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- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability DO-5 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage V RRM V RMS reverse voltage VRMS V DC blocking voltage VDC V
- Types from 1400 V to 1600 V VRRM S70V thru S70YR Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Silicon Standard Recovery Diode Conditions 2. Reverse polarity (R): Stud is anode. 1600 1130 1600 S70Y (R)S70V (R) 1400 990 1400 DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W VR = 100 V, Tj = 150 °C V 4.5 4.5 0.65 0.65 VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C TC ≤ 110 °C Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 25 °C, tp = 8.3 msSurge non-repetitive forward current, Half Sine Wave IF,SM -55 to 150 IR VF Reverse current 1600 1250 -55 to 150 S70V (R) S70Y (R) 1.1 1.1 -55 to 150 -55 to 150 A 1400 1250 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S70V thru S70YR DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3