DFM600BXS12-A000 DYNEX | Alldatasheet

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Technical content

Fast Recovery Diode Module PDS5725-1.3 October 2007 (LN25580) www.dynexsemi.com

FEATURES

/G1 Low Reverse Recovery Charge /G1 High Switching Speed /G1 Low Forward Voltage Drop /G1 Isolated Base

APPLICATIONS

/G1 Chopper Diodes /G1 Boost and Buck Converters /G1 Free-wheel Circuits /G1 Snubber Circuits /G1 Resonant Converters /G1 Multi-level Switch Inverters The DFM600BXS12-A000 is a single 1200V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. These modules incorporates electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layo uts and utilise grounded heat sink for safety.

ORDERING INFORMATION

Order As: DFM600BXS12-A000 Note: When ordering, please use the whole part number. KEY PARAMETERS VRRM 1200V VF (typ) 2.0 V IF (max) 600A IFM (max) 1200A 1(K)2(A) Fig. 1 Circuit diagram Outline type code: B (See package details for further information) Fig. 2 Module outline

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 2/7 www.dynexsemi.com ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of t he package. Appropriate safety precautions should alw ays be followed. Exposure to Absolute Maximum Rati ngs may affect device reliability. Tcase = 25° C unless stated otherwise Symbol Parameter Test Conditions Max. Units VRRM Repetitive peak reverse voltage T j = 125° C 1200 V IF Forward current (per arm) DC, T case = 70° C, Tj = 125° C 600 A IFM Max. forward current T case = 110° C, tp = 1ms 1200 A IFSM Surge (non repetitive) forward current 3347 A I2t I 2t value fuse current rating V R = 0, tP = 10ms, Tj = 125° C 56 kA 2s Pmax Maximum power dissipation T case = 25° C, Tj = 125° C 2.0 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2.5 kV THERMAL AND MECHANICAL RATINGS Internal insulation material: Al 2O3 Baseplate material: Copper Creepage distance: 20mm Clearance: 11mm CTI (Critical Tracking Index): 175 Symbol Parameter Test Conditions Min. Typ. Max. Units Rth(j-c) Thermal resistance – diode (per arm) Continuous dissipation – junction to case - - 50 ° C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 15 ° C/kW Tj Junction temperature - - - 125 ° C Tstg Storage temperature range - -40 - 125 ° C - Screw torque Mounting – M6 3 - 5 Nm Electrical connections – M6 2.5 - 5 Nm

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/7 www.dynexsemi.com STATIC ELECTRICAL CHARACTERISTICS Tj = 25° C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units IRM Peak reverse current V R = 1200V, Tj = 125° C - - 10 mA IF = 600A - 2.0 2.5 V VF Forward voltage IF = 600A, Tj = 125° C - 2.05 2.55 V L Inductance (module) - - 16 - nH DYNAMIC ELECTRICAL CHARACTERISTICS Tj = 25° C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units trr Reverse recovery time - 0.8 - /G1 Irr Reverse recovery current - 600 - A Qrr Reverse recovery charge - 110 - /G2 Erec Reverse recovery energy IF = 600A, dIF/G3/G4/G5/G6/G7/G6/G8/G9/G10/G10/G11/G3/G1/G12 VR = 600V - 35 - mJ Tj = 125° C unless stated otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units trr Reverse recovery time - 0.6 - /G1 Irr Reverse recovery current - 640 - A Qrr Reverse recovery charge - 170 - /G2 Erec Reverse recovery energy IF = 600A, dIF/G3/G4/G5/G6/G7/G6/G8/G9/G10/G10/G11/G3/G1/G12 VR = 600V - 65 - mJ

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 4/7 www.dynexsemi.com 200 400 600 800 1000 1200 1400 1600 Forward voltage, VF - (V) Forward current, IF - (A) T j = 25° C T j = 125° C VF is measured at power busbars and not the auxiliary terminals 0.1 100 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Transient thermal impedance, Zth (j-c) - (° C/kW ) Diode R i (° C/K W) t i (ms) 1.12 0.10 6.32 3.21 18.56 38.58 22.51 113.97 Fig.3 Diode Typical forward characteristics Fig.4 Transient thermal impedance 500 1000 1500 2000 2500 0 25 50 75 100 125 Case temperature, Tc - ° C Power dissipation - (W) 200 400 600 800 1000 0 25 50 75 100 125 Case temperature, Tc - (° C) Forward current, IF - (A) Fig.5 Power dissipation Fig.6 DC current rating vs c ase temperature

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/7 www.dynexsemi.com 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 1400 Reverse voltage, VR - (V) Reverse recovery current, Irr - (A) Tcase =125° C Fig.7 RBSOA

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 6/7 www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 475g Module outline type code: B

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/7 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a su pport service for those customers requiring more th an the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid coole d assemblies covering the full range of circuit des igns in general use today. The Assembly group offers high quality engineering support dedicated to designing new unit s to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power As sembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary ra nge of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semic onductors. Data with respect to air natural, force d air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 /G1 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only wh ich (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form pa rt of any order or contract nor to be regarded as a representation relatin g to the products or services concerned. No warranty or gu arantee express or implied is made regarding the capab ility, performance or suitability of any product or service. The Company reserv es the right to alter without prior notice the speci fication, design or price of any product or service. In formation concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to fully determine the performance and suitability of any e quipment using such information and to ensure that any p ublication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant inj ury or death to the user. All products and materials ar e sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.