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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Ideal for printed circuit board
- Not ESD Sensitive Mechanical Data S G G
- High surge current capability Case: Molded plastic Single Phase Glass Passivated Silicon Bridge Rectifier
- Types from 50 V up to 400 V VRRM
- Reliable low cost construction utilizing molded plastic technique Mounting position: Any Cd i t i DB101G thru DB104G DB104GDB103G Maximum ratings at Tc = 25 °C, unless otherwise specified Polarity: Polarrity symbols marked on the body
- Small size, simple installation Terminals: Plated terminals, solderable per MIL-STD- 202, Method 208 Parameter Symbol DB101 G DB102G Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol DB101G DB102G Unit Maximum average forward rectified current IO 1.0 1.0 A Peak forward surge current IFSM 30 30 A Maximum instantaneous forward voltage drop 1.1 1.1 500 500 Typical junction capacitance Cj 25 25 pF Typical thermal resistance RΘJC 20 20 °C/W 25 25 20 20 VF 5 μA V Electrical characteristics at Tc = 25 °C, unless otherwise specified 500500 -55 to 150 -55 to 150 Conditions Ta = 25 °C IF = 1.0 A Conditions DB104G 200 140 DB103G -55 to 150 Maximum DC reverse current at rated DC blocking voltage IR Ta = 125 °C 280 400200 1.1 1.1 DB103G Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Ta = 40 °C 1.0 1.0 tp = 8.3 ms, half sine 30 30 -55 to 150 DB104G 400 www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Di i i i h d ( illi t ) DB101G thru DB104G Dimensions in inches and (millimeters) www.genesicsemi.com/silicon-products/bridge-rectifiers/ 3