CHM1270A98F_15 UMS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Ref. : DSCHM1270a2352 - 17 Dec 12 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 W-Band Dual Channel Transmitter/Receiver GaAs Monolithic Microwave IC

Description

Transmitter/Receiver block diagram The CHM1270a98F is a dual channel self-biased transmitter/receiver. One RF port used for reception and one for both emission and reception. This product is designed for optimum IF noise performances. This circuit is well adapted to the sensors system at W -Band, such as automotive long range radar and industrial sensors. This circu it is manufactured with the BES MMIC process: 1 µm very high Ft Schottky diode device, air bridges, via holes through the substrate. It is available in chip form with BCB top layer protection. Main Features On wafer typical IFa_Lc measurement ■ Very low 1/f noise ■ High LO/AM noise rejection ■ Low conversion loss ■ IF from DC to 100MHz ■ No DC bias required for mixer ■ On chip temperature sensor embedded ■ ESD strengthened ■ Chip size: 2.95 x 2.00 x 0.10mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit FLO, FRF RF & LO Frequency range 76 77 GHz FIF IF Frequency range DC 100 MHz LcIFa IFa conversion loss 11.0 dB LcIFb IFb conversion loss 7.5 dBm NIF IF port noise power @ IF=100kHz -162 dBm/Hz LO RFa / Tx IFa Rx 76. 5GHz BES IFb RFb Vtemp 90° LO RFa / Tx IFa Rx 76. 5GHz BES IFb RFb Vtemp 90° 74,5 75 75,5 76 76,5 77 77,5 78 78,5 F_lo (GHz) IFa_Lc (dB)

CHM1270a98F W-Band Dual Channel Transmitter/Receiver Ref. : DSCHM1270a2352 - 17 Dec 12 2/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Electrical Characteristics

Tamb.= +25°C Symbol Parameter Min Typ Max Unit FLO, FRF LO and RF frequency range 76 77 GHz FIF IF frequency range DC 100 MHz PLO LO input power 15 dBm PLO/RFa LO output power on RFa port (4) 10 dBm LcIFa IFa conversion loss (2) (4) 11 dB LcIFb IFb conversion loss (2) (4) 7.5 dB PhIFx/RFx IF ports phase shift difference / RF (4) 90 ° P1dBRFa RFa ports input power at 1 dB compression 3.5 dBm P1dBRFb RFb ports input power at 1 dB compression 0 dBm VSWRLO LO port VSWR (50) (1) 2.5:1 VSWRRFx RFx ports VSWR (50) (1) 2.5:1 ZIFx IFx ports load impedance (2) 200  IsoRFa/RFb Isolation between RF channels 25 dB RejAMIFa LO AM noise rejection (SSB) at IFa port @ VSWRRFa<1.3:1 30 dB dB RejAMIFb LO AM noise rejection (SSB) at IFb port@ VSWRRFb<2.5:1 30 dB NIF IF ports noise power @IF=1kHz (3) -150 dBm/Hz IF ports noise power @IF=10kHz (3) -157 dBm/Hz IF ports noise power @IF=100kHz (3) -162 dBm/Hz IF ports noise power @IF=1MHz (3) -166 dBm/Hz DCIF IF ports dc voltage -0.3 +0.3 V VtempV Vtemp port voltage @ +25°C 1.5 V VtempI Vtemp port current (5) 3 mA Top Operating temperature range -40 +85 °C (1) Parameters are given in the following conditions: (See § Recommended assembly plan): - LO port: 50 reference plan before 0.15nH bonding. - RFa & RFb ports: 50 reference plan after 0.15nH bonding. (2) Optimum IF load: 200  for conversion losses or 50  for noise figure (typically 2dB improvement). (3) Measured on 50 IF load. Mixer noise only, too high VSWR RFx may produce additional IF noise due to LO AM noise detection. (4) These specifications are guaranteed for VSWRRFx<2.0:1. Too high VSWRRFa produces LO phase detection that affect mixer self-bias. (5) The current VtempI has to be fixed by an external resistor.

W-Band Dual Channel Transmitter/Receiver CHM1270a98F Ref. : DSCHM1270a2352 - 17 Dec 12 3/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Absolute Maximum Ratings (1) Tamb.= +25°C Symbol Parameter Values Unit PLO LO port input power 18 dBm PRFa RFa ports input power 6 dBm PRFb RFb ports input power 3 dBm VtempI Vtemp port current 6 mA Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +150 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.

CHM1270a98F W-Band Dual Channel Transmitter/Receiver Ref. : DSCHM1270a2352 - 17 Dec 12 4/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Typical Measurements with chip bonded Tamb.= +25°C IFa & IFb Conversion Losses versus LO Frequency PLO = 15dBm / ZIFx = 200Ω / LO, RFa, RFb ports: 50 reference plan after 0.15nH bonding LO Output Power on RFa port versus LO Frequency PLO = 15dBm / ZIFx = 200Ω / LO, RFa, RFb ports: 50 reference plan after 0.15nH bonding IFx Conversion Loss (dB) LO Frequency (GHz) Lc on IFa Lc on IFb LO Output Power on RFa port (dBm) LO Frequency (GHz)

W-Band Dual Channel Transmitter/Receiver CHM1270a98F Ref. : DSCHM1270a2352 - 17 Dec 12 5/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Mechanical data Chip thickness: 100 +/- 10 Chip size: 2950 x 2000 ±35 All dimensions are in micrometers RF Pads (2, 4, 5) = 90 x 110 (BCB opening) IF, DC Pad (1, 6, 3) = 90 x 87 (BCB opening)

CHM1270a98F W-Band Dual Channel Transmitter/Receiver Ref. : DSCHM1270a2352 - 17 Dec 12 6/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended assembly plan This drawing shows an example of assembly. DC power supply is required only when temperature sensor is used. For the RF and LO pads the equivalent wire bonding inductance (diameter=25µm) ha s to be made according to the following recommendation to match 50 Ohms µ-strip line: Recommended circuit bonding table Label Equivalent inductance Wire length (1) Comment LO L_in = 0.15 nH 0.2 mm (2) LO input port RFa L_out = 0.15 nH 0.2 mm (2) RFa input/output port RFb L_out = 0.15 nH 0.2 mm (2) RFb input port (1) This value is the total length including the necessary loop from pad to µ-strip line. (2) For longer wire length or higher inductance, an external compensation is required to match 50 between LO or RF Pins and 0.15nH wire inductance plan. (For example with a matching network on the substrate) Note: Chip backside must be RF grounded. IFa line L_in LO µ-strip line L_out RFa µ-strip line IFb line L_out RFb µ-strip line Vtemp line+V IFa line L_in LO µ-strip line L_out RFa µ-strip line IFb line L_out RFb µ-strip line Vtemp line+V

W-Band Dual Channel Transmitter/Receiver CHM1270a98F Ref. : DSCHM1270a2352 - 17 Dec 12 7/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Notes

CHM1270a98F W-Band Dual Channel Transmitter/Receiver Ref. : DSCHM1270a2352 - 17 Dec 12 8/8 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006. More environmental data are available in the application note AN0019 also available at http://www.ums-gaas.com.

Ordering Information

Chip form: CHM1270a98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in thi s publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.