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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S70B (R) S70D (R) Unit Repetitive peak reverse voltage VRRM 100 200 V RMS reverse voltage VRMS 70 140 V DC blocking voltage VDC 100 200 V 2. Reverse polarity (R): Stud is anode. S70B thru S70JR S70J (R) 400 280 S70G (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
- Types from 100 V to 600 V VRRM Silicon Standard Recovery Diode Conditions 600 420 600400 DC blocking voltage VDC 100 200 V Continuous forward current IF 70 70 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol S70B (R) S70D (R) Unit Diode forward voltage 1.1 1.1 10 10 μA 15 15 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.65 0.65 °C/W A1250 Reverse current IR VF 1250 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C TC ≤ 140 °C Conditions 1250 1250 -55 to 150 -55 to 150 S70J (R) 10 10 S70G (R) 0.65 VR = 100 V, Tj = 180 °C 0.65 1.1 1.1 -55 to 150 -55 to 150 TC = 25 °C, tp = 8.3 ms 600400 Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S70B thru S70JR DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3