DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V 100% Avalanche Tested Thermal Resistance Characteristics
FEATURES
Absolute Maximum Ratings TC=25℃ unless otherwise specified HFD5N40 / HFU5N40 400V N-Channel MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 400 V ID Drain Current – Continuous (TC = 25℃) 3.4 A Drain Current – Continuous (TC = 100℃) 2.15 A IDM Drain Current – Pulsed (Note 1) 13.6 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 510 mJ IAR Avalanche Current (Note 1) 3.4 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25℃) 2.5 W Power Dissipation (TC = 25℃) - Derate above 25℃ 45 W
0.36 W/℃
TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 2.78 ℃/WRθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 July 2005 D-PAK 1.Gate 2. Drain 3. Source I-PAK HFD5N40 HFU5N40 * When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=44mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤3.4A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Electrical Characteristics TC=25 °C unless otherwise specified IS Continuous Source-Drain Diode Forward Current -- -- 3.4 A ISM Pulsed Source-Drain Diode Forward Current -- -- 13.6 VSD Source-Drain Diode Forward Voltage IS = 3.4 A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 190 -- ㎱ Qrr Reverse Recovery Charge -- 1.0 -- μC Symbol Parameter Test Conditions Min Typ Max Units VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.5 -- 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.7 A -- 1.27 1.6 Ω On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 400 -- -- V ΔBVDSS /ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 ㎂, Referenced to25℃ -- 0.38 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 ㎂ IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 450 590 ㎊ Coss Output Capacitance -- 70 90 ㎊ Crss Reverse Transfer Capacitance -- 10 17 ㎊ Dynamic Characteristics td(on) Turn-On Time VDS = 200 V, ID = 4.5 A, RG = 25 Ω (Note 4,5) -- 15 30 ㎱ tr Turn-On Rise Time -- 70 140 ㎱ td(off) Turn-Off Delay Time -- 30 60 ㎱ tf Turn-Off Fall Time -- 40 80 ㎱ Qg Total Gate Charge VDS = 320 V, ID = 4.5 A, VGS = 10 V (Note 4,5) -- 13 17 nC Qgs Gate-Source Charge -- 4.0 -- nC Qgd Gate-Drain Charge -- 6.0 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics
◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF12V Same Type as DUT 10V DUT RG L I D
◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS •dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 Package Dimension 5.35±0.15 6.6±0.2 5.6±0.2 0.6±0.2 0.8±0.2 2.3typ 2.3typ 2.7±0.3 9.7+0.5 -0.3 0.05+0.1 -0.05 0.5+0.1 -0.05 0.5±0.05 2.3±0.1 1.2±0.3 1.2±0.3 1±0.2 TO-252
◎ SEMIHOW REV.A0,July 2005 HFD5N40 / HFU5N40 5.35±0.15 6.6±0.2 0.75±0.15 2.3typ 2.3typ 5.6±0.2 7±0.27.5±0.3 0.6±0.1 2.3±0.1 0.5±0.05 1.2±0.3 0.5+0.1 -0.05 0.8±0.15 TO-251