018 oC/W Anode side cooled oC/W0.03 Virtual junction temperature TOP /Tstg Operating junction/storage temperature range - Clamping force 125 22.018.0 -40 kN oC/WClamping force 20.0kN With mounting compound DC thermal resistance - junction to heatsink surface Tvj 125 oC oC --LS Peak stray inductance in snubber circuit nH 200IT = 2000A, VDM = 2500V, Tj = 125˚C, diGQ /dt = 40A/µs, Cs = 2.0µF

Reverse gate cathode current 50- Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current - 6600 VRGM = 16V, No gate/cathode resistor µC IT = 2000A, VDM = 2500V Snubber Cap Cs = 2.0µF, diGQ /dt = 40A/µs Tj = 125oC unless stated otherwise Symbol Parameter IDM IRRM VGT Gate trigger voltage IGT IRGM EON td tr EOFF tgs tgf tgq Q GQ Q GQT IGQM Min. Max. Units - 2.6 V VDRM = 2500V, VRG = 0V - 100 mA At VRRM -5 0 m A VD = 24V, IT = 100A, Tj = 25oC - 1.0 V VD = 24V, IT = 100A, Tj = 25oC - 3.0 A mA mJ1188-VD = 15000V IT = 2000A, dIT/dt = 300A/µs IFG = 30A, rise time < 1.0µs µs1.2- - 3.0 µs - 4000 mJ - 17.0 µs µs2.0- µs19.0- - 13200 µC - 650 A At 2000A peak, IG(ON) = 7A d.c.

-50 -25 0 25 50 75 100 125 150 Junction temperature Tj - (˚C) FIG 1 MAXIMUM GATE TRIGGER VOLTAGE/CURRENT 2.0 4.0 6.0 8.0 Gate trigger current IGT - (A) 0.5 1.0 1.5 2.0Gate trigger voltage VGT - (V) IGT VGT Instantaneous on-state voltage VTM - (V) 1000 2000 3000 4000 Instantaneous on-state current ITM - (A) Measured under pulse conditions. IG(ON) = 7A Half sine wave 10ms Tj = 125˚C Tj = 25˚C Fig.1 Maximum gate trigger voltage/current vs junction temperature Fig.2 On-state characteristics

Pulse duration - (s) Peak half sine wave on-state current - (kA) 0.005 0.010 0.015 0.020 0.001 0.01 0.1 1.0 10 Time - (s) Thermal impedance - ˚C/W dc 0 1.0 2.0 3.0 4.0 Snubber capacitance CS - (µF) 1000 2000 3000 Maximum permissible turn-off current ITCM - (A) Conditions: T j = 125˚C, VDM = VDRM , dIGQ /dt = 40A/µs Fig.3 Maximum dependence of ITCM on CS Fig.4 Maximum (limit) transient thermal impedance - double side cooled Fig.5 Surge (non-repetitive) on-state current vs time

0 500 1000 1500 70 80 90 100 120 130 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (˚C) 4000 3000 2000 1000 Mean on-state power dissipation - (W) Conditions: IG(ON) = 7A 180˚ 120˚ 60˚ 30˚ dc 0 400 800 1200 80 90 100 120 130 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (˚C) 3000 2000 1000 Mean on-state power dissipation - (W) Conditions: IG(ON) = 7A 120˚ 90˚ 60˚ 30˚ 180˚ 200 600 1000 70 Fig.6 Steady state rectangluar wave conduction loss - double side cooled Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

Peak forward gate current IFGM - (A) 2000 1500 1000 500 Turn-on energy loss EON - (mJ) Conditions: Tj = 25˚C, IT = 2000A, C S = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG /dt = 30A/µs VD = 1500V VD = 1000V VD = 750V 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 2000 1500 1000 500 Turn-on energy loss EON - (mJ) Conditions: Tj = 25˚C, IFGM = 30A, C S = 2.0µF, RS = 10Ω , dI/dt = 300A/µs, dIFG /dt = 30A/µs VD = 1500V VD = 1000V VD = 750V Fig.8 Turn-on energy vs on-state current Fig.9 Turn-on energy vs peak forward gate current

Peak forward gate current IFGM - (A) 2000 1500 1000 500 Turn-on energy loss EON - (mJ) Conditions: Tj = 125˚C, IT = 2000A, C S = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dI FG /dt = 30A/µs VD = 1000V VD = 1500V VD = 750V 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/µs) FIG 12 TURN ON ENERGY RATE OF RISE 2000 1500 1000 500 Turn-on energy loss EON - (mJ) Conditions: IT = 2000A, Tj = 125˚C, C S = 2.0µF R S = 10 Ohms IFGM = 30A, dIFG /dt = 30A/µs VD = 1000V VD = 1500V VD = 750V 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 2000 1500 1000 500 Turn-on energy loss EON - (mJ) Conditions: Tj = 125˚C, IFGM = 30A, C S = 2.0µF, R S = 10 Ohms, dIT/dt = 300A/µs, dIF/dt = 30A/µs VD = 1500V VD = 1000V VD = 750V Fig.10 Turn-on energy vs on-state current Fig.11 Turn-on energy vs peak forward gate current Fig.12 Turn-on energy vs rate of rise of on-state current

