DBES105A_06 UMS | Alldatasheet
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Technical content
Ref. : DSDBES105a6354 - 20 Dec 06 1/4 Specificatio ns subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Flip-Chip Dual Diode GaAs Diode
Description
The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features ■ High cut-off frequencies: 3THz ■ High breakdown voltage: < -5V @ 20µA ■ Good ideality factor: 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25° C Symbol Parameter Typ Unit Wu Gate Width 5 µm Fco Cut-off frequency 3 THz n Ideality factor 1.2 BVak Anode-cathode break-down voltage < -5 V ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
DBES105a Flip-Chip Dual Diode Ref. : DSDBES105a6354 - 20 Dec 06 2/4 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Equivalent Circuit Rs( ΩΩ ΩΩ ) Cjo(fF) (0V) Cpar(fF) Fco(THz) 4.4 9.5 5.8 2.4 Fco = 1/(2 π Rs [Cpar + Cjo]) Rp can be neglected Absolute Maximum Ratings (1) Tamb. = 25° C Symbol Parameter Typ. values Unit Vak Reverse anode-cathode voltage -5 V Iak Forward anode-cathode current 10 mA (1) Operation of this device above anyone of these parameters may cause permanent damage. Imax vs Tamb 0 20 40 60 80 100 120 Tam b (° C) I max( mA) Rp Rs Cj0 Cpar
Flip-Chip Dual Diode DBES105a Ref. : DSDBES105a6354 - 20 Dec 06 3/4 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Typical DC Measurements Typical On-Wafer Measurements Bias Conditions Vak = 0V UI-Characteristic 1E-11 1E-10 1E-09 1E-08 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 Voltage U D [V] Current |I D | [A] 1x5µm Is = 3.5e-14 A
DBES105a Flip-Chip Dual Diode Ref. : DSDBES105a6354 - 20 Dec 06 4/4 Specification s subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Mechanical data Dimensions in µm Dimensions: 230 ± 35 x 530 ± 35 µm Thickness= 100µm ± 10 µm
Ordering Information
Chip form: DBES105a99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. 530 460 30 30 100 160 230 204 204 diameter 20