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Technical content
Features
- High Surge Capability DO-5 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage V RRM V RMS reverse voltage VRMS V DC blocking voltage VDC V Silicon Standard Recovery Diode Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 800 1200 840 12001000800 Conditions S70K (R) S70M (R) S70Q (R) 1000 700560
- Types from 800 V to 1200 V VRRM S70K thru S70QR 2. Reverse polarity (R): Stud is anode. DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W0.65 70 70 70 1250 1250 1250 1200 1.1 1.1 -55 to 150 1000800 S70Q (R) 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 S70K (R) S70M (R) 0.65 0.65 VR = 100 V, Tj = 180 °C 99 A V TC = 25 °C, tp = 8.3 ms TC ≤ 140 °C Conditions VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C Reverse current IR VF Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S70K thru S70QR DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3