Peak forward gate current IFGM - (A) 4.0 3.0 2.0 1.0 Turn-on delay time and rise time - (µs) Conditions: Tj = 125˚C, IT = 2000A, C S = 2.0µF, R S = 10 Ohms, dI/dt = 300A/µs, dIFG /dt = 30A/µs, VD = 1500V 5.0 td tr 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 4.0 3.0 2.0 1.0 Turn-on delay and rise time - (µs) Conditions: Tj = 125˚C, IFGM = 30A, C S = 2.0µF, VD = 1500V, R S = 10Ω , dIT/dt = 300A/µs, dIF/dt = 30A/µs td tr Fig.13 Delay time & rise time vs turn-on current Fig.14 Delay time & rise time vs peak forward gate current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) FIG 15 TURN OFF ENERGY ON STATE CURRENT 2000 1500 1000 500 Turn-off energy loss EOFF - (mJ) Conditions: Tj = 25˚C, C S = 2.0µF, dIGQ /dt = 40A/µs 2500 0.5x VDRM 0.75x VDRM VDRM 20 30 40 50 60 70 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 2500 2000 1500 1000 500 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 25˚C, C S = 2.0µF, IT = 2000A 0.5x VDRM 0.75x VDRM VDRM Fig.15 Turn-off energy vs on-state current Fig.16 Turn-off energy vs rate of rise of reverse gate current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) FIG 17 TURN OFF ENERGY ON STATE CURRENT 4000 3000 2000 1000 Turn-off energy loss EOFF - (mJ) Conditions: Tj = 125˚C, C S = 2.0µF, dIGQ /dt = 40A/µs 0.5x VDRM 0.75x VDRM VDRM 20 30 40 50 60 70 Rate of rise of reverse gate current dIGQ /dt - (A/µs) 5000 4000 3000 2000 1000 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125˚C, C S = 2.0µF, IT = 2000A 0.5x VDRM 0.75x VDRM VDRM Fig.17 Turn-off energy vs on-state current Fig.18 Turn-off energy loss vs rate of rise of reverse gate current

0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 4000 3000 2000 1000 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125˚C, VDM = VDRM , dIGQ /dt = 40A/µs C S = 4.0µFC S = 2.0µF 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 20.0 15.0 10.0 5.0 Gate storage time tgs - (µs) Conditions: C S = 2.0µF, dIGQ /dt = 40A/µs Tj = 25˚C Tj = 125˚C Fig.19 Turn-off energy vs on-state current Fig.20 Gate storage time vs on-state current

Rate of rise of reverse gate current dIGQ /dt - (A/µs) Gate storage time tgs - (µs) Conditions: C S = 2.0µF, IT = 2000A Tj = 25˚C Tj = 125˚C 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 2.0 1.5 1.0 0.5 Gate fall tgf - (µs) Conditions: C S = 2.0µF, dIGQ /dt = 40A/µs Tj = 25˚C Tj = 125˚C Fig.21 Gate storage time vs rate of rise of reverse gate current Fig.22 Gate fall time vs on-state current

Rate of rise of reverse gate current dIGQ /dt - (A/µs) 2.5 2.0 1.5 1.0 0.5 Gate fall time tgf - (µs) Conditions: C S = 2.0µF, IT = 2000A Tj = 25˚C Tj = 125˚C 0 500 1000 1500 2000 2500 3000 Turn-off current IT - (A) 800 600 400 200 Peak reverse gate current IGQM - (A) Conditions: C S = 2.0µF, dIGQ /dt = 40A/µs Tj = 25˚C Tj = 125˚C Fig.23 Gate fall time vs rate of rise of reverse gate current Fig.24 Peak reverse gate current vs turn-off current

Rate of rise of reverse gate current dIGQ /dt - (A/µs) 650 600 550 500 450 Peak reverse gate current IGQM - (A) Conditions: C S = 2.0µF, IT = 2000A Tj = 25˚C Tj = 125˚C 700 0 500 1000 1500 2000 2500 3000 On-state current IT - (A) 8000 6000 4000 2000 Total turn-off charge QGQ - (µC) Conditions: C S = 2.0µF, dIGQ /dt = 40A/µs Tj = 25˚C Tj = 125˚C Fig.25 Peak reverse gate current vs rate of rise of reversegate current Fig.26 Turn-off gate charge vs on-state current

Rate of rise of reverse gate current dIGQ /dt - (A/µs) 8000 7000 6000 5000 4000 Turn-off gate charge QGQ - (µC) Conditions: C S = 2.0µF, IT = 2000A Tj = 25˚C Tj = 125˚C 500 1000 Rate of rise of off-state voltage dV/dt - (V/µs) Gate cathode resistance RGK - (Ohms) VD = 1650V VD = 1250V 0.1 1.0 10 100 1000 Tj = 125˚C Fig.27 Turn-off gate charge vs rate of rise of reverse gate current Fig.28 Rate of rise of off-state voltage vs gate cathode resistance

0.9VD 0.1VD td tr tgt IT VDP 0.9IT ITAIL dVD /dt VD VDM Gate voltage and current tgs tgf tw1 VFG IFG 0.1IFG dIFG /dt 0.1IGQ Q GQ 0.5IGQM IGQM VRG V(RG)BR IG(ON) tgq Recommended gate conditions: ITCM = 2000A IFG = 30A IG(ON) = 7A d.c. tw1(min) = 20µs IGQM = 650 A diGQ /dt = 40A/µs Q GQ = 6600µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 – 0.05 x 2.0 – 0.1 deep (One in each electrode) 26 – 0.5 9.6 15˚ Cathode Aux. Tube Gate Tube Cathode Anode Ø62.85 Ø100 Ø62.85 Nominal weight: 820g Clamping force: 20kN –10% Lead length: 505mm Package outine type code: H ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V TO , rT on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre- loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4092-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.