CHM2179A

CHM2179A UMS | Alldatasheet

Document overview

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Technical content

Ref. : DSCH21790192 - 22-Jun-00 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Mixer GaAs Monolithic Microwave IC

Description

The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. Main Features ■ W-band LO and RF frequency range ■ Low conversion loss ■ IF from DC to 100MHz ■ High LO/RF isolation ■ High LO/AM noise rejection ■ Very low IF noise ■ Low LO input power ■ Small chip size: 1.53 x 1.17 x 0.10 mm RF IF LO -15 -12,5 -10 -7,5 75 75,5 76 76,5 77 77,5 78 LO Frequency (GHz) Conversion loss (dB) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol Parameter Typ Unit F_LO,F_RF LO,RF frequency range 76-77 GHz F_IF IF frequency range DC-100 MHz Lc Conversion loss 7.5 dB I_LO/RF LO/RF isolation 20 dB N_IF IF noise density @ 100kHz -158 dBm/Hz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

Ref. : DSCH21790192 - 22-Jun-00 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical assembly and RF configuration” Symbol Parameter Min Typ Max Unit F_LO,F_RF LO,RF frequency range 76-77 GHz F_IF IF frequency range DC-100 MHz Lc Conversion loss 7.5 9 dB P_LO LO input power 3 5 7 dBm VSWR_LO LO port VSWR (50Ω ) 2:1 VSWR_RF RF port VSWR (50Ω ) 2:1 IF_load IF load impedance 200 Ω I_LO/RF LO/RF isolation 17 22 dB R_AM_LO LO AM noise rejection 27 dB N_IF IF noise density @ 100kHz (1) -158 dBm/Hz Id Supply current (2) 1 mA (1) Measured on 50 Ω IF load impedance. (2) See on chapter “Typical bias and IF configuration” Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Id Supply current 3 mA P_LO Maximum peak input power overdrive at LO port (2) 10 dBm P_RF Maximum peak input power overdrive at RF port (2) 10 dBm Top Operating temperature range -40 to +100 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s

Ref. : DSCH21790192 - 22-Jun-00 3/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Chip Mechanical Data and Pin References 78911 10 Unit = µm External chip size = 1530 x 1170 Chip thickness = 100 +/- 10 HF Pads (2,5) = 68 x 118 DC/IF Pads = 100 x 100 Pin number Pin name Description 1,3,4,6 Ground : should not be bonded. If required, please ask for more information. 2L O LO input 5R F RF input

7 GND Ground (optional)

8 Not Connected

10 C_ext Bias decoupling

11 +V Positive supply voltage

Ref. : DSCH21790192 - 22-Jun-00 4/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Bias and IF Configuration Several external configurations are possible for bias and IF. The objective is to give flexibility for the integration. As this component is mainly dedicated to low IF use, there are several possibilities for interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200 Ω , however depending on the IF amplifier noise characteristic this load can be modified in order to optimise the noise figure. A series capacitor, between IF output and the load is recommended. Due to high sensitivity to electrical discharges a integrated resistance is used and two ports are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the other one is for the supply voltage connection through an external series resistance (+V port). However, in order to keep the compatibility with the CHM2179, only the “C_ext” port can be used. RFLO IF+VC_ext R_bias1 R_load_IF C_IF C_bias Recommended external bias and IFconfiguration RFLO IF+VC_ext R_bias2 R_load_IF C_IF C_bias Other possible configuration (compatible with the previous version) The recommended values for external components are: R_bias1 2.9kΩ for 1mA current consumption (V = 4.5V, typical LO power) R_bias2 R_bias2 = R_bias1 + 1kΩ R_load_IF From 50 to 200Ω Notes:: 1. R_bias = R_bias1 + 1k Ω when “+V” port is used, otherwize R_bias = R_bias2 2. R_bias can be adjusted if necessary; This allows to optimise the performances when some parameters are different from recommended ones (Supply voltage, LO power …). However maximum ratings for the current have to be taken into account. 3. A series capacitor at IF outputs is recommended for DC decoupling.

Ref. : DSCH21790192 - 22-Jun-00 5/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Assembly and RF Configuration In order to use acceptable wire bonding length, compatible with automatic pick and place and wire bonding equipment, an external matching network is proposed on low dielectric constant substrate. L ~ 0.25nH Er ~ 2.2 h = 0.127m m L ~ 0.25nH Er ~ 2.2 h = 0.127m m

50 Ohm

Example of integration using low dielectric constant substrate : Er=2.2, heigh=0.127mm (dimensions are in µm)

Ref. : DSCH21790192 - 22-Jun-00 6/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Ordering Information

Chip form : CHM2179a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S. . Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.